component
IMBG65R260M1HXTMA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-263-7. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIMBG65R260M1HXTMA1
Infineon Technologies · MOSFETs · TO-263-7
IMBG65R260M1HXTMA1 from Infineon Technologies, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate, with an operating range of VGS -2 V to 20 V including undershoots, static limits of -5 V to 23 V, and transient limits of -7 V to 25 V (positive transient at 1% duty cycle or less). |
| 2 | Driver Source | passive | Driver (sense) source pin, which the datasheet says is not exchangeable with the power source pin because exchanging them might lead to malfunction. |
| 3 | Power Source | passive | Power source pin carrying the main drain current, rated at 6 A continuous drain current at TC=25°C and 5 A at TC=100°C. |
| 4 | Power Source | passive | Power source pin carrying the main drain current, rated at 6 A continuous drain current at TC=25°C and 5 A at TC=100°C. |
| 5 | Power Source | passive | Power source pin carrying the main drain current, rated at 6 A continuous drain current at TC=25°C and 5 A at TC=100°C. |
| 6 | Power Source | passive | Power source pin carrying the main drain current, rated at 6 A continuous drain current at TC=25°C and 5 A at TC=100°C. |
| 7 | Power Source | passive | Power source pin carrying the main drain current, rated at 6 A continuous drain current at TC=25°C and 5 A at TC=100°C. |
| 8 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-263-7 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous DC drain current | ID | 6 | A | TC=25°C | 3 | ||
| Continuous DC drain current | ID | 5 | A | TC=100°C | 3 | ||
| Peak drain current | IDM | 19 | A | TC=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 30 | mJ | ID=1.1A,VDD=50V; see table 11 | 3 | ||
| Avalanche energy, repetitive | EAR | 0.15 | mJ | ID=1.1A,VDD=50V; see table 11 | 3 | ||
| Avalanche current, single pulse | IAS | 1.1 | A | 3 | |||
| MOSFET dv/dt ruggedness | dv/dt | 200 | V/ns | VDS=0...400V | 3 | ||
| Gate source voltage (static) | VGS | -5 | 23 | V | static | 3 | |
| Gate source voltage (transient) | VGS | -7 | 25 | V | tpulse, positive <=1% duty cycle/fsw | 3 | |
| Power dissipation | Ptot | 65 | W | TC=25°C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Operating junction temperature | TJ | -55 | 175 | °C | 3 | ||
| Continuous reverse drain current | ISDC | 6 | A | VGS=18V,TC=25°C | 3 | ||
| Repetitive peak reverse drain current | ISRM | 19 | A | TC=25°C, pulsewidth tp<=250ns | 3 | ||
| Gate-source voltage operating range including undershoots | VGS | -2 | 20 | V | 4 | ||
| Thermal resistance, junction - case | RthJC | 2.3 | °C/W | 4 | |||
| Thermal resistance, junction - ambient | RthJA | 62 | °C/W | device on PCB, minimal footprint | 4 | ||
| Thermal resistance, junction - ambient for SMD version | RthJA | 35 | 45 | °C/W | Device on 40mm40mm1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm) copper area for drain connection and cooling; PCB vertical without air stream cooling | 4 | |
| Soldering temperature, wave- & reflow soldering allowed | Tsold | 260 | °C | reflow MSL1 | 4 | ||
| Drain-source breakdown voltage | V(BR)DSS | 650 | V | VGS=0V, ID=0.17mA | 5 | ||
| Gate threshold voltage | VGS(th) | 3.5 | 4.5 | 5.7 | V | VDS=VGS, ID=1.1mA | 5 |
| Zero gate voltage drain current | IDSS | 1 | 150 | µA | VDS=650V, VGS=0V, TJ=25°C | 5 | |
| Gate leakage current | IGSS | 100 | nA | VGS=20V, VDS=0V | 5 | ||
| Drain-source on-state resistance | RDS(on) | 0.26 | 0.346 | Ω | VGS=18V, ID=3.6A, TJ=25°C | 5 | |
| Output capacitance | Coss | 37 | 48 | pF | VGS=0V, VDS=400V, f=250kHz | 5 | |
| Output charge | Qoss | 22 | 29 | nC | calculation based on Coss | 5 |
CAD (KiCad official)
- Symbol:
IMBG65R260M1HXTMA1 - Footprint:
Package_TO_SOT_SMD:TO-263-7_TabPin8 - 3D model: TO-263-7 (KiCad packages3D, STEP)
- 3D model files:
imbg65r260m1hxtma1-etched.step/imbg65r260m1hxtma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);imbg65r260m1hxtma1.step/imbg65r260m1hxtma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (15 pp, sha256
dab56080ea54a79d, retrieved 2026-10-29, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).