IKW75N65RH5XKSA1

{
  "schema_version": 1,
  "type": "component",
  "slug": "ikw75n65rh5xksa1",
  "title": "IKW75N65RH5XKSA1",
  "brief": "Infineon Technologies IGBTs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "triode-mos tube-transistor",
    "ikw75n65rh5xksa1",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "IKW75N65RH5XKSA1",
    "manufacturer": "Infineon Technologies",
    "package": "TO-247-3",
    "pin_count": 3,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "IGBTs",
    "datasheet": "https://www.infineon.com/dgdl/Infineon-IKW75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc281ce931ac",
    "parts": {
      "symbol": "ikw75n65rh5xksa1.kicad_sym",
      "footprint": "ikw75n65rh5xksa1.kicad_mod",
      "model_3d": "ikw75n65rh5xksa1-hero.glb",
      "model_3d_plain": "ikw75n65rh5xksa1-etched.glb",
      "model_3d_step": "ikw75n65rh5xksa1-etched.step",
      "model_3d_step_plain": "ikw75n65rh5xksa1.step",
      "lbr": "ikw75n65rh5xksa1.lbr"
    },
    "distributor_links": {
      "lcsc": "C3199289",
      "digikey": "448-IKW75N65RH5XKSA1-ND",
      "mouser": "726-IKW75N65RH5XKSA1"
    },
    "distributor_check": {
      "checked_at": "2026-10-29T02:37:59Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "448-IKW75N65RH5XKSA1-ND",
        "status": "found"
      },
      "mouser": {
        "pn": "726-IKW75N65RH5XKSA1",
        "status": "found",
        "lifecycle": "Not Recommended for New Designs"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate of the TRENCHSTOP 5 H5 IGBT; gate-emitter voltage is limited to ±20 V, with transients up to ±30 V for tp ≤ 10 µs and D < 0.01."
      },
      {
        "number": "2",
        "name": "C",
        "type": "passive",
        "description": "Collector, also connected to the package backside; rated VCE 650 V and DC collector current 80 A at Tc = 25 °C (limited by bondwire), 75 A at Tc = 100 °C."
      },
      {
        "number": "3",
        "name": "E",
        "type": "passive",
        "description": "Emitter of the IGBT; internal emitter inductance LE is 13.0 nH measured 5 mm from the case."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The datasheet names the pins by function only (Pin G - gate, Pin C & backside - collector, Pin E - e; Pin types are KiCad-style judgments: gate set to input, collector and emitter set to passive, since "
        ],
        "pages_sent": 16,
        "cost_usd": 0.0471,
        "at": "2026-10-29T02:37:48"
      },
      "datasheet": {
        "url": "https://www.infineon.com/dgdl/Infineon-IKW75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc281ce931ac",
        "pages": 16,
        "sha256": "d9aa3ee15e936451",
        "source_tier": "mfr"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
      {
        "file": "ikw75n65rh5xksa1.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
          15.9,
          5.03,
          41.1
        ],
        "zmin_mm": -15.83,
        "centre_offset_mm": 0.185,
        "footprint_binding": "identity",
        "sha256": "ec0db59b04bcea2e0db6f976bf3ab8644e761c8b0059239f77f4febd6dc9eff4",
        "checked": "2026-10-29",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "ikw75n65rh5xksa1-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
          15.9,
          5.03,
          41.1
        ],
        "zmin_mm": -15.83,
        "centre_offset_mm": 0.185,
        "footprint_binding": "identity",
        "sha256": "fb1326a8c4538f1e8938e58a2360f44d9d3d2437e7b97641877a8c9cb4d6a98b",
        "checked": "2026-10-29",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ],
    "package_dims": {
      "package_code": "PG-TO247-3",
      "source_page": 13,
      "e": {
        "nom_mm": 5.44,
        "range_mm": [
          null,
          null
        ]
      },
      "source": "datasheet package drawing, every number found on its page (extract_pins --task dims)",
      "model_check": {
        "file": "ikw75n65rh5xksa1.step",
        "verdict": "SKIP",
        "reasons": [
          "the datasheet dimensions give no height or body size to compare"
        ],
        "by": "factory/package_fit.py"
      }
    }
  },
  "metadata": {
    "specs": {
      "Manufacturer": "Infineon Technologies",
      "Package": "TO-247-3",
      "Category": "Triode/MOS Tube/Transistor",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "d9aa3ee15e936451c6cfa872cc164f034564b5d8ddd093c5b0aaf97884c13d4b",
      "rows": [
        {
          "name": "Storage temperature",
          "symbol": "Tstg",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Soldering temperature",
          "symbol": "",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": null,
          "typ": null,
          "max": 260,
          "conditions": "wave soldering 1.6 mm (0.063 in.) from case for 10 s",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Mounting torque",
          "symbol": "M",
          "kind": "absolute_maximum",
          "unit": "Nm",
          "min": null,
          "typ": null,
          "max": 0.6,
          "conditions": "M3 screw; maximum of mounting process: 3",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction-ambient",
          "symbol": "Rth(j-a)",
          "kind": "thermal",
          "unit": "K/W",
          "min": null,
          "typ": null,
          "max": 40,
          "conditions": "",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Collector-emitter voltage",
          "symbol": "VCE",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 650,
          "conditions": "Tvj ≥ 25 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "DC collector current",
          "symbol": "IC",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 80,
          "conditions": "IC limited by bondwire; Tc = 25 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "DC collector current",
          "symbol": "IC",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 75,
          "conditions": "limited by Tvjmax; Tc = 100 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Pulsed collector current",
