component

IKW50N60DTP

Public Made by Adom

by adom

Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsikw50n60dtpfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers ikw50n60dtp: viewers · Ray 17d ago
ikw50n60dtp-etched.glb Publish 0.1.0 · Ray 17d ago
ikw50n60dtp-etched.step ikw50n60dtp: factory component page (tier=lcsc) · Ray 17d ago
ikw50n60dtp-hero.glb ikw50n60dtp: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
ikw50n60dtp-hero.overlay.json Publish 0.1.0 · Ray 17d ago
ikw50n60dtp.glb Publish 0.1.0 · Ray 17d ago
ikw50n60dtp.kicad_mod Publish 0.1.0 · Ray 17d ago
ikw50n60dtp.kicad_sym Publish 0.1.0 · Ray 17d ago
ikw50n60dtp.lbr Publish 0.1.0 · Ray 17d ago
ikw50n60dtp.step Publish 0.1.0 · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago

IKW50N60DTP

Infineon Technologies · IGBT Transistors / Modules · TO-247-3

IKW50N60DTP from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive voltage limited to ±20 V gate-emitter, with threshold VGE(th) of 4.1 V min to 5.7 V max at IC=0.80 mA.
2 C passive Collector (also connected to the mounting tab); collector-emitter voltage up to 600 V and DC collector current 80 A at TC=25°C (61 A at TC=100°C).
3 E passive Emitter, shared with the anti-parallel diode anode; diode forward current is 62 A at TC=25°C (39 A at TC=100°C).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCE 600 V Tvj ≥25°C 4
DC collector current, TC=25°C (limited by bondwire) IC 80 A TC=25°C, limited by Tvjmax 4
DC collector current, TC=100°C IC 61 A TC=100°C, limited by Tvjmax 4
Pulsed collector current ICpuls 150 A tp limited by Tvjmax 4
Turn off safe operating area 150 A VCE ≤600V, Tvj ≤175°C, tp=1µs 4
Diode forward current, TC=25°C IF 62 A TC=25°C, limited by Tvjmax 4
Diode forward current, TC=100°C IF 39 A TC=100°C, limited by Tvjmax 4
Diode pulsed current IFpuls 150 A tp limited by Tvjmax 4
Gate-emitter voltage VGE -20 20 V 4
Short circuit withstand time tSC 5 µs VGE=15.0V, VCC ≤400V, Tvj=150°C, allowed number of short circuits <1000, time between short circuits ≥1.0s 4
Power dissipation, TC=25°C Ptot 319.2 W TC=25°C 4
Power dissipation, TC=100°C Ptot 159.6 W TC=100°C 4
Operating junction temperature Tvj -40 175 °C 4
Storage temperature Tstg -55 150 °C 4
Soldering temperature 260 °C wave soldering 1.6mm (0.063in.) from case for 10s 4
Mounting torque M 0.6 Nm M3 screw; maximum of mounting processes: 3 4
IGBT thermal resistance, junction-case Rth(j-c) 0.36 0.47 K/W 4
Diode thermal resistance, junction-case Rth(j-c) 0.62 0.95 K/W 4
Collector-emitter breakdown voltage V(BR)CES 600 V VGE=0V, IC=0.20mA 5
Collector-emitter saturation voltage, Tvj=25°C VCEsat 1.6 1.8 V VGE=15.0V, IC=50.0A, Tvj=25°C 5
Diode forward voltage, Tvj=25°C VF 1.45 1.7 V VGE=0V, IF=30.0A, Tvj=25°C 5
Gate-emitter threshold voltage VGE(th) 4.1 5.1 5.7 V IC=0.80mA, VCE=VGE 5
Zero gate voltage collector current, Tvj=25°C ICES 40 µA VCE=600V, VGE=0V, Tvj=25°C 5
Gate-emitter leakage current IGES 100 nA VCE=0V, VGE=20V 5

CAD (KiCad official)

  • Symbol: IKW50N60DTP
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ikw50n60dtp-etched.step / ikw50n60dtp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikw50n60dtp.step / ikw50n60dtp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (16 pp, sha256 9456f7c5c35a92d7, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF