component
IPB160N04S4-H1
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Infineon Technologies MOSFETs, TO-263-7. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IPB160N04S4-H1
Infineon Technologies · MOSFETs · TO-263-7
IPB160N04S4-H1 from Infineon Technologies, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with a maximum gate-source voltage of ±20 V and a threshold of 2.0 to 4.0 V at 110 µA. |
| 2 | S | passive | Source, connected in parallel with pins 3, 5, 6 and 7 for the 160 A continuous drain current. |
| 3 | S | passive | Source, connected in parallel with pins 2, 5, 6 and 7 for the 160 A continuous drain current. |
| 4 | D | passive | Drain (pin 4 and the tab are the same drain node), rated 40 V drain-source breakdown voltage minimum and 160 A continuous. |
| 5 | S | passive | Source, connected in parallel with pins 2, 3, 6 and 7 for the 160 A continuous drain current. |
| 6 | S | passive | Source, connected in parallel with pins 2, 3, 5 and 7 for the 160 A continuous drain current. |
| 7 | S | passive | Source, connected in parallel with pins 2, 3, 5 and 6 for the 160 A continuous drain current. |
| 8 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-263-7 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 40 | V | VGS=0 V, ID=1 mA | 2 | ||
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=110 µA | 2 |
| Zero gate voltage drain current | IDSS | 0.05 | 1 | µA | VDS=40 V, VGS=0 V, Tj=25°C | 2 | |
| Zero gate voltage drain current | IDSS | 1 | 20 | µA | VDS=18 V, VGS=0 V, Tj=85°C | 2 | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=20 V, VDS=0 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 1.4 | 1.6 | mΩ | VGS=10 V, ID=100 A | 2 | |
| Input capacitance | Ciss | 8400 | 10920 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | |
| Output capacitance | Coss | 1800 | 2700 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | |
| Reverse transfer capacitance | Crss | 60 | 138 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | |
| Gate to source charge | Qgs | 44 | 57 | nC | VDD=32 V, ID=160 A, VGS=0 to 10 V | 3 | |
| Gate to drain charge | Qgd | 14 | 32 | nC | VDD=32 V, ID=160 A, VGS=0 to 10 V | 3 | |
| Gate charge total | Qg | 105 | 137 | nC | VDD=32 V, ID=160 A, VGS=0 to 10 V | 3 | |
| Diode continuous forward current | IS | 160 | A | 3 | |||
| Diode pulse current | IS,pulse | 640 | A | 3 | |||
| Diode forward voltage | VSD | 0.9 | 1.3 | V | VGS=0 V, IF=100 A, Tj=25°C | 3 | |
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current | ID | 160 | A | TC=25°C, VGS=10 V | 1 | ||
| Pulsed drain current | ID,pulse | 640 | A | TC=25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 400 | mJ | ID=80 A | 1 | ||
| Avalanche current, single pulse | IAS | 160 | A | 1 | |||
| Power dissipation | Ptot | 167 | W | TC=25°C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Thermal resistance, junction-case | RthJC | 0.9 | K/W | 2 | |||
| Thermal resistance, junction-ambient, SMD on PCB | RthJA | 62 | K/W | minimal footprint | 2 | ||
| Thermal resistance, junction-ambient, SMD on PCB | RthJA | 40 | K/W | 6 cm2 cooling area | 2 |
CAD (KiCad official)
- Symbol:
IPB160N04S4-H1 - Footprint:
Package_TO_SOT_SMD:TO-263-7_TabPin8 - 3D model: TO-263-7 (KiCad packages3D, STEP)
- 3D model files:
ipb160n04s4-h1-etched.step/ipb160n04s4-h1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipb160n04s4-h1.step/ipb160n04s4-h1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
8612267fcc484cbb, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IPB160N04S4-H1
**Infineon Technologies** · MOSFETs · TO-263-7
IPB160N04S4-H1 from Infineon Technologies, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with a maximum gate-source voltage of ±20 V and a threshold of 2.0 to 4.0 V at 110 µA. |
| 2 | S | passive | Source, connected in parallel with pins 3, 5, 6 and 7 for the 160 A continuous drain current. |
| 3 | S | passive | Source, connected in parallel with pins 2, 5, 6 and 7 for the 160 A continuous drain current. |
| 4 | D | passive | Drain (pin 4 and the tab are the same drain node), rated 40 V drain-source breakdown voltage minimum and 160 A continuous. |
| 5 | S | passive | Source, connected in parallel with pins 2, 3, 6 and 7 for the 160 A continuous drain current. |
| 6 | S | passive | Source, connected in parallel with pins 2, 3, 5 and 7 for the 160 A continuous drain current. |
| 7 | S | passive | Source, connected in parallel with pins 2, 3, 5 and 6 for the 160 A continuous drain current. |
| 8 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-263-7 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 40 | | | V | VGS=0 V, ID=1 mA | 2 |
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=110 µA | 2 |
| Zero gate voltage drain current | IDSS | | 0.05 | 1 | µA | VDS=40 V, VGS=0 V, Tj=25°C | 2 |
| Zero gate voltage drain current | IDSS | | 1 | 20 | µA | VDS=18 V, VGS=0 V, Tj=85°C | 2 |
| Gate-source leakage current | IGSS | | | 100 | nA | VGS=20 V, VDS=0 V | 2 |
| Drain-source on-state resistance | RDS(on) | | 1.4 | 1.6 | mΩ | VGS=10 V, ID=100 A | 2 |
| Input capacitance | Ciss | | 8400 | 10920 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 |
| Output capacitance | Coss | | 1800 | 2700 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 |
| Reverse transfer capacitance | Crss | | 60 | 138 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 |
| Gate to source charge | Qgs | | 44 | 57 | nC | VDD=32 V, ID=160 A, VGS=0 to 10 V | 3 |
| Gate to drain charge | Qgd | | 14 | 32 | nC | VDD=32 V, ID=160 A, VGS=0 to 10 V | 3 |
| Gate charge total | Qg | | 105 | 137 | nC | VDD=32 V, ID=160 A, VGS=0 to 10 V | 3 |
| Diode continuous forward current | IS | | | 160 | A | | 3 |
| Diode pulse current | IS,pulse | | | 640 | A | | 3 |
| Diode forward voltage | VSD | | 0.9 | 1.3 | V | VGS=0 V, IF=100 A, Tj=25°C | 3 |
| Gate source voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous drain current | ID | | | 160 | A | TC=25°C, VGS=10 V | 1 |
| Pulsed drain current | ID,pulse | | | 640 | A | TC=25°C | 1 |
| Avalanche energy, single pulse | EAS | | | 400 | mJ | ID=80 A | 1 |
| Avalanche current, single pulse | IAS | | | 160 | A | | 1 |
| Power dissipation | Ptot | | | 167 | W | TC=25°C | 1 |
| Operating and storage temperature | Tj, Tstg | -55 | | 175 | °C | | 1 |
| Thermal resistance, junction-case | RthJC | | | 0.9 | K/W | | 2 |
| Thermal resistance, junction-ambient, SMD on PCB | RthJA | | | 62 | K/W | minimal footprint | 2 |
| Thermal resistance, junction-ambient, SMD on PCB | RthJA | | | 40 | K/W | 6 cm2 cooling area | 2 |
## CAD (KiCad official)
- Symbol: `IPB160N04S4-H1`
- Footprint: `Package_TO_SOT_SMD:TO-263-7_TabPin8`
- 3D model: TO-263-7 (KiCad packages3D, STEP)
- 3D model files: `ipb160n04s4-h1-etched.step` / `ipb160n04s4-h1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipb160n04s4-h1.step` / `ipb160n04s4-h1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588912627912724480) (9 pp, sha256 `8612267fcc484cbb`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ipb160n04s4-h1-datasheet.pdf)