component
IPA083N10N5
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,19 +32,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate. Isolated MOS gate controlling channel conduction. VGS rated \u00b120 V; typical VGS(th)=3.0 V (2.2 V min / 3.8 V max at ID=49 \u00b5A); typical RG=1.2 \u03a9; total gate charge Qg\u224830 nC (0-10 V)."+ "description": "Gate. Isolated MOS gate controlling channel conduction. VGS rated ±20 V; typical VGS(th)=3.0 V (2.2 V min / 3.8 V max at ID=49 µA); typical RG=1.2 Ω; total gate charge Qg≈30 nC (0-10 V)." }, { "number": "2", "name": "D", "type": "passive",- "description": "Drain. Power terminal; V(BR)DSS \u2265 100 V, ID=44 A at TC=25 \u00b0C (32 A at TC=100 \u00b0C), pulsed ID=176 A. RDS(on) typ 7.2 m\u03a9 / max 8.3 m\u03a9 at VGS=10 V, ID=44 A. Also serves as thermal path to the (isolated) heat-slug tab of the TO-220-FP."+ "description": "Drain. Power terminal; V(BR)DSS ≥ 100 V, ID=44 A at TC=25 °C (32 A at TC=100 °C), pulsed ID=176 A. RDS(on) typ 7.2 mΩ / max 8.3 mΩ at VGS=10 V, ID=44 A. Also serves as thermal path to the (isolated) heat-slug tab of the TO-220-FP." }, { "number": "3", "name": "S", "type": "passive",- "description": "Source. Power terminal and reference for VGS/VDS. Intrinsic body diode from Source to Drain (VSD typ 0.9 V, max 1.2 V at IF=44 A, Tj=25 \u00b0C; IS=30 A continuous, trr typ 55 ns)."+ "description": "Source. Power terminal and reference for VGS/VDS. Intrinsic body diode from Source to Drain (VSD typ 0.9 V, max 1.2 V at IF=44 A, Tj=25 °C; IS=30 A continuous, trr typ 55 ns)." } ], "provenance": {@@ -114,5 +114,8 @@ "docs/ipa083n10n5-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }