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IPA50R500CE

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Infineon Technologies MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPA50R500CE

Infineon Technologies · MOSFETs · TO-220F

IPA50R500CE from Infineon Technologies, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; the maximum ratings allow a static VGS of -20 V to 20 V and AC (f>1 Hz) of -30 V to 30 V.
2 Drain passive Drain terminal of the 500 V CoolMOS CE MOSFET, rated VDS at Tj,max of 550 V and continuous drain current ID of 11.1 A at TC=25°C.
3 Source passive Source terminal of the MOSFET; the datasheet gives no separate pin rating, and the continuous diode forward current IS is 4.6 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220F
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 500 V VGS=0V,ID=1mA 4
Gate threshold voltage V(GS)th 2.5 3 3.5 V VDS=VGS,ID=0.2mA 4
Gate-source leakage current IGSS 100 nA VGS=20V,VDS=0V 4
Zero gate voltage drain current at Tj=25°C IDSS 10 µA VDS=500V,VGS=0V,Tj=25°C 4
Zero gate voltage drain current at Tj=150°C IDSS 1 µA VDS=500V,VGS=0V,Tj=150°C 4
Continuous drain current at TC=25°C ID 11.1 A TC = 25°C 3
Continuous drain current at TC=100°C ID 7 A TC = 100°C 3
Pulsed drain current ID,pulse 24 A TC=25°C 3
Avalanche energy, single pulse EAS 129 mJ ID =2.9A; VDD = 50V 3
Avalanche energy, repetitive EAR 0.2 mJ ID =2.9A; VDD = 50V 3
Avalanche current, repetitive IAR 2.9 A 3
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...400V 3
Gate source voltage, static VGS -20 20 V static 3
Gate source voltage, AC VGS -30 30 V AC (f>1 Hz) 3
Power dissipation (Full PAK) Ptot 28 W TC=25°C 3
Operating and storage temperature Tj,Tstg -40 150 °C 3
Mounting torque 50 Ncm M2.5 screws 3
Continuous diode forward current IS 4.6 A TC=25°C 3
Diode pulse current IS,pulse 24 A TC = 25°C 3
Reverse diode dv/dt dv/dt 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C 3
Maximum diode commutation speed dif/dt 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C 3
Insulation withstand voltage for TO-220 FullPAK VISO 2500 V Vrms,TC=25°C,t=1min 3
Thermal resistance, junction - case RthJC 4.46 °C/W 3
Thermal resistance, junction - ambient RthJA 80 °C/W leaded 3
Soldering temperature, wavesoldering Tsold 260 °C 1.6mm (0.063 in.) from case for 10s 3
Drain-source on-state resistance at Tj=25°C RDS(on) 0.45 0.5 Ω VGS=13V,ID=2.3A,Tj=25°C 4
Drain-source on-state resistance at Tj=150°C RDS(on) 1.17 Ω VGS=13V,ID=2.3A,Tj=150°C 4
Gate resistance RG 3 Ω f=1MHz, open drain 4
Input capacitance Ciss 433 pF VGS=0V,VDS=100V,f=1MHz 4
Output capacitance Coss 31 pF VGS=0V,VDS=100V,f=1MHz 4
Effective output capacitance, energy related Co(er) 25 pF VGS=0V,VDS=0...400V 4
Effective output capacitance, time related Co(tr) 100 pF ID=constant,VGS=0V,VDS=0...400V 4
Turn-on delay time td(on) 6 ns VDD=400V,VGS=13V,ID=2.9A,RG=3.4Ω 4
Rise time tr 5 ns VDD=400V,VGS=13V,ID=2.9A,RG=3.4Ω 4
Turn-off delay time td(off) 30 ns VDD=400V,VGS=13V,ID=2.9A,RG=3.4Ω 4
Fall time tf 12 ns VDD=400V,VGS=13V,ID=2.9A,RG=3.4Ω 4
Gate to source charge Qgs 2.3 nC VDD=400V,ID=2.9A,VGS=0 to 10V 4
Gate to drain charge Qgd 10 nC VDD=400V,ID=2.9A,VGS=0 to 10V 4
Gate charge total Qg 18.7 nC VDD=400V,ID=2.9A,VGS=0 to 10V 4
Gate plateau voltage Vplateau 5.3 V VDD=400V,ID=2.9A,VGS=0 to 10V 4
Diode forward voltage VSD 0.85 V VGS=0V,IF=2.9A,Tj=25°C 5
Reverse recovery time trr 180 ns VR=400V,IF=2.9A,diF/dt=100A/µs 5
Reverse recovery charge Qrr 1.2 µC VR=400V,IF=2.9A,diF/dt=100A/µs 5
Peak reverse recovery current Irrm 12 A VR=400V,IF=2.9A,diF/dt=100A/µs 5

CAD (KiCad official)

  • Symbol: IPA50R500CE
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (13 pp, sha256 12ed0ffd9110755c, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF