component

IMZA65R057M1HXKSA1

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TO-247-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsimza65r057m1hxksa1factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 22d ago
viewers imza65r057m1hxksa1: symbol repaired (body fitted to the names) · Ray 2d ago
imza65r057m1hxksa1-etched.glb Publish 0.1.0 · Ray 22d ago
imza65r057m1hxksa1-etched.step imza65r057m1hxksa1: factory component page (tier=lcsc) · Ray 22d ago
imza65r057m1hxksa1-hero.glb imza65r057m1hxksa1: hero GLB from the etched model (keeps the MPN mark) · Ray 22d ago
imza65r057m1hxksa1-hero.overlay.json Publish 0.1.0 · Ray 22d ago
imza65r057m1hxksa1.glb Publish 0.1.0 · Ray 22d ago
imza65r057m1hxksa1.kicad_mod Publish 0.1.0 · Ray 22d ago
imza65r057m1hxksa1.kicad_sym imza65r057m1hxksa1: symbol repaired (body fitted to the names) · Ray 2d ago
imza65r057m1hxksa1.lbr imza65r057m1hxksa1: symbol repaired (body fitted to the names) · Ray 2d ago
imza65r057m1hxksa1.step Publish 0.1.0 · Ray 22d ago
package.json Publish 0.1.0 · Ray 22d ago
page.json Set visibility: public · Ray 22d ago
README.md Publish 0.1.0 · Ray 22d ago

IMZA65R057M1HXKSA1

Infineon Technologies · MOSFETs · TO-247-4

IMZA65R057M1HXKSA1 from Infineon Technologies, in a TO-247-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain connects to pin 1 and the metal tab, rated for VDS 650 V at TJ=25°C and continuous drain current 35 A at TC=25°C.
2 Power Source passive Power source is the main current return and must not be exchanged with the driver source pin, as exchange may cause malfunction.
3 Driver Source passive Kelvin driver source provides the gate-drive reference and must not be exchanged with the power source pin, as exchange may cause malfunction.
4 Gate input Gate is driven at a recommended VGS of 0 V to 18 V, with static limits of -2 V to 20 V and dynamic limits of -5 V to 23 V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-4
Category Transistors/Thyristors
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current (TC=25°C) ID 35 A TC=25°C 3
Continuous drain current (TC=100°C) ID 25 A TC=100°C 3
Pulsed drain current ID,pulse 85 A TC=25°C 3
Avalanche energy, single pulse EAS 142 mJ ID=5.3A,VDD=50V,L=10.1mH; see table 10 3
Avalanche energy, repetitive EAR 0.71 mJ ID=5.3A,VDD=50V; see table 10 3
Avalanche current, single pulse IAS 5.3 A 3
MOSFET dv/dt ruggedness dv/dt 200 V/ns VDS=0...400V 3
Gate source voltage (static) VGS -2 20 V static 3
Gate source voltage (recommended driving voltage) VGS 0 18 V 3
Gate source voltage (dynamic) VGS -5 23 V tpulse,negative<=15ns; tpulse,positive<=1% duty cycle/fsw 3
Power dissipation Ptot 133 W TC=25°C 3
Storage temperature Tstg -55 150 °C 3
Operating junction temperature TJ -55 175 °C 3
Mounting torque 60 Ncm M3 and M3.5 screws 3
Continuous diode forward current IS 35 A TC=25°C 3
Diode pulse current IS,pulse 85 A TC=25°C 3
Thermal resistance, junction - case RthJC 1.13 °C/W 4
Thermal resistance, junction - ambient RthJA 62 °C/W leaded 4
Soldering temperature, wavesoldering (leads only) Tsold 260 °C 1.6mm (0.063 in.) from case for 10s 4
Drain-source breakdown voltage V(BR)DSS 650 V VGS=0V, ID=0.50mA 5
Gate threshold voltage V(GS)th 3.5 4.5 5.7 V VDS=VGS, ID=5mA 5
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V 5
Drain-source on-state resistance RDS(on) 0.057 0.074 Ω VGS=18V, ID=16.7A, TJ=25°C 5
Drain-source on-state resistance RDS(on) 0.08 Ω VGS=18V, ID=16.7A, TJ=175°C 5
Output capacitance Coss 107 139 pF VGS=0V, VDS=400V, f=250kHz 5
Output charge Qoss 65 84 nC calculation based on Coss 5

CAD (KiCad official)

  • Symbol: IMZA65R057M1HXKSA1
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4 (KiCad packages3D, STEP)
  • 3D model files: imza65r057m1hxksa1-etched.step / imza65r057m1hxksa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); imza65r057m1hxksa1.step / imza65r057m1hxksa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (15 pp, sha256 2e1d5597876e68ec, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF