# IKZA100N65EH7XKSA1

**Infineon Technologies** · IGBT Transistors / Modules · TO-247-4

IKZA100N65EH7XKSA1 from Infineon Technologies, in a TO-247-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector of the IGBT and cathode of the antiparallel diode, rated VCE 650 V and IC 100 A, also connected to the exposed die pad. |
| 2 | E | passive | Power emitter of the IGBT and anode of the antiparallel diode, carrying the main collector current up to 100 A. |
| 3 | K | passive | Kelvin emitter sense connection used as the gate-drive return, tied internally to the emitter. |
| 4 | G | input | Gate of the IGBT, with rated VGE of ±20 V and a gate-emitter threshold voltage of 2.9 V min to 4.8 V max. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-4 |
| Category | Transistors/Thyristors |
| Pins | 4 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCE |  |  | 650 | V | Tvj ≥ 25 °C | 3 |
| DC collector current (bondwire limited) | IC |  |  | 140 | A | Tc = 25 °C | 3 |
| DC collector current (bondwire limited) | IC |  |  | 136 | A | Tc = 100 °C | 3 |
| Pulsed collector current | ICpulse |  |  | 400 | A | tp limited by Tvjmax | 3 |
| Turn-off safe operating area |  |  |  | 400 | A | VCE ≤ 650 V, tp ≤ 1 µs, Tvj ≤ 175 °C | 3 |
| Gate-emitter voltage | VGE | -20 |  | 20 | V |  | 3 |
| Transient gate-emitter voltage | VGE | -30 |  | 30 | V | tp ≤ 10 µs, D < 0.01 | 3 |
| Power dissipation | Ptot |  |  | 429 | W | Tc = 25 °C | 3 |
| Power dissipation | Ptot |  |  | 214 | W | Tc = 100 °C | 3 |
| Diode forward current (bondwire limited) | IF |  |  | 140 | A | Tc = 25 °C | 5 |
| Diode forward current (bondwire limited) | IF |  |  | 105 | A | Tc = 100 °C | 5 |
| Diode pulsed current | IFpulse |  |  | 400 | A | tp limited by Tvjmax | 5 |
| Diode power dissipation | Ptot |  |  | 316 | W | Tc = 25 °C | 5 |
| Diode power dissipation | Ptot |  |  | 158 | W | Tc = 100 °C | 5 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 3 |
| Soldering temperature | Tsold |  |  | 260 | °C | wave soldering 1.6 mm (0.063 in.) from case for 10 s | 3 |
| Mounting torque | M |  |  | 0.6 | Nm | M3 screw, maximum of mounting process: 3 | 3 |
| IGBT thermal resistance, junction-case | Rth(j-c) |  | 0.27 | 0.35 | K/W |  | 3 |
| Diode thermal resistance, junction-case | Rth(j-c) |  | 0.36 | 0.47 | K/W |  | 3 |
| Thermal resistance, junction-ambient | Rth(j-a) |  |  | 40 | K/W |  | 3 |
| Collector-emitter saturation voltage | VCEsat |  | 1.4 | 1.65 | V | IC = 100 A, VGE = 15 V, Tvj = 25 °C | 3 |
| Collector-emitter saturation voltage | VCEsat |  | 1.6 |  | V | IC = 100 A, VGE = 15 V, Tvj = 175 °C | 3 |
| Gate-emitter threshold voltage | VGEth | 2.9 | 3.85 | 4.8 | V | IC = 0.88 mA, VCE = VGE | 4 |
| Zero gate-voltage collector current | ICES |  |  | 30 | µA | VCE = 650 V, VGE = 0 V, Tvj = 25 °C | 4 |
| Zero gate-voltage collector current | ICES |  |  | 3800 | µA | VCE = 650 V, VGE = 0 V, Tvj = 175 °C | 4 |
| Gate-emitter leakage current | IGES |  |  | 100 | nA | VCE = 0 V, VGE = 20 V | 4 |
| Diode forward voltage | VF |  | 1.65 | 2 | V | IF = 100 A, Tvj = 25 °C | 5 |
| Diode forward voltage | VF |  | 1.55 |  | V | IF = 100 A, Tvj = 175 °C | 5 |
| Operating junction temperature | Tvj | -40 |  | 175 | °C |  | 5 |
| Transconductance | gfs |  | 145 |  | S | IC = 100 A, VCE = 20 V | 4 |
| Input capacitance | Cies |  | 5150 |  | pF | VCE = 25 V, VGE = 0 V, f = 100 kHz | 4 |
| Output capacitance | Coes |  | 156.6 |  | pF | VCE = 25 V, VGE = 0 V, f = 100 kHz | 4 |
| Reverse transfer capacitance | Cres |  | 21.7 |  | pF | VCE = 25 V, VGE = 0 V, f = 100 kHz | 4 |
| Gate charge | QG |  | 207 |  | nC | VCC = 520 V, IC = 100 A, VGE = 15 V | 4 |
| Internal emitter inductance | LE |  | 13 |  | nH | measured 5 mm (0.197 in.) from case | 3 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts |  | silver | TO-247-4, 3Pin 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved. 3 | 1 |

## CAD (KiCad official)

- Symbol: `IKZA100N65EH7XKSA1`
- Footprint: `Package_TO_SOT_THT:TO-247-4_Vertical`
- 3D model: TO-247-4 (KiCad packages3D, STEP)
- 3D model files: `ikza100n65eh7xksa1-etched.step` / `ikza100n65eh7xksa1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ikza100n65eh7xksa1.step` / `ikza100n65eh7xksa1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](docs/ikza100n65eh7xksa1-datasheet.pdf) (17 pp, sha256 `beb9592ada2cbf83`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ikza100n65eh7xksa1-datasheet.pdf)