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IKW40N120CS6

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Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IKW40N120CS6

Infineon Technologies · IGBT Transistors / Modules · TO-247-3

IKW40N120CS6 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-emitter voltage limited to ±20 V (25 V transient for tp ≤0.5 µs), with threshold VGE(th) 5.1 to 6.3 V at IC=1.90 mA.
2 C passive Collector terminal, also connected to the tab; collector-emitter voltage up to 1200 V and DC collector current 40 A at Tc=100°C.
3 E passive Emitter terminal, which is also the anode of the anti-parallel diode; diode forward current is 40 A at Tc=100°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCE 1200 V Tvj ≥25°C 3
DC collector current IC 80 A Tc=25°C 3
DC collector current IC 40 A Tc=100°C 3
Pulsed collector current ICpuls 160 A tp limited by Tvj max 3
Turnoff safe operating area 160 A VCE ≤1200V, Tvj ≤175°C 3
Diode forward current IF 80 A Tc=25°C 3
Diode forward current IF 40 A Tc=100°C 3
Diode pulsed current IFpuls 160 A tp limited by Tvj max 3
Gate-emitter voltage VGE -20 20 V 3
Transient gate-emitter voltage VGE 25 V tp ≤0.5µs, D<0.001 3
Short circuit withstand time tSC 3 µs VGE=15.0V, VCC ≤500V, Tvj=150°C 3
Power dissipation Ptot 500 W Tc=25°C 3
Power dissipation Ptot 250 W Tc=100°C 3
Operating junction temperature Tvj -40 175 °C 3
Storage temperature Tstg -55 150 °C 3
Soldering temperature 260 °C wave soldering 1.6mm from case for 10s 3
Mounting torque M 0.6 Nm M3 screw; maximum of mounting processes: 3 3
IGBT thermal resistance, junction-case Rth(j-c) 0.3 K/W 3
Diode thermal resistance, junction-case Rth(j-c) 0.78 K/W 3
Thermal resistance junction-ambient Rth(j-a) 40 K/W 3
Collector-emitter saturation voltage VCEsat 1.85 2.15 V VGE=15.0V, IC=40.0A, Tvj=25°C 4
Diode forward voltage VF 2.2 2.55 V VGE=0V, IF=40.0A, Tvj=25°C 4
Gate-emitter threshold voltage VGE(th) 5.1 5.7 6.3 V IC=1.90mA, VCE=VGE 4
Gate-emitter leakage current IGES 600 nA VCE=0V, VGE=20V 4

CAD (KiCad official)

  • Symbol: IKW40N120CS6
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ikw40n120cs6-etched.step / ikw40n120cs6-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikw40n120cs6.step / ikw40n120cs6.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (16 pp, sha256 7f3ae47e7fdda60f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF