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IPB160N04S4-H1

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Infineon Technologies MOSFETs, TO-263-7. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPB160N04S4-H1

Infineon Technologies · MOSFETs · TO-263-7

IPB160N04S4-H1 from Infineon Technologies, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel with a maximum gate-source voltage of ±20 V and a threshold of 2.0 to 4.0 V at 110 µA.
2 S passive Source, connected in parallel with pins 3, 5, 6 and 7 for the 160 A continuous drain current.
3 S passive Source, connected in parallel with pins 2, 5, 6 and 7 for the 160 A continuous drain current.
4 D passive Drain (pin 4 and the tab are the same drain node), rated 40 V drain-source breakdown voltage minimum and 160 A continuous.
5 S passive Source, connected in parallel with pins 2, 3, 6 and 7 for the 160 A continuous drain current.
6 S passive Source, connected in parallel with pins 2, 3, 5 and 7 for the 160 A continuous drain current.
7 S passive Source, connected in parallel with pins 2, 3, 5 and 6 for the 160 A continuous drain current.
8 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-263-7
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 40 V VGS=0 V, ID=1 mA 2
Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS, ID=110 µA 2
Zero gate voltage drain current IDSS 0.05 1 µA VDS=40 V, VGS=0 V, Tj=25°C 2
Zero gate voltage drain current IDSS 1 20 µA VDS=18 V, VGS=0 V, Tj=85°C 2
Gate-source leakage current IGSS 100 nA VGS=20 V, VDS=0 V 2
Drain-source on-state resistance RDS(on) 1.4 1.6 mΩ VGS=10 V, ID=100 A 2
Input capacitance Ciss 8400 10920 pF VGS=0 V, VDS=25 V, f=1 MHz 3
Output capacitance Coss 1800 2700 pF VGS=0 V, VDS=25 V, f=1 MHz 3
Reverse transfer capacitance Crss 60 138 pF VGS=0 V, VDS=25 V, f=1 MHz 3
Gate to source charge Qgs 44 57 nC VDD=32 V, ID=160 A, VGS=0 to 10 V 3
Gate to drain charge Qgd 14 32 nC VDD=32 V, ID=160 A, VGS=0 to 10 V 3
Gate charge total Qg 105 137 nC VDD=32 V, ID=160 A, VGS=0 to 10 V 3
Diode continuous forward current IS 160 A 3
Diode pulse current IS,pulse 640 A 3
Diode forward voltage VSD 0.9 1.3 V VGS=0 V, IF=100 A, Tj=25°C 3
Gate source voltage VGS -20 20 V 1
Continuous drain current ID 160 A TC=25°C, VGS=10 V 1
Pulsed drain current ID,pulse 640 A TC=25°C 1
Avalanche energy, single pulse EAS 400 mJ ID=80 A 1
Avalanche current, single pulse IAS 160 A 1
Power dissipation Ptot 167 W TC=25°C 1
Operating and storage temperature Tj, Tstg -55 175 °C 1
Thermal resistance, junction-case RthJC 0.9 K/W 2
Thermal resistance, junction-ambient, SMD on PCB RthJA 62 K/W minimal footprint 2
Thermal resistance, junction-ambient, SMD on PCB RthJA 40 K/W 6 cm2 cooling area 2

CAD (KiCad official)

  • Symbol: IPB160N04S4-H1
  • Footprint: Package_TO_SOT_SMD:TO-263-7_TabPin8
  • 3D model: TO-263-7 (KiCad packages3D, STEP)
  • 3D model files: ipb160n04s4-h1-etched.step / ipb160n04s4-h1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipb160n04s4-h1.step / ipb160n04s4-h1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 8612267fcc484cbb, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF