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IKW75N65RH5XKSA1
Public Made by Adomby adom
Infineon Technologies IGBTs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIKW75N65RH5XKSA1
Infineon Technologies · IGBTs · TO-247-3
IKW75N65RH5XKSA1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the TRENCHSTOP 5 H5 IGBT; gate-emitter voltage is limited to ±20 V, with transients up to ±30 V for tp ≤ 10 µs and D < 0.01. |
| 2 | C | passive | Collector, also connected to the package backside; rated VCE 650 V and DC collector current 80 A at Tc = 25 °C (limited by bondwire), 75 A at Tc = 100 °C. |
| 3 | E | passive | Emitter of the IGBT; internal emitter inductance LE is 13.0 nH measured 5 mm from the case. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Soldering temperature | 260 | °C | wave soldering 1.6 mm (0.063 in.) from case for 10 s | 3 | |||
| Mounting torque | M | 0.6 | Nm | M3 screw; maximum of mounting process: 3 | 3 | ||
| Thermal resistance, junction-ambient | Rth(j-a) | 40 | K/W | 3 | |||
| Collector-emitter voltage | VCE | 650 | V | Tvj ≥ 25 °C | 3 | ||
| DC collector current | IC | 80 | A | IC limited by bondwire; Tc = 25 °C | 3 | ||
| DC collector current | IC | 75 | A | limited by Tvjmax; Tc = 100 °C | 3 | ||
| Pulsed collector current | ICpulse | 300 | A | tp limited by Tvjmax | 3 | ||
| Turn-off safe operating area | 300 | A | VCE ≤ 650 V, tp = 1 µs, Tvj ≤ 175 °C | 3 | |||
| Gate-emitter voltage | VGE | -20 | 20 | V | 3 | ||
| Transient gate-emitter voltage | VGE | -30 | 30 | V | tp ≤ 10 µs, D < 0.01 | 3 | |
| Power dissipation | Ptot | 395 | W | Tc = 25 °C | 3 | ||
| Power dissipation | Ptot | 198 | W | Tc = 100 °C | 3 | ||
| Collector-emitter saturation voltage | VCEsat | 1.65 | 2.1 | V | IC = 75 A, VGE = 15 V, Tvj = 25 °C | 3 | |
| Gate-emitter threshold voltage | VGEth | 3.2 | 4 | 4.8 | V | IC = 0.75 mA, VCE = VGE | 3 |
| Zero gate-voltage collector current | ICES | 1000 | µA | VCE = 650 V, VGE = 0 V, Tvj = 25 °C | 4 | ||
| Zero gate-voltage collector current | ICES | 2500 | µA | VCE = 650 V, VGE = 0 V, Tvj = 175 °C | 4 | ||
| Zero gate-voltage collector current | ICES | 30 | µA | VCE = 480 V, VGE = 0 V, Tvj = 25 °C | 4 | ||
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0 V, VGE = 20 V | 4 | ||
| IGBT thermal resistance, junction-case | Rth(j-c) | 0.38 | K/W | 5 | |||
| Operating junction temperature | Tvj | -40 | 175 | °C | 5 | ||
| Repetitive peak reverse voltage | VRRM | 650 | V | Tvj ≥ 25 °C | 6 | ||
| Diode forward current | IF | 45.7 | A | limited by Tvjmax; Tc = 25 °C | 6 | ||
| Diode forward current | IF | 30.7 | A | limited by Tvjmax; Tc = 100 °C | 6 | ||
| Diode pulsed current | IFpulse | 112.5 | A | tp limited by Tvjmax; pulse current level depends on Tvj of diode chip | 6 | ||
| Diode forward voltage | VF | 1.35 | 1.5 | V | IF = 30 A, Tvj = 25 °C | 6 | |
| Diode thermal resistance, junction-case | Rth(j-c) | 1.2 | K/W | 6 | |||
| Operating junction temperature (diode) | Tvj | -40 | 175 | °C | 6 |
CAD (KiCad official)
- Symbol:
IKW75N65RH5XKSA1 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
ikw75n65rh5xksa1-etched.step/ikw75n65rh5xksa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ikw75n65rh5xksa1.step/ikw75n65rh5xksa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (16 pp, sha256
d9aa3ee15e936451, retrieved 2026-10-29, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).