component
IPB180P04P403ATMA2
Public Made by Adomby adom
Tokmas MOSFETs, TO-263-7L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPB180P04P403ATMA2
Tokmas · MOSFETs · TO-263-7L
IPB180P04P403ATMA2 from Tokmas, in a TO-263-7L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET; gate-source voltage is limited to ±20 V. |
| 2 | Source | passive | Source terminal of the MOSFET, one of five pins tied together as Source on the PG-TO263-7-3 package. |
| 3 | Source | passive | Source terminal of the MOSFET, one of five pins tied together as Source on the PG-TO263-7-3 package. |
| 4 | Drain | passive | Drain terminal on the metal tab; continuous drain current is -180 A at T C=25°C with V GS=-10V and drain-source voltage is -40 V. |
| 5 | Source | passive | Source terminal of the MOSFET, one of five pins tied together as Source on the PG-TO263-7-3 package. |
| 6 | Source | passive | Source terminal of the MOSFET, one of five pins tied together as Source on the PG-TO263-7-3 package. |
| 7 | Source | passive | Source terminal of the MOSFET, one of five pins tied together as Source on the PG-TO263-7-3 package. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tokmas |
| Package | TO-263-7L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 7 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current (TC=25°C) | ID | -180 | A | TC=25°C, VGS=-10V | 1 | ||
| Continuous drain current (TC=100°C) | ID | -131 | A | TC=100°C, VGS=-10V | 1 | ||
| Pulsed drain current | ID,pulse | -720 | A | TC=25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 90 | mJ | ID=-90A | 1 | ||
| Avalanche current, single pulse | IAS | -180 | A | 1 | |||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 150 | W | TC=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Thermal resistance, junction - case | RthJC | 1 | K/W | 2 | |||
| Thermal resistance, junction - ambient, leaded | RthJA | 62 | K/W | 2 | |||
| Thermal resistance, junction - ambient, SMD version, device on PCB | RthJA | 62 | K/W | minimal footprint | 2 | ||
| Thermal resistance, junction - ambient, SMD version, device on PCB | RthJA | 40 | K/W | 6 cm2 cooling area (footnote 3 PCB) | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | -40 | V | VGS=0V, ID=-1mA | 2 | ||
| Gate threshold voltage | VGS(th) | -2 | -3 | -4 | V | VDS=VGS, ID=-410µA | 2 |
| Zero gate voltage drain current | IDSS | -0.1 | -1 | µA | VDS=-32V, VGS=0V, Tj=25°C | 2 | |
| Zero gate voltage drain current | IDSS | -20 | -200 | µA | VDS=-32V, VGS=0V, Tj=125°C | 2 | |
| Gate-source leakage current | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 2 | 2.8 | mW | VGS=-10V, ID=-100A | 2 | |
| Input capacitance | Ciss | 13570 | 17640 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 | |
| Output capacitance | Coss | 4070 | 5290 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 | |
| Reverse transfer capacitance | Crss | 110 | 220 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 | |
| Gate to source charge | Qgs | 70 | 95 | nC | VDD=-32V, ID=-180A, VGS=0 to -10V | 3 | |
| Gate to drain charge | Qgd | 35 | 70 | nC | VDD=-32V, ID=-180A, VGS=0 to -10V | 3 | |
| Gate charge total | Qg | 190 | 250 | nC | VDD=-32V, ID=-180A, VGS=0 to -10V | 3 | |
| Diode continuous forward current | IS | -180 | A | 3 | |||
| Diode pulse current | IS,pulse | -720 | A | 3 | |||
| Diode forward voltage | VSD | -1 | -1.3 | V | VGS=0V, IF=-100A, Tj=25°C | 3 | |
| Turn-on delay time | td(on) | 48 | ns | VDD=-20V, VGS=-10V, ID=-180A, RG=3.5W | 3 | ||
| Rise time | tr | 31 | ns | VDD=-20V, VGS=-10V, ID=-180A, RG=3.5W | 3 | ||
| Turn-off delay time | td(off) | 72 | ns | VDD=-20V, VGS=-10V, ID=-180A, RG=3.5W | 3 | ||
| Fall time | tf | 81 | ns | VDD=-20V, VGS=-10V, ID=-180A, RG=3.5W | 3 | ||
| Gate plateau voltage | Vplateau | -5.2 | V | VDD=-32V, ID=-180A, VGS=0 to -10V | 3 | ||
| Reverse recovery time | trr | 83 | ns | VR=-20V, IF=-50A, diF/dt=-100A/µs | 3 | ||
| Reverse recovery charge | Qrr | 131 | nC | VR=-20V, IF=-50A, diF/dt=-100A/µs | 3 |
CAD (KiCad official)
- Symbol:
IPB180P04P403ATMA2 - Footprint:
Package_TO_SOT_SMD:TO-263-7_TabPin4 - 3D model: TO-263-7L (KiCad packages3D, STEP)
- 3D model files:
ipb180p04p403atma2-etched.step/ipb180p04p403atma2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipb180p04p403atma2.step/ipb180p04p403atma2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tokmas datasheet (9 pp, sha256
3b7e4158d04f6478, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).