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IKZA100N65EH7XKSA1
Public Made by Adomby adom
Infineon Technologies IGBT Transistors / Modules, TO-247-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownIKZA100N65EH7XKSA1
Infineon Technologies · IGBT Transistors / Modules · TO-247-4
IKZA100N65EH7XKSA1 from Infineon Technologies, in a TO-247-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector of the IGBT and cathode of the antiparallel diode, rated VCE 650 V and IC 100 A, also connected to the exposed die pad. |
| 2 | E | passive | Power emitter of the IGBT and anode of the antiparallel diode, carrying the main collector current up to 100 A. |
| 3 | K | passive | Kelvin emitter sense connection used as the gate-drive return, tied internally to the emitter. |
| 4 | G | input | Gate of the IGBT, with rated VGE of ±20 V and a gate-emitter threshold voltage of 2.9 V min to 4.8 V max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-4 |
| Category | Transistors/Thyristors |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCE | 650 | V | Tvj ≥ 25 °C | 3 | ||
| DC collector current (bondwire limited) | IC | 140 | A | Tc = 25 °C | 3 | ||
| DC collector current (bondwire limited) | IC | 136 | A | Tc = 100 °C | 3 | ||
| Pulsed collector current | ICpulse | 400 | A | tp limited by Tvjmax | 3 | ||
| Turn-off safe operating area | 400 | A | VCE ≤ 650 V, tp ≤ 1 µs, Tvj ≤ 175 °C | 3 | |||
| Gate-emitter voltage | VGE | -20 | 20 | V | 3 | ||
| Transient gate-emitter voltage | VGE | -30 | 30 | V | tp ≤ 10 µs, D < 0.01 | 3 | |
| Power dissipation | Ptot | 429 | W | Tc = 25 °C | 3 | ||
| Power dissipation | Ptot | 214 | W | Tc = 100 °C | 3 | ||
| Diode forward current (bondwire limited) | IF | 140 | A | Tc = 25 °C | 5 | ||
| Diode forward current (bondwire limited) | IF | 105 | A | Tc = 100 °C | 5 | ||
| Diode pulsed current | IFpulse | 400 | A | tp limited by Tvjmax | 5 | ||
| Diode power dissipation | Ptot | 316 | W | Tc = 25 °C | 5 | ||
| Diode power dissipation | Ptot | 158 | W | Tc = 100 °C | 5 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Soldering temperature | Tsold | 260 | °C | wave soldering 1.6 mm (0.063 in.) from case for 10 s | 3 | ||
| Mounting torque | M | 0.6 | Nm | M3 screw, maximum of mounting process: 3 | 3 | ||
| IGBT thermal resistance, junction-case | Rth(j-c) | 0.27 | 0.35 | K/W | 3 | ||
| Diode thermal resistance, junction-case | Rth(j-c) | 0.36 | 0.47 | K/W | 3 | ||
| Thermal resistance, junction-ambient | Rth(j-a) | 40 | K/W | 3 | |||
| Collector-emitter saturation voltage | VCEsat | 1.4 | 1.65 | V | IC = 100 A, VGE = 15 V, Tvj = 25 °C | 3 | |
| Collector-emitter saturation voltage | VCEsat | 1.6 | V | IC = 100 A, VGE = 15 V, Tvj = 175 °C | 3 | ||
| Gate-emitter threshold voltage | VGEth | 2.9 | 3.85 | 4.8 | V | IC = 0.88 mA, VCE = VGE | 4 |
| Zero gate-voltage collector current | ICES | 30 | µA | VCE = 650 V, VGE = 0 V, Tvj = 25 °C | 4 | ||
| Zero gate-voltage collector current | ICES | 3800 | µA | VCE = 650 V, VGE = 0 V, Tvj = 175 °C | 4 | ||
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0 V, VGE = 20 V | 4 | ||
| Diode forward voltage | VF | 1.65 | 2 | V | IF = 100 A, Tvj = 25 °C | 5 | |
| Diode forward voltage | VF | 1.55 | V | IF = 100 A, Tvj = 175 °C | 5 | ||
| Operating junction temperature | Tvj | -40 | 175 | °C | 5 | ||
| Transconductance | gfs | 145 | S | IC = 100 A, VCE = 20 V | 4 | ||
| Input capacitance | Cies | 5150 | pF | VCE = 25 V, VGE = 0 V, f = 100 kHz | 4 | ||
| Output capacitance | Coes | 156.6 | pF | VCE = 25 V, VGE = 0 V, f = 100 kHz | 4 | ||
| Reverse transfer capacitance | Cres | 21.7 | pF | VCE = 25 V, VGE = 0 V, f = 100 kHz | 4 | ||
| Gate charge | QG | 207 | nC | VCC = 520 V, IC = 100 A, VGE = 15 V | 4 | ||
| Internal emitter inductance | LE | 13 | nH | measured 5 mm (0.197 in.) from case | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | silver | TO-247-4, 3Pin 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved. 3 | 1 |
CAD (KiCad official)
- Symbol:
IKZA100N65EH7XKSA1 - Footprint:
Package_TO_SOT_THT:TO-247-4_Vertical - 3D model: TO-247-4 (KiCad packages3D, STEP)
- 3D model files:
ikza100n65eh7xksa1-etched.step/ikza100n65eh7xksa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ikza100n65eh7xksa1.step/ikza100n65eh7xksa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (17 pp, sha256
beb9592ada2cbf83, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).