# IPA50R500CE

**Infineon Technologies** · MOSFETs · TO-220F

IPA50R500CE from Infineon Technologies, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; the maximum ratings allow a static VGS of -20 V to 20 V and AC (f>1 Hz) of -30 V to 30 V. |
| 2 | Drain | passive | Drain terminal of the 500 V CoolMOS CE MOSFET, rated VDS at Tj,max of 550 V and continuous drain current ID of 11.1 A at TC=25°C. |
| 3 | Source | passive | Source terminal of the MOSFET; the datasheet gives no separate pin rating, and the continuous diode forward current IS is 4.6 A at TC=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220F |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 500 |  |  | V | VGS=0V,ID=1mA | 4 |
| Gate threshold voltage | V(GS)th | 2.5 | 3 | 3.5 | V | VDS=VGS,ID=0.2mA | 4 |
| Gate-source leakage current | IGSS |  |  | 100 | nA | VGS=20V,VDS=0V | 4 |
| Zero gate voltage drain current at Tj=25°C | IDSS |  |  | 10 | µA | VDS=500V,VGS=0V,Tj=25°C | 4 |
| Zero gate voltage drain current at Tj=150°C | IDSS |  | 1 |  | µA | VDS=500V,VGS=0V,Tj=150°C | 4 |
| Continuous drain current at TC=25°C | ID |  |  | 11.1 | A | TC = 25°C | 3 |
| Continuous drain current at TC=100°C | ID |  |  | 7 | A | TC = 100°C | 3 |
| Pulsed drain current | ID,pulse |  |  | 24 | A | TC=25°C | 3 |
| Avalanche energy, single pulse | EAS |  |  | 129 | mJ | ID =2.9A; VDD = 50V | 3 |
| Avalanche energy, repetitive | EAR |  |  | 0.2 | mJ | ID =2.9A; VDD = 50V | 3 |
| Avalanche current, repetitive | IAR |  |  | 2.9 | A |  | 3 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 50 | V/ns | VDS=0...400V | 3 |
| Gate source voltage, static | VGS | -20 |  | 20 | V | static | 3 |
| Gate source voltage, AC | VGS | -30 |  | 30 | V | AC (f>1 Hz) | 3 |
| Power dissipation (Full PAK) | Ptot |  |  | 28 | W | TC=25°C | 3 |
| Operating and storage temperature | Tj,Tstg | -40 |  | 150 | °C |  | 3 |
| Mounting torque |  |  |  | 50 | Ncm | M2.5 screws | 3 |
| Continuous diode forward current | IS |  |  | 4.6 | A | TC=25°C | 3 |
| Diode pulse current | IS,pulse |  |  | 24 | A | TC = 25°C | 3 |
| Reverse diode dv/dt | dv/dt |  |  | 15 | V/ns | VDS=0...400V,ISD<=IS,Tj=25°C | 3 |
| Maximum diode commutation speed | dif/dt |  |  | 500 | A/µs | VDS=0...400V,ISD<=IS,Tj=25°C | 3 |
| Insulation withstand voltage for TO-220 FullPAK | VISO |  |  | 2500 | V | Vrms,TC=25°C,t=1min | 3 |
| Thermal resistance, junction - case | RthJC |  |  | 4.46 | °C/W |  | 3 |
| Thermal resistance, junction - ambient | RthJA |  |  | 80 | °C/W | leaded | 3 |
| Soldering temperature, wavesoldering | Tsold |  |  | 260 | °C | 1.6mm (0.063 in.) from case for 10s | 3 |
| Drain-source on-state resistance at Tj=25°C | RDS(on) |  | 0.45 | 0.5 | Ω | VGS=13V,ID=2.3A,Tj=25°C | 4 |
| Drain-source on-state resistance at Tj=150°C | RDS(on) |  | 1.17 |  | Ω | VGS=13V,ID=2.3A,Tj=150°C | 4 |
| Gate resistance | RG |  | 3 |  | Ω | f=1MHz, open drain | 4 |
| Input capacitance | Ciss |  | 433 |  | pF | VGS=0V,VDS=100V,f=1MHz | 4 |
| Output capacitance | Coss |  | 31 |  | pF | VGS=0V,VDS=100V,f=1MHz | 4 |
| Effective output capacitance, energy related | Co(er) |  | 25 |  | pF | VGS=0V,VDS=0...400V | 4 |
| Effective output capacitance, time related | Co(tr) |  | 100 |  | pF | ID=constant,VGS=0V,VDS=0...400V | 4 |
| Turn-on delay time | td(on) |  | 6 |  | ns | VDD=400V,VGS=13V,ID=2.9A,RG=3.4Ω | 4 |
| Rise time | tr |  | 5 |  | ns | VDD=400V,VGS=13V,ID=2.9A,RG=3.4Ω | 4 |
| Turn-off delay time | td(off) |  | 30 |  | ns | VDD=400V,VGS=13V,ID=2.9A,RG=3.4Ω | 4 |
| Fall time | tf |  | 12 |  | ns | VDD=400V,VGS=13V,ID=2.9A,RG=3.4Ω | 4 |
| Gate to source charge | Qgs |  | 2.3 |  | nC | VDD=400V,ID=2.9A,VGS=0 to 10V | 4 |
| Gate to drain charge | Qgd |  | 10 |  | nC | VDD=400V,ID=2.9A,VGS=0 to 10V | 4 |
| Gate charge total | Qg |  | 18.7 |  | nC | VDD=400V,ID=2.9A,VGS=0 to 10V | 4 |
| Gate plateau voltage | Vplateau |  | 5.3 |  | V | VDD=400V,ID=2.9A,VGS=0 to 10V | 4 |
| Diode forward voltage | VSD |  | 0.85 |  | V | VGS=0V,IF=2.9A,Tj=25°C | 5 |
| Reverse recovery time | trr |  | 180 |  | ns | VR=400V,IF=2.9A,diF/dt=100A/µs | 5 |
| Reverse recovery charge | Qrr |  | 1.2 |  | µC | VR=400V,IF=2.9A,diF/dt=100A/µs | 5 |
| Peak reverse recovery current | Irrm |  | 12 |  | A | VR=400V,IF=2.9A,diF/dt=100A/µs | 5 |

## CAD (KiCad official)

- Symbol: `IPA50R500CE`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](docs/ipa50r500ce-datasheet.pdf) (13 pp, sha256 `12ed0ffd9110755c`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ipa50r500ce-datasheet.pdf)