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IKW50N60DTP
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Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IKW50N60DTP
Infineon Technologies · IGBT Transistors / Modules · TO-247-3
IKW50N60DTP from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive voltage limited to ±20 V gate-emitter, with threshold VGE(th) of 4.1 V min to 5.7 V max at IC=0.80 mA. |
| 2 | C | passive | Collector (also connected to the mounting tab); collector-emitter voltage up to 600 V and DC collector current 80 A at TC=25°C (61 A at TC=100°C). |
| 3 | E | passive | Emitter, shared with the anti-parallel diode anode; diode forward current is 62 A at TC=25°C (39 A at TC=100°C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCE | 600 | V | Tvj ≥25°C | 4 | ||
| DC collector current, TC=25°C (limited by bondwire) | IC | 80 | A | TC=25°C, limited by Tvjmax | 4 | ||
| DC collector current, TC=100°C | IC | 61 | A | TC=100°C, limited by Tvjmax | 4 | ||
| Pulsed collector current | ICpuls | 150 | A | tp limited by Tvjmax | 4 | ||
| Turn off safe operating area | 150 | A | VCE ≤600V, Tvj ≤175°C, tp=1µs | 4 | |||
| Diode forward current, TC=25°C | IF | 62 | A | TC=25°C, limited by Tvjmax | 4 | ||
| Diode forward current, TC=100°C | IF | 39 | A | TC=100°C, limited by Tvjmax | 4 | ||
| Diode pulsed current | IFpuls | 150 | A | tp limited by Tvjmax | 4 | ||
| Gate-emitter voltage | VGE | -20 | 20 | V | 4 | ||
| Short circuit withstand time | tSC | 5 | µs | VGE=15.0V, VCC ≤400V, Tvj=150°C, allowed number of short circuits <1000, time between short circuits ≥1.0s | 4 | ||
| Power dissipation, TC=25°C | Ptot | 319.2 | W | TC=25°C | 4 | ||
| Power dissipation, TC=100°C | Ptot | 159.6 | W | TC=100°C | 4 | ||
| Operating junction temperature | Tvj | -40 | 175 | °C | 4 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 4 | ||
| Soldering temperature | 260 | °C | wave soldering 1.6mm (0.063in.) from case for 10s | 4 | |||
| Mounting torque | M | 0.6 | Nm | M3 screw; maximum of mounting processes: 3 | 4 | ||
| IGBT thermal resistance, junction-case | Rth(j-c) | 0.36 | 0.47 | K/W | 4 | ||
| Diode thermal resistance, junction-case | Rth(j-c) | 0.62 | 0.95 | K/W | 4 | ||
| Collector-emitter breakdown voltage | V(BR)CES | 600 | V | VGE=0V, IC=0.20mA | 5 | ||
| Collector-emitter saturation voltage, Tvj=25°C | VCEsat | 1.6 | 1.8 | V | VGE=15.0V, IC=50.0A, Tvj=25°C | 5 | |
| Diode forward voltage, Tvj=25°C | VF | 1.45 | 1.7 | V | VGE=0V, IF=30.0A, Tvj=25°C | 5 | |
| Gate-emitter threshold voltage | VGE(th) | 4.1 | 5.1 | 5.7 | V | IC=0.80mA, VCE=VGE | 5 |
| Zero gate voltage collector current, Tvj=25°C | ICES | 40 | µA | VCE=600V, VGE=0V, Tvj=25°C | 5 | ||
| Gate-emitter leakage current | IGES | 100 | nA | VCE=0V, VGE=20V | 5 |
CAD (KiCad official)
- Symbol:
IKW50N60DTP - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
ikw50n60dtp-etched.step/ikw50n60dtp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ikw50n60dtp.step/ikw50n60dtp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (16 pp, sha256
9456f7c5c35a92d7, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IKW50N60DTP
**Infineon Technologies** · IGBT Transistors / Modules · TO-247-3
IKW50N60DTP from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive voltage limited to ±20 V gate-emitter, with threshold VGE(th) of 4.1 V min to 5.7 V max at IC=0.80 mA. |
| 2 | C | passive | Collector (also connected to the mounting tab); collector-emitter voltage up to 600 V and DC collector current 80 A at TC=25°C (61 A at TC=100°C). |
| 3 | E | passive | Emitter, shared with the anti-parallel diode anode; diode forward current is 62 A at TC=25°C (39 A at TC=100°C). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCE | | | 600 | V | Tvj ≥25°C | 4 |
| DC collector current, TC=25°C (limited by bondwire) | IC | | | 80 | A | TC=25°C, limited by Tvjmax | 4 |
| DC collector current, TC=100°C | IC | | | 61 | A | TC=100°C, limited by Tvjmax | 4 |
| Pulsed collector current | ICpuls | | | 150 | A | tp limited by Tvjmax | 4 |
| Turn off safe operating area | | | | 150 | A | VCE ≤600V, Tvj ≤175°C, tp=1µs | 4 |
| Diode forward current, TC=25°C | IF | | | 62 | A | TC=25°C, limited by Tvjmax | 4 |
| Diode forward current, TC=100°C | IF | | | 39 | A | TC=100°C, limited by Tvjmax | 4 |
| Diode pulsed current | IFpuls | | | 150 | A | tp limited by Tvjmax | 4 |
| Gate-emitter voltage | VGE | -20 | | 20 | V | | 4 |
| Short circuit withstand time | tSC | | | 5 | µs | VGE=15.0V, VCC ≤400V, Tvj=150°C, allowed number of short circuits <1000, time between short circuits ≥1.0s | 4 |
| Power dissipation, TC=25°C | Ptot | | | 319.2 | W | TC=25°C | 4 |
| Power dissipation, TC=100°C | Ptot | | | 159.6 | W | TC=100°C | 4 |
| Operating junction temperature | Tvj | -40 | | 175 | °C | | 4 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 4 |
| Soldering temperature | | | | 260 | °C | wave soldering 1.6mm (0.063in.) from case for 10s | 4 |
| Mounting torque | M | | | 0.6 | Nm | M3 screw; maximum of mounting processes: 3 | 4 |
| IGBT thermal resistance, junction-case | Rth(j-c) | | 0.36 | 0.47 | K/W | | 4 |
| Diode thermal resistance, junction-case | Rth(j-c) | | 0.62 | 0.95 | K/W | | 4 |
| Collector-emitter breakdown voltage | V(BR)CES | 600 | | | V | VGE=0V, IC=0.20mA | 5 |
| Collector-emitter saturation voltage, Tvj=25°C | VCEsat | | 1.6 | 1.8 | V | VGE=15.0V, IC=50.0A, Tvj=25°C | 5 |
| Diode forward voltage, Tvj=25°C | VF | | 1.45 | 1.7 | V | VGE=0V, IF=30.0A, Tvj=25°C | 5 |
| Gate-emitter threshold voltage | VGE(th) | 4.1 | 5.1 | 5.7 | V | IC=0.80mA, VCE=VGE | 5 |
| Zero gate voltage collector current, Tvj=25°C | ICES | | | 40 | µA | VCE=600V, VGE=0V, Tvj=25°C | 5 |
| Gate-emitter leakage current | IGES | | | 100 | nA | VCE=0V, VGE=20V | 5 |
## CAD (KiCad official)
- Symbol: `IKW50N60DTP`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `ikw50n60dtp-etched.step` / `ikw50n60dtp-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ikw50n60dtp.step` / `ikw50n60dtp.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588894897051353088) (16 pp, sha256 `9456f7c5c35a92d7`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ikw50n60dtp-datasheet.pdf)