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Contents

README

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IMW120R220M1HXKSA1

Infineon Technologies · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3

IMW120R220M1HXKSA1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate-source voltage is limited to -7 V to 23 V (max transient, <1% duty cycle), with recommended turn-on gate voltage of 15 V to 18 V and recommended turn-off gate voltage of 0 V.
2 Drain passive Drain-source voltage VDSS is 1200 V (Tvj ≥ 25°C) and DC drain current is 13 A at TC = 25°C (9.5 A at TC = 100°C) for Rth(j-c,max), with VGS = 18 V.
3 Source passive Source is the reference terminal for the gate-source voltage; the body diode DC forward current is 13 A at TC = 25°C (9.3 A at TC = 100°C) with VGS = 0 V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage (Tvj ≥ 25°C) VDSS 1200 V Tvj ≥ 25°C 3
DC drain current ID 13 A VGS=18V, TC=25°C 3
DC drain current ID 9.5 A VGS=18V, TC=100°C 3
Pulsed drain current ID,pulse 21 A tp limited by Tvjmax, VGS=18V 3
DC body diode forward current ISD 13 A VGS=0V, TC=25°C 3
DC body diode forward current ISD 9.3 A VGS=0V, TC=100°C 3
Pulsed body diode current ISD,pulse 32 A tp limited by Tvjmax 3
Gate-source voltage VGS -7 23 V Max transient voltage, <1% duty cycle 3
Recommended turn-on gate voltage VGS,on 15 18 V 3
Recommended turn-off gate voltage VGS,off 0 V 3
Short-circuit withstand time tSC 3 µs VDD=800V, VDS,peak<1200V, VGS,on=15V, Tj,start=25°C 3
Power dissipation, limited by Tvjmax Ptot 75 W TC=25°C 3
Power dissipation, limited by Tvjmax Ptot 37.5 W TC=100°C 3
Virtual junction temperature Tvj -55 175 °C 3
Storage temperature Tstg -55 150 °C 3
Soldering temperature Tsold 260 °C Wave soldering at leads, 1.6mm (0.063 in.) from case for 10 s 3
Mounting torque M 0.6 Nm M3 screw; maximum of mounting processes: 3 3
MOSFET/body diode thermal resistance, junction-case Rth(j-c) 1.5 2 K/W 4
Thermal resistance, junction-ambient Rth(j-a) 62 K/W Leaded 4
Gate-source leakage current IGSS 100 nA VGS=23V, VDS=0V 5
Gate-source leakage current IGSS -100 nA VGS=-7V, VDS=0V 5

CAD (KiCad official)

  • Symbol: IMW120R220M1HXKSA1
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: imw120r220m1hxksa1-etched.step / imw120r220m1hxksa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); imw120r220m1hxksa1.step / imw120r220m1hxksa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (17 pp, sha256 742bc74594406648, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF