# IKWH30N65WR5XKSA1

**Infineon Technologies** · IGBT Transistors / Modules · TO-247-3

IKWH30N65WR5XKSA1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-emitter voltage is rated ±20 V continuous (±30 V transient, tp ≤ 10 µs, D < 0.01), with a threshold VGEth of 3.2 V min, 4 V typ and 4.8 V max at IC = 0.3 mA. |
| 2 | C | passive | Collector (also connected to the mounting tab, whose connection is not stated in the text); collector-emitter voltage is rated 650 V, with DC collector current of 75 A at Tc = 25 °C and 49 A at 100 °C. |
| 3 | E | passive | Emitter, shared with the anode of the integrated antiparallel diode; internal emitter inductance is 13.0 nH measured 5 mm from the case. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCE |  |  | 650 | V | Tvj ≥ 25 °C | 3 |
| DC collector current | IC |  |  | 75 | A | Tc = 25 °C | 3 |
| DC collector current | IC |  |  | 49 | A | Tc = 100 °C | 3 |
| Pulsed collector current | ICpulse |  |  | 90 | A | tp limited by Tvjmax | 3 |
| Turn-off safe operating area |  |  |  | 90 | A | VCE ≤ 650 V, tp ≤ 1 µs, Tvj ≤ 175 °C | 3 |
| Gate-emitter voltage | VGE | -20 |  | 20 | V |  | 3 |
| Transient gate-emitter voltage | VGE | -30 |  | 30 | V | tp ≤ 10 µs, D < 0.01 | 3 |
| Power dissipation | Ptot |  |  | 190 | W | Tc = 25 °C | 3 |
| Power dissipation | Ptot |  |  | 95 | W | Tc = 100 °C | 3 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 3 |
| Soldering temperature |  |  |  | 260 | °C | wave soldering 1.6 mm (0.063 in.) from case for 10 s | 3 |
| Mounting torque | M |  |  | 0.6 | Nm | M3 screw, maximum of mounting process: 3 | 3 |
| Repetitive peak reverse voltage | VRRM |  |  | 650 | V | Tvj ≥ 25 °C | 5 |
| Diode forward current | IF |  |  | 23 | A | Tc = 25 °C | 5 |
| Diode forward current | IF |  |  | 13 | A | Tc = 100 °C | 5 |
| Diode pulsed current | IFpulse |  |  | 45 | A | tp limited by Tvjmax | 5 |
| Collector-emitter breakdown voltage | VBRCES | 650 |  |  | V | IC = 0.2 mA, VGE=0 V | 3 |
| Collector-emitter saturation voltage | VCEsat |  | 1.4 | 1.7 | V | IC = 30 A, VGE = 15 V, Tvj = 25 °C | 3 |
| Collector-emitter saturation voltage | VCEsat |  | 1.65 |  | V | IC = 30 A, VGE = 15 V, Tvj = 175 °C | 3 |
| Gate-emitter threshold voltage | VGEth | 3.2 | 4 | 4.8 | V | IC = 0.3 mA, VCE = VGE | 3 |
| Zero gate-voltage collector current | ICES |  |  | 40 | µA | VCE = 650 V, VGE=0 V, Tvj = 25 °C | 4 |
| Zero gate-voltage collector current | ICES |  |  | 0.5 | mA | VCE = 650 V, VGE=0 V, Tvj = 175 °C | 4 |
| Gate-emitter leakage current | IGES |  |  | 100 | nA | VCE=0 V, VGE = 20 V | 4 |
| Transconductance | gfs |  | 67 |  | S | IC = 30 A, VCE = 20 V | 4 |
| Input capacitance | Cies |  | 3230 |  | pF | VCE = 25 V, VGE=0 V, f = 100 kHz | 4 |
| Output capacitance | Coes |  | 32 |  | pF | VCE = 25 V, VGE=0 V, f = 100 kHz | 4 |
| Reverse transfer capacitance | Cres |  | 13 |  | pF | VCE = 25 V, VGE=0 V, f = 100 kHz | 4 |
| Gate charge | QG |  | 133 |  | nC | IC = 30 A, VGE = 15 V, VCC = 520 V | 4 |
| Diode forward voltage | VF |  | 1.3 | 1.6 | V | IF = 12 A, Tvj = 25 °C | 5 |
| Diode forward voltage | VF |  | 1.35 |  | V | IF = 12 A, Tvj = 175 °C | 5 |
| IGBT thermal resistance, junction to case | Rthjc |  |  | 0.8 | K/W |  | 5 |
| Diode thermal resistance, junction to case | Rthjc |  |  | 3.3 | K/W |  | 5 |
| Thermal resistance, junction-ambient | Rth(j-a) |  |  | 40 | K/W |  | 3 |
| Operating junction temperature (IGBT) | Tvj | -40 |  | 175 | °C |  | 5 |
| Operating junction temperature (diode) | Tvj | -40 |  | 175 | °C |  | 6 |
| Internal emitter inductance | LE |  | 13 |  | nH | measured 5 mm (0.197 in) from case | 3 |
| Turn-on delay time | tdon |  | 41 |  | ns | Tvj = 25 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω | 4 |
| Turn-on delay time | tdon |  | 33 |  | ns | Tvj = 175 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω | 4 |
| Rise time | tr |  | 20 |  | ns | Tvj = 25 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω | 4 |
| Rise time | tr |  | 21 |  | ns | Tvj = 175 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω | 4 |
| Turn-off delay time | tdoff |  | 398 |  | ns | Tvj = 25 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω | 4 |
| Turn-off delay time | tdoff |  | 458 |  | ns | Tvj = 175 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω | 4 |
| Fall time | tf |  | 18 |  | ns | Tvj = 25 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω | 4 |
| Turn-on energy | Eon |  | 0.87 |  | mJ | Tvj = 25 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω | 4 |
| Turn-on energy | Eon |  | 1.04 |  | mJ | Tvj = 175 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω | 4 |
| Turn-off energy | Eoff |  | 0.4 |  | mJ | Tvj = 25 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω | 4 |
| Turn-off energy | Eoff |  | 0.7 |  | mJ | Tvj = 175 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω | 4 |
| Total switching energy | Ets |  | 1.27 |  | mJ | Tvj = 25 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω | 4 |
| Total switching energy | Ets |  | 1.74 |  | mJ | Tvj = 175 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω | 4 |
| Diode reverse recovery charge | Qrr |  | 1.9 |  | µC | VR = 400 V, Tvj = 25 °C, IF = 15 A, -diF/dt = 1400 A/µs | 5 |
| Diode reverse recovery charge | Qrr |  | 2.6 |  | µC | VR = 400 V, Tvj = 175 °C, IF = 15 A, -diF/dt = 1300 A/µs | 5 |
| Diode peak reverse recovery current | Irrm |  | 28.6 |  | A | VR = 400 V, Tvj = 25 °C, IF = 15 A, -diF/dt = 1400 A/µs | 5 |
| Diode peak reverse recovery current | Irrm |  | 39 |  | A | VR = 400 V, Tvj = 175 °C, IF = 15 A, -diF/dt = 1300 A/µs | 5 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts |  | silver | TO-247 HCC, 3Pin 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved. 2 | 1 |

## CAD (KiCad official)

- Symbol: `IKWH30N65WR5XKSA1`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `ikwh30n65wr5xksa1-etched.step` / `ikwh30n65wr5xksa1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ikwh30n65wr5xksa1.step` / `ikwh30n65wr5xksa1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://www.infineon.com/dgdl/Infineon-IKWH30N65WR5-DataSheet-v01_03-EN.pdf?fileId=5546d46279cccfdb0179e545c5487d86) (17 pp, sha256 `3d94c02f6c01edad`, retrieved 2026-10-31, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ikwh30n65wr5xksa1-datasheet.pdf)