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IKWH30N65WR5XKSA1

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Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsikwh30n65wr5xksa1factory-2.0.0extractor-text

Verified IKWH30N65WR5XKSA1

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IKWH30N65WR5XKSA1 · TO-247-3 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 17-page datasheet
  • ✓distributor: lcsc C3171061, digikey 448-IKWH30N65WR5XKSA1-ND, mouser 726-IKWH30N65WR5XKSA
  • ✓family: TO-247-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-4xdasqo3/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ikwh30n65wr5xksa1.kicad_sym✓ ikwh30n65wr5xksa1.kicad_mod✓ ikwh30n65wr5xksa1.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7d ago
viewers ikwh30n65wr5xksa1: viewers · Ray 7d ago
ikwh30n65wr5xksa1-etched.glb Publish 0.1.0 · Ray 7d ago
ikwh30n65wr5xksa1-etched.step ikwh30n65wr5xksa1: factory component page (tier=mfr) · Ray 7d ago
ikwh30n65wr5xksa1-hero.glb ikwh30n65wr5xksa1: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
ikwh30n65wr5xksa1-hero.overlay.json Publish 0.1.0 · Ray 7d ago
ikwh30n65wr5xksa1.glb Publish 0.1.0 · Ray 7d ago
ikwh30n65wr5xksa1.kicad_mod Publish 0.1.0 · Ray 7d ago
ikwh30n65wr5xksa1.kicad_sym Publish 0.1.0 · Ray 7d ago
ikwh30n65wr5xksa1.lbr Publish 0.1.0 · Ray 7d ago
ikwh30n65wr5xksa1.step Publish 0.1.0 · Ray 7d ago
package.json Publish 0.1.0 · Ray 7d ago
page.json Set visibility: public · Ray 7d ago
README.md Publish 0.1.0 · Ray 7d ago
verification.json Verified: Published by the parts factory: tier mfr, 3 pins · Ray 7d ago

IKWH30N65WR5XKSA1

Infineon Technologies · IGBT Transistors / Modules · TO-247-3

IKWH30N65WR5XKSA1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-emitter voltage is rated ±20 V continuous (±30 V transient, tp ≤ 10 µs, D < 0.01), with a threshold VGEth of 3.2 V min, 4 V typ and 4.8 V max at IC = 0.3 mA.
2 C passive Collector (also connected to the mounting tab, whose connection is not stated in the text); collector-emitter voltage is rated 650 V, with DC collector current of 75 A at Tc = 25 °C and 49 A at 100 °C.
3 E passive Emitter, shared with the anode of the integrated antiparallel diode; internal emitter inductance is 13.0 nH measured 5 mm from the case.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCE 650 V Tvj ≥ 25 °C 3
DC collector current IC 75 A Tc = 25 °C 3
DC collector current IC 49 A Tc = 100 °C 3
Pulsed collector current ICpulse 90 A tp limited by Tvjmax 3
Turn-off safe operating area 90 A VCE ≤ 650 V, tp ≤ 1 µs, Tvj ≤ 175 °C 3
Gate-emitter voltage VGE -20 20 V 3
Transient gate-emitter voltage VGE -30 30 V tp ≤ 10 µs, D < 0.01 3
Power dissipation Ptot 190 W Tc = 25 °C 3
Power dissipation Ptot 95 W Tc = 100 °C 3
Storage temperature Tstg -55 150 °C 3
Soldering temperature 260 °C wave soldering 1.6 mm (0.063 in.) from case for 10 s 3
Mounting torque M 0.6 Nm M3 screw, maximum of mounting process: 3 3
Repetitive peak reverse voltage VRRM 650 V Tvj ≥ 25 °C 5
Diode forward current IF 23 A Tc = 25 °C 5
Diode forward current IF 13 A Tc = 100 °C 5
Diode pulsed current IFpulse 45 A tp limited by Tvjmax 5
Collector-emitter breakdown voltage VBRCES 650 V IC = 0.2 mA, VGE=0 V 3
Collector-emitter saturation voltage VCEsat 1.4 1.7 V IC = 30 A, VGE = 15 V, Tvj = 25 °C 3
Collector-emitter saturation voltage VCEsat 1.65 V IC = 30 A, VGE = 15 V, Tvj = 175 °C 3
Gate-emitter threshold voltage VGEth 3.2 4 4.8 V IC = 0.3 mA, VCE = VGE 3
Zero gate-voltage collector current ICES 40 µA VCE = 650 V, VGE=0 V, Tvj = 25 °C 4
Zero gate-voltage collector current ICES 0.5 mA VCE = 650 V, VGE=0 V, Tvj = 175 °C 4
Gate-emitter leakage current IGES 100 nA VCE=0 V, VGE = 20 V 4
Transconductance gfs 67 S IC = 30 A, VCE = 20 V 4
Input capacitance Cies 3230 pF VCE = 25 V, VGE=0 V, f = 100 kHz 4
Output capacitance Coes 32 pF VCE = 25 V, VGE=0 V, f = 100 kHz 4
Reverse transfer capacitance Cres 13 pF VCE = 25 V, VGE=0 V, f = 100 kHz 4
Gate charge QG 133 nC IC = 30 A, VGE = 15 V, VCC = 520 V 4
Diode forward voltage VF 1.3 1.6 V IF = 12 A, Tvj = 25 °C 5
Diode forward voltage VF 1.35 V IF = 12 A, Tvj = 175 °C 5
IGBT thermal resistance, junction to case Rthjc 0.8 K/W 5
Diode thermal resistance, junction to case Rthjc 3.3 K/W 5
Thermal resistance, junction-ambient Rth(j-a) 40 K/W 3
Operating junction temperature (IGBT) Tvj -40 175 °C 5
Operating junction temperature (diode) Tvj -40 175 °C 6
Internal emitter inductance LE 13 nH measured 5 mm (0.197 in) from case 3
Turn-on delay time tdon 41 ns Tvj = 25 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω 4
Turn-on delay time tdon 33 ns Tvj = 175 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω 4
Rise time tr 20 ns Tvj = 25 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω 4
Rise time tr 21 ns Tvj = 175 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω 4
Turn-off delay time tdoff 398 ns Tvj = 25 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω 4
Turn-off delay time tdoff 458 ns Tvj = 175 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω 4
Fall time tf 18 ns Tvj = 25 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω 4
Turn-on energy Eon 0.87 mJ Tvj = 25 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω 4
Turn-on energy Eon 1.04 mJ Tvj = 175 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω 4
Turn-off energy Eoff 0.4 mJ Tvj = 25 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω 4
Turn-off energy Eoff 0.7 mJ Tvj = 175 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω 4
Total switching energy Ets 1.27 mJ Tvj = 25 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω 4
Total switching energy Ets 1.74 mJ Tvj = 175 °C, IC = 30 A, VCC = 400 V, VGE = 0/15 V, RGon = 27 Ω, RGoff = 27 Ω 4
Diode reverse recovery charge Qrr 1.9 µC VR = 400 V, Tvj = 25 °C, IF = 15 A, -diF/dt = 1400 A/µs 5
Diode reverse recovery charge Qrr 2.6 µC VR = 400 V, Tvj = 175 °C, IF = 15 A, -diF/dt = 1300 A/µs 5
Diode peak reverse recovery current Irrm 28.6 A VR = 400 V, Tvj = 25 °C, IF = 15 A, -diF/dt = 1400 A/µs 5
Diode peak reverse recovery current Irrm 39 A VR = 400 V, Tvj = 175 °C, IF = 15 A, -diF/dt = 1300 A/µs 5

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts silver TO-247 HCC, 3Pin 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved. 2 1

CAD (KiCad official)

  • Symbol: IKWH30N65WR5XKSA1
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ikwh30n65wr5xksa1-etched.step / ikwh30n65wr5xksa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikwh30n65wr5xksa1.step / ikwh30n65wr5xksa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (17 pp, sha256 3d94c02f6c01edad, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF