# IPB180P04P403ATMA2

**Tokmas** · MOSFETs · TO-263-7L

IPB180P04P403ATMA2 from Tokmas, in a TO-263-7L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET; gate-source voltage is limited to ±20 V. |
| 2 | Source | passive | Source terminal of the MOSFET, one of five pins tied together as Source on the PG-TO263-7-3 package. |
| 3 | Source | passive | Source terminal of the MOSFET, one of five pins tied together as Source on the PG-TO263-7-3 package. |
| 4 | Drain | passive | Drain terminal on the metal tab; continuous drain current is -180 A at T C=25°C with V GS=-10V and drain-source voltage is -40 V. |
| 5 | Source | passive | Source terminal of the MOSFET, one of five pins tied together as Source on the PG-TO263-7-3 package. |
| 6 | Source | passive | Source terminal of the MOSFET, one of five pins tied together as Source on the PG-TO263-7-3 package. |
| 7 | Source | passive | Source terminal of the MOSFET, one of five pins tied together as Source on the PG-TO263-7-3 package. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Tokmas |
| Package | TO-263-7L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 7 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current (TC=25°C) | ID |  |  | -180 | A | TC=25°C, VGS=-10V | 1 |
| Continuous drain current (TC=100°C) | ID |  |  | -131 | A | TC=100°C, VGS=-10V | 1 |
| Pulsed drain current | ID,pulse |  |  | -720 | A | TC=25°C | 1 |
| Avalanche energy, single pulse | EAS |  |  | 90 | mJ | ID=-90A | 1 |
| Avalanche current, single pulse | IAS |  |  | -180 | A |  | 1 |
| Gate source voltage | VGS | -20 |  | 20 | V |  | 1 |
| Power dissipation | Ptot |  |  | 150 | W | TC=25 °C | 1 |
| Operating and storage temperature | Tj, Tstg | -55 |  | 175 | °C |  | 1 |
| Thermal resistance, junction - case | RthJC |  |  | 1 | K/W |  | 2 |
| Thermal resistance, junction - ambient, leaded | RthJA |  |  | 62 | K/W |  | 2 |
| Thermal resistance, junction - ambient, SMD version, device on PCB | RthJA |  |  | 62 | K/W | minimal footprint | 2 |
| Thermal resistance, junction - ambient, SMD version, device on PCB | RthJA |  |  | 40 | K/W | 6 cm2 cooling area (footnote 3 PCB) | 2 |
| Drain-source breakdown voltage | V(BR)DSS | -40 |  |  | V | VGS=0V, ID=-1mA | 2 |
| Gate threshold voltage | VGS(th) | -2 | -3 | -4 | V | VDS=VGS, ID=-410µA | 2 |
| Zero gate voltage drain current | IDSS |  | -0.1 | -1 | µA | VDS=-32V, VGS=0V, Tj=25°C | 2 |
| Zero gate voltage drain current | IDSS |  | -20 | -200 | µA | VDS=-32V, VGS=0V, Tj=125°C | 2 |
| Gate-source leakage current | IGSS |  |  | -100 | nA | VGS=-20V, VDS=0V | 2 |
| Drain-source on-state resistance | RDS(on) |  | 2 | 2.8 | mW | VGS=-10V, ID=-100A | 2 |
| Input capacitance | Ciss |  | 13570 | 17640 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 |
| Output capacitance | Coss |  | 4070 | 5290 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 |
| Reverse transfer capacitance | Crss |  | 110 | 220 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 |
| Gate to source charge | Qgs |  | 70 | 95 | nC | VDD=-32V, ID=-180A, VGS=0 to -10V | 3 |
| Gate to drain charge | Qgd |  | 35 | 70 | nC | VDD=-32V, ID=-180A, VGS=0 to -10V | 3 |
| Gate charge total | Qg |  | 190 | 250 | nC | VDD=-32V, ID=-180A, VGS=0 to -10V | 3 |
| Diode continuous forward current | IS |  |  | -180 | A |  | 3 |
| Diode pulse current | IS,pulse |  |  | -720 | A |  | 3 |
| Diode forward voltage | VSD |  | -1 | -1.3 | V | VGS=0V, IF=-100A, Tj=25°C | 3 |
| Turn-on delay time | td(on) |  | 48 |  | ns | VDD=-20V, VGS=-10V, ID=-180A, RG=3.5W | 3 |
| Rise time | tr |  | 31 |  | ns | VDD=-20V, VGS=-10V, ID=-180A, RG=3.5W | 3 |
| Turn-off delay time | td(off) |  | 72 |  | ns | VDD=-20V, VGS=-10V, ID=-180A, RG=3.5W | 3 |
| Fall time | tf |  | 81 |  | ns | VDD=-20V, VGS=-10V, ID=-180A, RG=3.5W | 3 |
| Gate plateau voltage | Vplateau |  | -5.2 |  | V | VDD=-32V, ID=-180A, VGS=0 to -10V | 3 |
| Reverse recovery time | trr |  | 83 |  | ns | VR=-20V, IF=-50A, diF/dt=-100A/µs | 3 |
| Reverse recovery charge | Qrr |  | 131 |  | nC | VR=-20V, IF=-50A, diF/dt=-100A/µs | 3 |

## CAD (KiCad official)

- Symbol: `IPB180P04P403ATMA2`
- Footprint: `Package_TO_SOT_SMD:TO-263-7_TabPin4`
- 3D model: TO-263-7L (KiCad packages3D, STEP)
- 3D model files: `ipb180p04p403atma2-etched.step` / `ipb180p04p403atma2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipb180p04p403atma2.step` / `ipb180p04p403atma2.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Tokmas datasheet](https://www.infineon.com/dgdl/Infineon-IPB180P04P4-03-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f78472a2a2e4e) (9 pp, sha256 `3b7e4158d04f6478`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ipb180p04p403atma2-datasheet.pdf)