IMW120R220M1HXKSA1

{
  "slug": "imw120r220m1hxksa1",
  "version": "0.1.0",
  "type": "component",
  "description": "Infineon Technologies Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "tags": [
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    "silicon carbide (sic) devices",
    "imw120r220m1hxksa1",
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  "dependencies": {},
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    "path": "docs/hero.png"
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    "imw120r220m1hxksa1.glb",
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    "imw120r220m1hxksa1.lbr",
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  "component": {
    "mpn": "IMW120R220M1HXKSA1",
    "manufacturer": "Infineon Technologies",
    "package": "TO-247-3",
    "pin_count": 3,
    "category": "Silicon Carbide (SiC) Devices",
    "subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/f5cd9b7c21d3b21cc47646358022db7d.pdf",
    "parts": {
      "symbol": "imw120r220m1hxksa1.kicad_sym",
      "footprint": "imw120r220m1hxksa1.kicad_mod",
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      "lbr": "imw120r220m1hxksa1.lbr"
    },
    "distributor_links": {
      "lcsc": "C2997930",
      "digikey": "IMW120R220M1HXKSA1-ND",
      "mouser": "726-IMW120R220M1HXKS"
    },
    "distributor_check": {
      "checked_at": "2026-10-28T20:25:26Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "IMW120R220M1HXKSA1-ND",
        "status": "found",
        "lifecycle": "Active"
      },
      "mouser": {
        "pn": "726-IMW120R220M1HXKS",
        "status": "found",
        "lifecycle": "Not Recommended for New Designs"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "Gate",
        "type": "input",
        "description": "Gate-source voltage is limited to -7 V to 23 V (max transient, <1% duty cycle), with recommended turn-on gate voltage of 15 V to 18 V and recommended turn-off gate voltage of 0 V."
      },
      {
        "number": "2",
        "name": "Drain",
        "type": "passive",
        "description": "Drain-source voltage VDSS is 1200 V (Tvj ≥ 25°C) and DC drain current is 13 A at TC = 25°C (9.5 A at TC = 100°C) for Rth(j-c,max), with VGS = 18 V."
      },
      {
        "number": "3",
        "name": "Source",
        "type": "passive",
        "description": "Source is the reference terminal for the gate-source voltage; the body diode DC forward current is 13 A at TC = 25°C (9.3 A at TC = 100°C) with VGS = 0 V."
      }
    ],
    "provenance": {
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        "guard_notes": [
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      "pins": {
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        "described": 3,
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        "refuses_to_fabricate": true
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}