          "symbol": "ICpulse",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 300,
          "conditions": "tp limited by Tvjmax",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Turn-off safe operating area",
          "symbol": "",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 300,
          "conditions": "VCE ≤ 650 V, tp = 1 µs, Tvj ≤ 175 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate-emitter voltage",
          "symbol": "VGE",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Transient gate-emitter voltage",
          "symbol": "VGE",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -30,
          "typ": null,
          "max": 30,
          "conditions": "tp ≤ 10 µs, D < 0.01",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Power dissipation",
          "symbol": "Ptot",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 395,
          "conditions": "Tc = 25 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Power dissipation",
          "symbol": "Ptot",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 198,
          "conditions": "Tc = 100 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Collector-emitter saturation voltage",
          "symbol": "VCEsat",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 1.65,
          "max": 2.1,
          "conditions": "IC = 75 A, VGE = 15 V, Tvj = 25 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate-emitter threshold voltage",
          "symbol": "VGEth",
          "kind": "electrical",
          "unit": "V",
          "min": 3.2,
          "typ": 4,
          "max": 4.8,
          "conditions": "IC = 0.75 mA, VCE = VGE",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Zero gate-voltage collector current",
          "symbol": "ICES",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 1000,
          "conditions": "VCE = 650 V, VGE = 0 V, Tvj = 25 °C",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Zero gate-voltage collector current",
          "symbol": "ICES",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 2500,
          "conditions": "VCE = 650 V, VGE = 0 V, Tvj = 175 °C",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Zero gate-voltage collector current",
          "symbol": "ICES",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 30,
          "conditions": "VCE = 480 V, VGE = 0 V, Tvj = 25 °C",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Gate-emitter leakage current",
          "symbol": "IGES",
          "kind": "electrical",
          "unit": "nA",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "VCE = 0 V, VGE = 20 V",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "IGBT thermal resistance, junction-case",
          "symbol": "Rth(j-c)",
          "kind": "thermal",
          "unit": "K/W",
          "min": null,
          "typ": null,
          "max": 0.38,
          "conditions": "",
          "source_page": 5,
          "source": "datasheet"
        },
        {
          "name": "Operating junction temperature",
          "symbol": "Tvj",
          "kind": "thermal",
          "unit": "°C",
          "min": -40,
          "typ": null,
          "max": 175,
          "conditions": "",
          "source_page": 5,
          "source": "datasheet"
        },
        {
          "name": "Repetitive peak reverse voltage",
          "symbol": "VRRM",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 650,
          "conditions": "Tvj ≥ 25 °C",
          "source_page": 6,
          "source": "datasheet"
        },
        {
          "name": "Diode forward current",
          "symbol": "IF",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 45.7,
          "conditions": "limited by Tvjmax; Tc = 25 °C",
          "source_page": 6,
          "source": "datasheet"
        },
        {
          "name": "Diode forward current",
          "symbol": "IF",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 30.7,
          "conditions": "limited by Tvjmax; Tc = 100 °C",
          "source_page": 6,
          "source": "datasheet"
        },
        {
          "name": "Diode pulsed current",
          "symbol": "IFpulse",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 112.5,
          "conditions": "tp limited by Tvjmax; pulse current level depends on Tvj of diode chip",
          "source_page": 6,
          "source": "datasheet"
        },
        {
          "name": "Diode forward voltage",
          "symbol": "VF",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 1.35,
          "max": 1.5,
          "conditions": "IF = 30 A, Tvj = 25 °C",
          "source_page": 6,
          "source": "datasheet"
        },
        {
          "name": "Diode thermal resistance, junction-case",
          "symbol": "Rth(j-c)",
          "kind": "thermal",
          "unit": "K/W",
          "min": null,
          "typ": null,
          "max": 1.2,
          "conditions": "",
          "source_page": 6,
          "source": "datasheet"
        },
        {
          "name": "Operating junction temperature (diode)",
          "symbol": "Tvj",
          "kind": "thermal",
          "unit": "°C",
          "min": -40,
          "typ": null,
          "max": 175,
          "conditions": "",
          "source_page": 6,
          "source": "datasheet"
        }
      ]
    }
  },
  "variants": [],
  "sections": [
    "hero",
    "viewers",
    "readme",
    "breadcrumbs",
    "info"
  ],
  "discovery_triggers": [
    "ikw75n65rh5xksa1"
  ],
  "discovery_pitch": "IKW75N65RH5XKSA1 (Infineon Technologies) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
    "page.json",
    "README.md",
    "ikw75n65rh5xksa1.kicad_sym",
    "ikw75n65rh5xksa1.kicad_mod",
    "ikw75n65rh5xksa1.glb",
    "ikw75n65rh5xksa1.step",
    "ikw75n65rh5xksa1.lbr",
    "docs/hero.png",
    "docs/ikw75n65rh5xksa1-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html",
    "ikw75n65rh5xksa1-hero.glb",
    "ikw75n65rh5xksa1-hero.overlay.json",
    "ikw75n65rh5xksa1-etched.glb"
  ],
  "visibility": {
    "public": true
  }
}