component
IKW40N120CS6
Public Made by Adomby adom
Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIKW40N120CS6
Infineon Technologies · IGBT Transistors / Modules · TO-247-3
IKW40N120CS6 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-emitter voltage limited to ±20 V (25 V transient for tp ≤0.5 µs), with threshold VGE(th) 5.1 to 6.3 V at IC=1.90 mA. |
| 2 | C | passive | Collector terminal, also connected to the tab; collector-emitter voltage up to 1200 V and DC collector current 40 A at Tc=100°C. |
| 3 | E | passive | Emitter terminal, which is also the anode of the anti-parallel diode; diode forward current is 40 A at Tc=100°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCE | 1200 | V | Tvj ≥25°C | 3 | ||
| DC collector current | IC | 80 | A | Tc=25°C | 3 | ||
| DC collector current | IC | 40 | A | Tc=100°C | 3 | ||
| Pulsed collector current | ICpuls | 160 | A | tp limited by Tvj max | 3 | ||
| Turnoff safe operating area | 160 | A | VCE ≤1200V, Tvj ≤175°C | 3 | |||
| Diode forward current | IF | 80 | A | Tc=25°C | 3 | ||
| Diode forward current | IF | 40 | A | Tc=100°C | 3 | ||
| Diode pulsed current | IFpuls | 160 | A | tp limited by Tvj max | 3 | ||
| Gate-emitter voltage | VGE | -20 | 20 | V | 3 | ||
| Transient gate-emitter voltage | VGE | 25 | V | tp ≤0.5µs, D<0.001 | 3 | ||
| Short circuit withstand time | tSC | 3 | µs | VGE=15.0V, VCC ≤500V, Tvj=150°C | 3 | ||
| Power dissipation | Ptot | 500 | W | Tc=25°C | 3 | ||
| Power dissipation | Ptot | 250 | W | Tc=100°C | 3 | ||
| Operating junction temperature | Tvj | -40 | 175 | °C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Soldering temperature | 260 | °C | wave soldering 1.6mm from case for 10s | 3 | |||
| Mounting torque | M | 0.6 | Nm | M3 screw; maximum of mounting processes: 3 | 3 | ||
| IGBT thermal resistance, junction-case | Rth(j-c) | 0.3 | K/W | 3 | |||
| Diode thermal resistance, junction-case | Rth(j-c) | 0.78 | K/W | 3 | |||
| Thermal resistance junction-ambient | Rth(j-a) | 40 | K/W | 3 | |||
| Collector-emitter saturation voltage | VCEsat | 1.85 | 2.15 | V | VGE=15.0V, IC=40.0A, Tvj=25°C | 4 | |
| Diode forward voltage | VF | 2.2 | 2.55 | V | VGE=0V, IF=40.0A, Tvj=25°C | 4 | |
| Gate-emitter threshold voltage | VGE(th) | 5.1 | 5.7 | 6.3 | V | IC=1.90mA, VCE=VGE | 4 |
| Gate-emitter leakage current | IGES | 600 | nA | VCE=0V, VGE=20V | 4 |
CAD (KiCad official)
- Symbol:
IKW40N120CS6 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
ikw40n120cs6-etched.step/ikw40n120cs6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ikw40n120cs6.step/ikw40n120cs6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (16 pp, sha256
7f3ae47e7fdda60f, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).