# IKWH40N67PR7XKSA1

**Infineon Technologies** · IGBT Transistors / Modules · TO-247-3

IKWH40N67PR7XKSA1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive limit is ±20 V continuous (±30 V transient for tp ≤ 0.5 µs) with a threshold VGEth of 3.2 V min, 3.95 V typ, 4.8 V max at IC = 0.228 mA. |
| 2 | C | passive | Collector (also the diode cathode), rated for VCE = 670 V and DC collector current of 88 A at Tc = 25 °C and 54 A at Tc = 100 °C. |
| 3 | E | passive | Emitter (also the diode anode), with internal emitter inductance LE of 13 nH measured 5 mm from the case. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter saturation voltage | VCEsat |  | 1.4 | 1.75 | V | IC = 40 A, Tvj = 25 °C | 3 |
| Gate-emitter threshold voltage | VGEth | 3.2 | 3.95 | 4.8 | V | IC = 0.228 mA, VCE = VGE | 4 |
| Zero gate-voltage collector current | ICES |  |  | 40 | mA | VCE = 670 V, VGE = 0 V, Tvj = 25 °C | 4 |
| Gate-emitter leakage current | IGES |  |  | 100 | nA | VCE = 0 V, VGE = 20 V | 4 |
| Collector-emitter voltage | VCE |  |  | 670 | V | Tvj ≥ 25 °C | 3 |
| DC collector current | IC |  |  | 88 | A | Tc = 25 °C, limited by Tvjmax | 3 |
| DC collector current | IC |  |  | 54 | A | Tc = 100 °C, limited by Tvjmax | 3 |
| Pulsed collector current | ICpulse |  |  | 120 | A | tp limited by Tvjmax | 3 |
| Turn-off safe operating area |  |  |  | 120 | A | VCE ≤ 670 V, Tvj ≤ 175 °C | 3 |
| Gate-emitter voltage | VGE | -20 |  | 20 | V |  | 3 |
| Transient gate-emitter voltage | VGE | -30 |  | 30 | V | tp ≤ 0.5 µs, D < 0.001 | 3 |
| Power dissipation | Ptot |  |  | 208 | W | Tc = 25 °C | 3 |
| Power dissipation | Ptot |  |  | 104 | W | Tc = 100 °C | 3 |
| Repetitive peak reverse voltage | VRRM |  |  | 670 | V | Tvj ≥ 25 °C | 5 |
| Diode pulsed current | IFpulse |  |  | 5 | A | tp limited by Tvjmax | 5 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 3 |
| Soldering temperature | Tsold |  |  | 260 | °C | wave soldering 1.6 mm (0.063 in.) from case for 10 s | 3 |
| Operating junction temperature | Tvj | -40 |  | 175 | °C |  | 5 |
| Thermal resistance, junction-case (IGBT) | Rth(j-c) |  | 0.72 | 0.93 | K/W |  | 3 |
| Thermal resistance, junction-ambient | Rth(j-a) |  |  | 40 | K/W |  | 3 |
| Mounting torque | M |  |  | 0.6 | Nm | M3 screw, Maximum of mounting processes: 3 | 3 |
| Collector-emitter saturation voltage | VCEsat |  | 1.7 |  | V | IC = 40 A, Tvj = 175 °C | 3 |
| Zero gate-voltage collector current | ICES |  | 0.5 |  | mA | VCE = 670 V, VGE = 0 V, Tvj = 175 °C | 4 |
| Internal emitter inductance | LE |  | 13 |  | nH | measured 5 mm (0.197 in.) from case | 3 |
| Transconductance | gfs |  | 69.6 |  | S | IC = 40 A, VCE = 20 V | 4 |
| Input capacitance | Cies |  | 2283 |  | pF | VCE = 25 V, VGE = 0 V, f = 100 kHz | 4 |
| Output capacitance | Coes |  | 30.9 |  | pF | VCE = 25 V, VGE = 0 V, f = 100 kHz | 4 |
| Reverse transfer capacitance | Cres |  | 11.6 |  | pF | VCE = 25 V, VGE = 0 V, f = 100 kHz | 4 |
| Gate charge | QG |  | 102 |  | nC | VCC = 520 V, IC = 40 A, VGE = 15 V | 4 |
| Turn-on delay time | td(on) |  | 16 |  | ns | Tvj = 25 °C, IC = 40 A, VCC = 400 V, VGE = 0/15 V, RG = 9.8 Ω | 4 |
| Rise time | tr |  | 15 |  | ns | Tvj = 25 °C, IC = 40 A, VCC = 400 V, VGE = 0/15 V, RG = 9.8 Ω | 4 |
| Turn-off delay time | td(off) |  | 146 |  | ns | Tvj = 25 °C, IC = 40 A, VCC = 400 V, VGE = 0/15 V, RG = 9.8 Ω | 4 |
| Fall time | tf |  | 28 |  | ns | Tvj = 25 °C, IC = 40 A, VCC = 400 V, VGE = 0/15 V, RG = 9.8 Ω | 4 |
| Turn-on energy | Eon |  | 0.66 |  | mJ | Tvj = 25 °C, IC = 40 A, VCC = 400 V, VGE = 0/15 V, RG = 9.8 Ω | 4 |
| Turn-off energy | Eoff |  | 0.4 |  | mJ | Tvj = 25 °C, IC = 40 A, VCC = 400 V, VGE = 0/15 V, RG = 9.8 Ω | 4 |
| Total switching energy | Ets |  | 1.06 |  | mJ | Tvj = 25 °C, IC = 40 A, VCC = 400 V, VGE = 0/15 V, RG = 9.8 Ω | 5 |
| Total switching energy | Ets |  | 1.8 |  | mJ | Tvj = 175 °C, IC = 40 A, VCC = 400 V, VGE = 0/15 V, RG = 9.8 Ω | 5 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts |  | silver | TO-247 HCC, 3Pin 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved. 2 | 1 |

## CAD (KiCad official)

- Symbol: `IKWH40N67PR7XKSA1`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `ikwh40n67pr7xksa1-etched.step` / `ikwh40n67pr7xksa1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ikwh40n67pr7xksa1.step` / `ikwh40n67pr7xksa1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://mm.digikey.com/Volume0/opasdata/d220001/medias/docus/6465/IKWH40N67PR7XKSA1.pdf) (14 pp, sha256 `51728639983a285b`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ikwh40n67pr7xksa1-datasheet.pdf)