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IMBG65R260M1HXTMA1

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Infineon Technologies MOSFETs, TO-263-7. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IMBG65R260M1HXTMA1

Infineon Technologies · MOSFETs · TO-263-7

IMBG65R260M1HXTMA1 from Infineon Technologies, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input MOSFET gate, with an operating range of VGS -2 V to 20 V including undershoots, static limits of -5 V to 23 V, and transient limits of -7 V to 25 V (positive transient at 1% duty cycle or less).
2 Driver Source passive Driver (sense) source pin, which the datasheet says is not exchangeable with the power source pin because exchanging them might lead to malfunction.
3 Power Source passive Power source pin carrying the main drain current, rated at 6 A continuous drain current at TC=25°C and 5 A at TC=100°C.
4 Power Source passive Power source pin carrying the main drain current, rated at 6 A continuous drain current at TC=25°C and 5 A at TC=100°C.
5 Power Source passive Power source pin carrying the main drain current, rated at 6 A continuous drain current at TC=25°C and 5 A at TC=100°C.
6 Power Source passive Power source pin carrying the main drain current, rated at 6 A continuous drain current at TC=25°C and 5 A at TC=100°C.
7 Power Source passive Power source pin carrying the main drain current, rated at 6 A continuous drain current at TC=25°C and 5 A at TC=100°C.
8 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-263-7
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous DC drain current ID 6 A TC=25°C 3
Continuous DC drain current ID 5 A TC=100°C 3
Peak drain current IDM 19 A TC=25°C 3
Avalanche energy, single pulse EAS 30 mJ ID=1.1A,VDD=50V; see table 11 3
Avalanche energy, repetitive EAR 0.15 mJ ID=1.1A,VDD=50V; see table 11 3
Avalanche current, single pulse IAS 1.1 A 3
MOSFET dv/dt ruggedness dv/dt 200 V/ns VDS=0...400V 3
Gate source voltage (static) VGS -5 23 V static 3
Gate source voltage (transient) VGS -7 25 V tpulse, positive <=1% duty cycle/fsw 3
Power dissipation Ptot 65 W TC=25°C 3
Storage temperature Tstg -55 150 °C 3
Operating junction temperature TJ -55 175 °C 3
Continuous reverse drain current ISDC 6 A VGS=18V,TC=25°C 3
Repetitive peak reverse drain current ISRM 19 A TC=25°C, pulsewidth tp<=250ns 3
Gate-source voltage operating range including undershoots VGS -2 20 V 4
Thermal resistance, junction - case RthJC 2.3 °C/W 4
Thermal resistance, junction - ambient RthJA 62 °C/W device on PCB, minimal footprint 4
Thermal resistance, junction - ambient for SMD version RthJA 35 45 °C/W Device on 40mm40mm1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm) copper area for drain connection and cooling; PCB vertical without air stream cooling 4
Soldering temperature, wave- & reflow soldering allowed Tsold 260 °C reflow MSL1 4
Drain-source breakdown voltage V(BR)DSS 650 V VGS=0V, ID=0.17mA 5
Gate threshold voltage VGS(th) 3.5 4.5 5.7 V VDS=VGS, ID=1.1mA 5
Zero gate voltage drain current IDSS 1 150 µA VDS=650V, VGS=0V, TJ=25°C 5
Gate leakage current IGSS 100 nA VGS=20V, VDS=0V 5
Drain-source on-state resistance RDS(on) 0.26 0.346 Ω VGS=18V, ID=3.6A, TJ=25°C 5
Output capacitance Coss 37 48 pF VGS=0V, VDS=400V, f=250kHz 5
Output charge Qoss 22 29 nC calculation based on Coss 5

CAD (KiCad official)

  • Symbol: IMBG65R260M1HXTMA1
  • Footprint: Package_TO_SOT_SMD:TO-263-7_TabPin8
  • 3D model: TO-263-7 (KiCad packages3D, STEP)
  • 3D model files: imbg65r260m1hxtma1-etched.step / imbg65r260m1hxtma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); imbg65r260m1hxtma1.step / imbg65r260m1hxtma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (15 pp, sha256 dab56080ea54a79d, retrieved 2026-10-29, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF