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IMZA65R057M1HXKSA1
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Infineon Technologies MOSFETs, TO-247-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IMZA65R057M1HXKSA1
Infineon Technologies · MOSFETs · TO-247-4
IMZA65R057M1HXKSA1 from Infineon Technologies, in a TO-247-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain connects to pin 1 and the metal tab, rated for VDS 650 V at TJ=25°C and continuous drain current 35 A at TC=25°C. |
| 2 | Power Source | passive | Power source is the main current return and must not be exchanged with the driver source pin, as exchange may cause malfunction. |
| 3 | Driver Source | passive | Kelvin driver source provides the gate-drive reference and must not be exchanged with the power source pin, as exchange may cause malfunction. |
| 4 | Gate | input | Gate is driven at a recommended VGS of 0 V to 18 V, with static limits of -2 V to 20 V and dynamic limits of -5 V to 23 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-4 |
| Category | Transistors/Thyristors |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current (TC=25°C) | ID | 35 | A | TC=25°C | 3 | ||
| Continuous drain current (TC=100°C) | ID | 25 | A | TC=100°C | 3 | ||
| Pulsed drain current | ID,pulse | 85 | A | TC=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 142 | mJ | ID=5.3A,VDD=50V,L=10.1mH; see table 10 | 3 | ||
| Avalanche energy, repetitive | EAR | 0.71 | mJ | ID=5.3A,VDD=50V; see table 10 | 3 | ||
| Avalanche current, single pulse | IAS | 5.3 | A | 3 | |||
| MOSFET dv/dt ruggedness | dv/dt | 200 | V/ns | VDS=0...400V | 3 | ||
| Gate source voltage (static) | VGS | -2 | 20 | V | static | 3 | |
| Gate source voltage (recommended driving voltage) | VGS | 0 | 18 | V | 3 | ||
| Gate source voltage (dynamic) | VGS | -5 | 23 | V | tpulse,negative<=15ns; tpulse,positive<=1% duty cycle/fsw | 3 | |
| Power dissipation | Ptot | 133 | W | TC=25°C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Operating junction temperature | TJ | -55 | 175 | °C | 3 | ||
| Mounting torque | 60 | Ncm | M3 and M3.5 screws | 3 | |||
| Continuous diode forward current | IS | 35 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | 85 | A | TC=25°C | 3 | ||
| Thermal resistance, junction - case | RthJC | 1.13 | °C/W | 4 | |||
| Thermal resistance, junction - ambient | RthJA | 62 | °C/W | leaded | 4 | ||
| Soldering temperature, wavesoldering (leads only) | Tsold | 260 | °C | 1.6mm (0.063 in.) from case for 10s | 4 | ||
| Drain-source breakdown voltage | V(BR)DSS | 650 | V | VGS=0V, ID=0.50mA | 5 | ||
| Gate threshold voltage | V(GS)th | 3.5 | 4.5 | 5.7 | V | VDS=VGS, ID=5mA | 5 |
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V, VDS=0V | 5 | ||
| Drain-source on-state resistance | RDS(on) | 0.057 | 0.074 | Ω | VGS=18V, ID=16.7A, TJ=25°C | 5 | |
| Drain-source on-state resistance | RDS(on) | 0.08 | Ω | VGS=18V, ID=16.7A, TJ=175°C | 5 | ||
| Output capacitance | Coss | 107 | 139 | pF | VGS=0V, VDS=400V, f=250kHz | 5 | |
| Output charge | Qoss | 65 | 84 | nC | calculation based on Coss | 5 |
CAD (KiCad official)
- Symbol:
IMZA65R057M1HXKSA1 - Footprint:
Package_TO_SOT_THT:TO-247-4_Vertical - 3D model: TO-247-4 (KiCad packages3D, STEP)
- 3D model files:
imza65r057m1hxksa1-etched.step/imza65r057m1hxksa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);imza65r057m1hxksa1.step/imza65r057m1hxksa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (15 pp, sha256
2e1d5597876e68ec, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IMZA65R057M1HXKSA1
**Infineon Technologies** · MOSFETs · TO-247-4
IMZA65R057M1HXKSA1 from Infineon Technologies, in a TO-247-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain connects to pin 1 and the metal tab, rated for VDS 650 V at TJ=25°C and continuous drain current 35 A at TC=25°C. |
| 2 | Power Source | passive | Power source is the main current return and must not be exchanged with the driver source pin, as exchange may cause malfunction. |
| 3 | Driver Source | passive | Kelvin driver source provides the gate-drive reference and must not be exchanged with the power source pin, as exchange may cause malfunction. |
| 4 | Gate | input | Gate is driven at a recommended VGS of 0 V to 18 V, with static limits of -2 V to 20 V and dynamic limits of -5 V to 23 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-4 |
| Category | Transistors/Thyristors |
| Pins | 4 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current (TC=25°C) | ID | | | 35 | A | TC=25°C | 3 |
| Continuous drain current (TC=100°C) | ID | | | 25 | A | TC=100°C | 3 |
| Pulsed drain current | ID,pulse | | | 85 | A | TC=25°C | 3 |
| Avalanche energy, single pulse | EAS | | | 142 | mJ | ID=5.3A,VDD=50V,L=10.1mH; see table 10 | 3 |
| Avalanche energy, repetitive | EAR | | | 0.71 | mJ | ID=5.3A,VDD=50V; see table 10 | 3 |
| Avalanche current, single pulse | IAS | | | 5.3 | A | | 3 |
| MOSFET dv/dt ruggedness | dv/dt | | | 200 | V/ns | VDS=0...400V | 3 |
| Gate source voltage (static) | VGS | -2 | | 20 | V | static | 3 |
| Gate source voltage (recommended driving voltage) | VGS | 0 | | 18 | V | | 3 |
| Gate source voltage (dynamic) | VGS | -5 | | 23 | V | tpulse,negative<=15ns; tpulse,positive<=1% duty cycle/fsw | 3 |
| Power dissipation | Ptot | | | 133 | W | TC=25°C | 3 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 3 |
| Operating junction temperature | TJ | -55 | | 175 | °C | | 3 |
| Mounting torque | | | | 60 | Ncm | M3 and M3.5 screws | 3 |
| Continuous diode forward current | IS | | | 35 | A | TC=25°C | 3 |
| Diode pulse current | IS,pulse | | | 85 | A | TC=25°C | 3 |
| Thermal resistance, junction - case | RthJC | | | 1.13 | °C/W | | 4 |
| Thermal resistance, junction - ambient | RthJA | | | 62 | °C/W | leaded | 4 |
| Soldering temperature, wavesoldering (leads only) | Tsold | | | 260 | °C | 1.6mm (0.063 in.) from case for 10s | 4 |
| Drain-source breakdown voltage | V(BR)DSS | 650 | | | V | VGS=0V, ID=0.50mA | 5 |
| Gate threshold voltage | V(GS)th | 3.5 | 4.5 | 5.7 | V | VDS=VGS, ID=5mA | 5 |
| Gate-source leakage current | IGSS | | | 100 | nA | VGS=20V, VDS=0V | 5 |
| Drain-source on-state resistance | RDS(on) | | 0.057 | 0.074 | Ω | VGS=18V, ID=16.7A, TJ=25°C | 5 |
| Drain-source on-state resistance | RDS(on) | | 0.08 | | Ω | VGS=18V, ID=16.7A, TJ=175°C | 5 |
| Output capacitance | Coss | | 107 | 139 | pF | VGS=0V, VDS=400V, f=250kHz | 5 |
| Output charge | Qoss | | 65 | 84 | nC | calculation based on Coss | 5 |
## CAD (KiCad official)
- Symbol: `IMZA65R057M1HXKSA1`
- Footprint: `Package_TO_SOT_THT:TO-247-4_Vertical`
- 3D model: TO-247-4 (KiCad packages3D, STEP)
- 3D model files: `imza65r057m1hxksa1-etched.step` / `imza65r057m1hxksa1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `imza65r057m1hxksa1.step` / `imza65r057m1hxksa1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603074255593107456) (15 pp, sha256 `2e1d5597876e68ec`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/imza65r057m1hxksa1-datasheet.pdf)