Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

main

Generated by kicad-footprint-generator · KiCad file format 20260206

Name	Last commit message	Last updated
docs	Publish 0.1.0 · Ray	18d ago
viewers	ikwh40n67pr7xksa1: viewers · Ray	18d ago
ikwh40n67pr7xksa1-etched.glb	Publish 0.1.0 · Ray	18d ago
ikwh40n67pr7xksa1-etched.step	ikwh40n67pr7xksa1: factory component page (tier=lcsc) · Ray	18d ago
ikwh40n67pr7xksa1-hero.glb	ikwh40n67pr7xksa1: hero GLB from the etched model (keeps the MPN mark) · Ray	18d ago
ikwh40n67pr7xksa1-hero.overlay.json	Publish 0.1.0 · Ray	18d ago
ikwh40n67pr7xksa1.glb	Publish 0.1.0 · Ray	18d ago
ikwh40n67pr7xksa1.kicad_mod	Publish 0.1.0 · Ray	18d ago
ikwh40n67pr7xksa1.kicad_sym	Publish 0.1.0 · Ray	18d ago
ikwh40n67pr7xksa1.lbr	Publish 0.1.0 · Ray	18d ago
ikwh40n67pr7xksa1.step	Publish 0.1.0 · Ray	18d ago
package.json	Publish 0.1.0 · Ray	18d ago
page.json	Set visibility: public · Ray	18d ago
README.md	Publish 0.1.0 · Ray	18d ago

IKWH40N67PR7XKSA1

Infineon Technologies · IGBT Transistors / Modules · TO-247-3

IKWH40N67PR7XKSA1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; drive limit is ±20 V continuous (±30 V transient for tp ≤ 0.5 µs) with a threshold VGEth of 3.2 V min, 3.95 V typ, 4.8 V max at IC = 0.228 mA.
2	C	passive	Collector (also the diode cathode), rated for VCE = 670 V and DC collector current of 88 A at Tc = 25 °C and 54 A at Tc = 100 °C.
3	E	passive	Emitter (also the diode anode), with internal emitter inductance LE of 13 nH measured 5 mm from the case.

Key specifications

Parameter	Value
Manufacturer	Infineon Technologies
Package	TO-247-3
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector-emitter saturation voltage	VCEsat		1.4	1.75	V	IC = 40 A, Tvj = 25 °C	3
Gate-emitter threshold voltage	VGEth	3.2	3.95	4.8	V	IC = 0.228 mA, VCE = VGE	4
Zero gate-voltage collector current	ICES			40	mA	VCE = 670 V, VGE = 0 V, Tvj = 25 °C	4
Gate-emitter leakage current	IGES			100	nA	VCE = 0 V, VGE = 20 V	4
Collector-emitter voltage	VCE			670	V	Tvj ≥ 25 °C	3
DC collector current	IC			88	A	Tc = 25 °C, limited by Tvjmax	3
DC collector current	IC			54	A	Tc = 100 °C, limited by Tvjmax	3
Pulsed collector current	ICpulse			120	A	tp limited by Tvjmax	3
Turn-off safe operating area				120	A	VCE ≤ 670 V, Tvj ≤ 175 °C	3
Gate-emitter voltage	VGE	-20		20	V		3
Transient gate-emitter voltage	VGE	-30		30	V	tp ≤ 0.5 µs, D < 0.001	3
Power dissipation	Ptot			208	W	Tc = 25 °C	3
Power dissipation	Ptot			104	W	Tc = 100 °C	3
Repetitive peak reverse voltage	VRRM			670	V	Tvj ≥ 25 °C	5
Diode pulsed current	IFpulse			5	A	tp limited by Tvjmax	5
Storage temperature	Tstg	-55		150	°C		3
Soldering temperature	Tsold			260	°C	wave soldering 1.6 mm (0.063 in.) from case for 10 s	3
Operating junction temperature	Tvj	-40		175	°C		5
Thermal resistance, junction-case (IGBT)	Rth(j-c)		0.72	0.93	K/W		3
Thermal resistance, junction-ambient	Rth(j-a)			40	K/W		3
Mounting torque	M			0.6	Nm	M3 screw, Maximum of mounting processes: 3	3
Collector-emitter saturation voltage	VCEsat		1.7		V	IC = 40 A, Tvj = 175 °C	3
Zero gate-voltage collector current	ICES		0.5		mA	VCE = 670 V, VGE = 0 V, Tvj = 175 °C	4
Internal emitter inductance	LE		13		nH	measured 5 mm (0.197 in.) from case	3
Transconductance	gfs		69.6		S	IC = 40 A, VCE = 20 V	4
Input capacitance	Cies		2283		pF	VCE = 25 V, VGE = 0 V, f = 100 kHz	4
Output capacitance	Coes		30.9		pF	VCE = 25 V, VGE = 0 V, f = 100 kHz	4
Reverse transfer capacitance	Cres		11.6		pF	VCE = 25 V, VGE = 0 V, f = 100 kHz	4
Gate charge	QG		102		nC	VCC = 520 V, IC = 40 A, VGE = 15 V	4
Turn-on delay time	td(on)		16		ns	Tvj = 25 °C, IC = 40 A, VCC = 400 V, VGE = 0/15 V, RG = 9.8 Ω	4
Rise time	tr		15		ns	Tvj = 25 °C, IC = 40 A, VCC = 400 V, VGE = 0/15 V, RG = 9.8 Ω	4
Turn-off delay time	td(off)		146		ns	Tvj = 25 °C, IC = 40 A, VCC = 400 V, VGE = 0/15 V, RG = 9.8 Ω	4
Fall time	tf		28		ns	Tvj = 25 °C, IC = 40 A, VCC = 400 V, VGE = 0/15 V, RG = 9.8 Ω	4
Turn-on energy	Eon		0.66		mJ	Tvj = 25 °C, IC = 40 A, VCC = 400 V, VGE = 0/15 V, RG = 9.8 Ω	4
Turn-off energy	Eoff		0.4		mJ	Tvj = 25 °C, IC = 40 A, VCC = 400 V, VGE = 0/15 V, RG = 9.8 Ω	4
Total switching energy	Ets		1.06		mJ	Tvj = 25 °C, IC = 40 A, VCC = 400 V, VGE = 0/15 V, RG = 9.8 Ω	5
Total switching energy	Ets		1.8		mJ	Tvj = 175 °C, IC = 40 A, VCC = 400 V, VGE = 0/15 V, RG = 9.8 Ω	5

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part	Material	Colour / plating	Datasheet says	Page
contacts		silver	TO-247 HCC, 3Pin 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved. 2	1

CAD (KiCad official)

Symbol: IKWH40N67PR7XKSA1
Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
3D model: TO-247-3 (KiCad packages3D, STEP)
3D model files: ikwh40n67pr7xksa1-etched.step / ikwh40n67pr7xksa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikwh40n67pr7xksa1.step / ikwh40n67pr7xksa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Infineon Technologies datasheet (14 pp, sha256 51728639983a285b, retrieved 2026-10-23, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF