component
IPA083N10N5
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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ipa083n10n5: specified limits as data (metadata.characteristics, 28 rows from the datasheet)
2 files changed
+378
README.md+35@@ -27,6 +27,41 @@ Same part, different packaging or reel option. - `IPA083N10N5` +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Continuous drain current | ID | | | 44 | A | TC=25°C | 3 |+| Continuous drain current | ID | | | 32 | A | TC=100°C | 3 |+| Pulsed drain current | ID,pulse | | | 176 | A | TC=25°C | 3 |+| Avalanche energy, single pulse | EAS | | | 83 | mJ | ID=44A,RGS=25Ω | 3 |+| Gate source voltage | VGS | -20 | | 20 | V | | 3 |+| Power dissipation | Ptot | | | 36 | W | TC=25°C | 3 |+| Operating and storage temperature | Tj,Tstg | -55 | | 175 | °C | IEC climatic category; DIN IEC 68-1: 55/175/56 | 3 |+| Thermal resistance, junction - case | RthJC | | 3.1 | 4.1 | K/W | | 3 |+| Drain-source breakdown voltage | V(BR)DSS | 100 | | | V | VGS=0V,ID=1mA | 3 |+| Gate threshold voltage | VGS(th) | 2.2 | 3 | 3.8 | V | VDS=VGS,ID=49µA | 3 |+| Zero gate voltage drain current | IDSS | | 0.1 | 1 | µA | VDS=100V,VGS=0V,Tj=25°C | 3 |+| Zero gate voltage drain current | IDSS | | 10 | 100 | µA | VDS=100V,VGS=0V,Tj=125°C | 3 |+| Gate-source leakage current | IGSS | | 1 | 100 | nA | VGS=20V,VDS=0V | 3 |+| Drain-source on-state resistance | RDS(on) | | 7.2 | 8.3 | mΩ | VGS=10V,ID=44A | 3 |+| Drain-source on-state resistance | RDS(on) | | 8.8 | 11 | mΩ | VGS=6V,ID=22A | 3 |+| Gate resistance | RG | | 1.2 | 1.8 | Ω | | 3 |+| Transconductance | gfs | 38 | 76 | | S | /VDS/>2/ID/RDS(on)max,ID=44A | 3 |+| Input capacitance | Ciss | | 2100 | 2730 | pF | VGS=0V,VDS=50V,f=1MHz | 4 |+| Output capacitance | Coss | | 337 | 438 | pF | VGS=0V,VDS=50V,f=1MHz | 4 |+| Reverse transfer capacitance | Crss | | 16 | 28 | pF | VGS=0V,VDS=50V,f=1MHz | 4 |+| Gate to drain charge | Qgd | | 6 | 10 | nC | VDD=50V,ID=44A,VGS=0to10V | 4 |+| Gate charge total | Qg | | 30 | 37 | nC | VDD=50V,ID=44A,VGS=0to10V | 4 |+| Output charge | Qoss | | 40 | 53 | nC | VDD=50V,VGS=0V | 4 |+| Diode continuous forward current | IS | | | 30 | A | TC=25°C | 4 |+| Diode pulse current | IS,pulse | | | 176 | A | TC=25°C | 4 |+| Diode forward voltage | VSD | | 0.9 | 1.2 | V | VGS=0V,IF=44A,Tj=25°C | 4 |+| Reverse recovery time | trr | | 55 | 110 | ns | VR=50V,IF=IS,diF/dt=100A/µs | 4 |+| Reverse recovery charge | Qrr | | 95 | 190 | nC | VR=50V,IF=IS,diF/dt=100A/µs | 4 |+ ## CAD (KiCad official) - Symbol: `IPA083N10N5`
page.json+343@@ -116,6 +116,349 @@ "Package": "TO-220", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "a27bdf0c5d14f3a0",+ "rows": [+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 44,+ "conditions": "TC=25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 32,+ "conditions": "TC=100°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "ID,pulse",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 176,+ "conditions": "TC=25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy, single pulse",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 83,+ "conditions": "ID=44A,RGS=25Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 36,+ "conditions": "TC=25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Operating and storage temperature",+ "symbol": "Tj,Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "IEC climatic category; DIN IEC 68-1: 55/175/56",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - case",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": 3.1,+ "max": 4.1,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V,ID=1mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2.2,+ "typ": 3,+ "max": 3.8,+ "conditions": "VDS=VGS,ID=49µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.1,+ "max": 1,+ "conditions": "VDS=100V,VGS=0V,Tj=25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 10,+ "max": 100,+ "conditions": "VDS=100V,VGS=0V,Tj=125°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": 1,+ "max": 100,+ "conditions": "VGS=20V,VDS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 7.2,+ "max": 8.3,+ "conditions": "VGS=10V,ID=44A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 8.8,+ "max": 11,+ "conditions": "VGS=6V,ID=22A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate resistance",+ "symbol": "RG",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.2,+ "max": 1.8,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": 38,+ "typ": 76,+ "max": null,+ "conditions": "|VDS|>2|ID|RDS(on)max,ID=44A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 2100,+ "max": 2730,+ "conditions": "VGS=0V,VDS=50V,f=1MHz",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 337,+ "max": 438,+ "conditions": "VGS=0V,VDS=50V,f=1MHz",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 16,+ "max": 28,+ "conditions": "VGS=0V,VDS=50V,f=1MHz",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate to drain charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 6,+ "max": 10,+ "conditions": "VDD=50V,ID=44A,VGS=0to10V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate charge total",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 30,+ "max": 37,+ "conditions": "VDD=50V,ID=44A,VGS=0to10V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Output charge",+ "symbol": "Qoss",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 40,+ "max": 53,+ "conditions": "VDD=50V,VGS=0V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Diode continuous forward current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "TC=25°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Diode pulse current",+ "symbol": "IS,pulse",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 176,+ "conditions": "TC=25°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.9,+ "max": 1.2,+ "conditions": "VGS=0V,IF=44A,Tj=25°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 55,+ "max": 110,+ "conditions": "VR=50V,IF=IS,diF/dt=100A/µs",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 95,+ "max": 190,+ "conditions": "VR=50V,IF=IS,diF/dt=100A/µs",+ "source_page": 4,+ "source": "datasheet"+ }+ ] } }, "variants": [