component
IMW120R220M1HXKSA1
Public Made by Adomby adom
Infineon Technologies Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
123456789101112131415161718192021222324252627282930313233343536373839404142434445464748495051525354555657585960616263646566676869707172737475767778798081828384858687888990919293949596979899100101102103104105106107108109110111112113114115116117118119120121122123124125126127128129130131132133134135136137138139140141142143144145146147148149150151152153154155156157158159160161162163164165166167168169170171172173174175176177178179180181182183184185186187188189190191192193194195196197198199200201202203204205206207208209210211212213214215216217218219220221222223224225226227228229230231232233234235236237238239240241242243244245246247248249250251252253254255256257258259260261262263264265266267268269270271272273274275276277278279280281282283284285286287288289290291292293294295296297298299300301302303304305306307308309310311312313314315316317318319320321322323324325326327328329330331332333334335336337338339340341342343344345346347348349350351352353354355356357358359360361362363364365366367368369370371372373374375376377378379380381382383384385386387388389390391392393394395396397398399400401402403404405406407408409410411412413414415416417418419420421422423424425426427428429430431432433434435436437438439440441442443444445446447448449450451452453454455
{
"schema_version": 1,
"type": "component",
"slug": "imw120r220m1hxksa1",
"title": "IMW120R220M1HXKSA1",
"brief": "Infineon Technologies Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"silicon carbide (sic) devices",
"imw120r220m1hxksa1",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "IMW120R220M1HXKSA1",
"manufacturer": "Infineon Technologies",
"package": "TO-247-3",
"pin_count": 3,
"category": "Silicon Carbide (SiC) Devices",
"subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",
"datasheet": "https://datasheet.lcsc.com/datasheet/pdf/f5cd9b7c21d3b21cc47646358022db7d.pdf",
"parts": {
"symbol": "imw120r220m1hxksa1.kicad_sym",
"footprint": "imw120r220m1hxksa1.kicad_mod",
"model_3d": "imw120r220m1hxksa1-hero.glb",
"model_3d_plain": "imw120r220m1hxksa1-etched.glb",
"model_3d_step": "imw120r220m1hxksa1-etched.step",
"model_3d_step_plain": "imw120r220m1hxksa1.step",
"lbr": "imw120r220m1hxksa1.lbr"
},
"distributor_links": {
"lcsc": "C2997930",
"digikey": "IMW120R220M1HXKSA1-ND",
"mouser": "726-IMW120R220M1HXKS"
},
"distributor_check": {
"checked_at": "2026-10-28T20:25:26Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": "IMW120R220M1HXKSA1-ND",
"status": "found",
"lifecycle": "Active"
},
"mouser": {
"pn": "726-IMW120R220M1HXKS",
"status": "found",
"lifecycle": "Not Recommended for New Designs"
}
},
"pins": [
{
"number": "1",
"name": "Gate",
"type": "input",
"description": "Gate-source voltage is limited to -7 V to 23 V (max transient, <1% duty cycle), with recommended turn-on gate voltage of 15 V to 18 V and recommended turn-off gate voltage of 0 V."
},
{
"number": "2",
"name": "Drain",
"type": "passive",
"description": "Drain-source voltage VDSS is 1200 V (Tvj ≥ 25°C) and DC drain current is 13 A at TC = 25°C (9.5 A at TC = 100°C) for Rth(j-c,max), with VGS = 18 V."
},
{
"number": "3",
"name": "Source",
"type": "passive",
"description": "Source is the reference terminal for the gate-source voltage; the body diode DC forward current is 13 A at TC = 25°C (9.3 A at TC = 100°C) with VGS = 0 V."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-haiku-5-5",
"primary_mode": "text",
"consensus_model": "claude-sonnet-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: Pin numbers and names come from the pin labels in the Table 1 package callout on page 1 (Gate pin 1,; KiCad ERC types are assigned by convention (Gate as input, Drain and Source as passive) because the ; The datasheet gives no pin-specific limit for the Source terminal; the description is built from the"
],
"pages_sent": 17,
"cost_usd": 0.043,
"at": "2026-10-28T20:25:10"
},
"datasheet": {
"url": "https://datasheet.lcsc.com/datasheet/pdf/f5cd9b7c21d3b21cc47646358022db7d.pdf",
"pages": 17,
"sha256": "742bc74594406648",
"source_tier": "mfr"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 3,
"described": 3,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "imw120r220m1hxksa1.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
15.9,
5.03,
41.1
],
"zmin_mm": -15.83,
"centre_offset_mm": 0.185,
"footprint_binding": "identity",
"sha256": "ec0db59b04bcea2e0db6f976bf3ab8644e761c8b0059239f77f4febd6dc9eff4",
"checked": "2026-10-28",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "imw120r220m1hxksa1-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
15.9,
5.03,
41.1
],
"zmin_mm": -15.83,
"centre_offset_mm": 0.185,
"footprint_binding": "identity",
"sha256": "c5f660f148aab76d435c021985939e3e225e63fcb49c06198d49314873a7f709",
"checked": "2026-10-28",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "Infineon Technologies",
"Package": "TO-247-3",
"Category": "Silicon Carbide (SiC) Devices",
"Pins": "3"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "742bc7459440664899c66f1692f4b62898624e386f25468f7611aa25e76c97e1",
"rows": [
{
"name": "Drain-source voltage (Tvj ≥ 25°C)",
"symbol": "VDSS",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 1200,
"conditions": "Tvj ≥ 25°C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "DC drain current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 13,
"conditions": "VGS=18V, TC=25°C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "DC drain current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 9.5,
"conditions": "VGS=18V, TC=100°C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Pulsed drain current",
"symbol": "ID,pulse",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 21,
"conditions": "tp limited by Tvjmax, VGS=18V",
"source_page": 3,
"source": "datasheet"
},
{
"name": "DC body diode forward current",
"symbol": "ISD",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 13,
"conditions": "VGS=0V, TC=25°C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "DC body diode forward current",
"symbol": "ISD",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 9.3,
"conditions": "VGS=0V, TC=100°C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Pulsed body diode current",
"symbol": "ISD,pulse",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 32,
"conditions": "tp limited by Tvjmax",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Gate-source voltage",
"symbol": "VGS",
"kind": "absolute_maximum",
"unit": "V",
"min": -7,
"typ": null,
"max": 23,
"conditions": "Max transient voltage, <1% duty cycle",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Recommended turn-on gate voltage",
"symbol": "VGS,on",
"kind": "recommended_operating",
"unit": "V",
"min": 15,
"typ": null,
"max": 18,
"conditions": "",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Recommended turn-off gate voltage",
"symbol": "VGS,off",
"kind": "recommended_operating",
"unit": "V",
"min": null,
"typ": 0,
"max": null,
"conditions": "",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Short-circuit withstand time",
"symbol": "tSC",
"kind": "absolute_maximum",
"unit": "µs",
"min": null,
"typ": null,
"max": 3,
"conditions": "VDD=800V, VDS,peak<1200V, VGS,on=15V, Tj,start=25°C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Power dissipation, limited by Tvjmax",
"symbol": "Ptot",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 75,
"conditions": "TC=25°C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Power dissipation, limited by Tvjmax",
"symbol": "Ptot",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 37.5,
"conditions": "TC=100°C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Virtual junction temperature",
"symbol": "Tvj",
"kind": "absolute_maximum",
"unit": "°C",
"min": -55,
"typ": null,
"max": 175,
"conditions": "",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Storage temperature",
"symbol": "Tstg",
"kind": "absolute_maximum",
"unit": "°C",
"min": -55,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Soldering temperature",
"symbol": "Tsold",
"kind": "absolute_maximum",
"unit": "°C",
"min": null,
"typ": null,
"max": 260,
"conditions": "Wave soldering at leads, 1.6mm (0.063 in.) from case for 10 s",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Mounting torque",
"symbol": "M",
"kind": "absolute_maximum",
"unit": "Nm",
"min": null,
"typ": null,
"max": 0.6,
"conditions": "M3 screw; maximum of mounting processes: 3",
"source_page": 3,
"source": "datasheet"
},
{
"name": "MOSFET/body diode thermal resistance, junction-case",
"symbol": "Rth(j-c)",
"kind": "thermal",
"unit": "K/W",
"min": null,
"typ": 1.5,
"max": 2,
"conditions": "",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Thermal resistance, junction-ambient",
"symbol": "Rth(j-a)",
"kind": "thermal",
"unit": "K/W",
"min": null,
"typ": null,
"max": 62,
"conditions": "Leaded",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Gate-source leakage current",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": null,
"typ": null,
"max": 100,
"conditions": "VGS=23V, VDS=0V",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Gate-source leakage current",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": null,
"typ": null,
"max": -100,
"conditions": "VGS=-7V, VDS=0V",
"source_page": 5,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"imw120r220m1hxksa1"
],
"discovery_pitch": "IMW120R220M1HXKSA1 (Infineon Technologies) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"imw120r220m1hxksa1.kicad_sym",
"imw120r220m1hxksa1.kicad_mod",
"imw120r220m1hxksa1.glb",
"imw120r220m1hxksa1.step",
"imw120r220m1hxksa1.lbr",
"docs/hero.png",
"docs/imw120r220m1hxksa1-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"imw120r220m1hxksa1-hero.glb",
"imw120r220m1hxksa1-hero.overlay.json",
"imw120r220m1hxksa1-etched.glb"
],
"visibility": {
"public": true
}
}