component
IKW25N120H3
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Infineon Technologies IGBTs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IKW25N120H3
Infineon Technologies · IGBTs · TO-247-3
IKW25N120H3 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-emitter voltage limited to ±20 V, with threshold VGE(th) 5.0 to 6.5 V at IC=0.85 mA. |
| 2 | C | passive | Collector (also connected to the mounting tab); collector-emitter voltage 1200 V max, DC collector current 50 A at TC=25°C and 25 A at TC=100°C. |
| 3 | E | passive | Emitter; carries the IGBT collector current and the anti-parallel diode forward current of 25 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CES | 1200 | V | VGE=0V, IC=0.50mA, Tvj=25°C | 5 | ||
| Collector-emitter saturation voltage | VCEsat | 2.05 | 2.4 | V | VGE=15.0V, IC=25.0A, Tvj=25°C | 5 | |
| Collector-emitter saturation voltage | VCEsat | 2.5 | V | VGE=15.0V, IC=25.0A, Tvj=125°C | 5 | ||
| Collector-emitter saturation voltage | VCEsat | 2.7 | V | VGE=15.0V, IC=25.0A, Tvj=175°C | 5 | ||
| Diode forward voltage | VF | 1.8 | 2.35 | V | VGE=0V, IF=12.5A, Tvj=25°C | 5 | |
| Diode forward voltage | VF | 1.85 | V | VGE=0V, IF=12.5A, Tvj=175°C | 5 | ||
| Diode forward voltage | VF | 2.4 | 3.05 | V | VGE=0V, IF=25.0A, Tvj=25°C | 5 | |
| Diode forward voltage | VF | 2.6 | V | VGE=0V, IF=25.0A, Tvj=125°C | 5 | ||
| Gate-emitter threshold voltage | VGE(th) | 5 | 5.8 | 6.5 | V | IC=0.85mA, VCE=VGE | 5 |
| Zero gate voltage collector current | ICES | 250 | µA | VCE=1200V, VGE=0V, Tvj=25°C | 5 | ||
| Zero gate voltage collector current | ICES | 2500 | µA | VCE=1200V, VGE=0V, Tvj=175°C | 5 | ||
| Gate-emitter leakage current | IGES | 600 | nA | VCE=0V, VGE=20V | 5 | ||
| Collector-emitter voltage | VCE | 1200 | V | 4 | |||
| DC collector current | IC | 50 | A | TC=25°C, limited by Tvjmax | 4 | ||
| DC collector current | IC | 25 | A | TC=100°C, limited by Tvjmax | 4 | ||
| Pulsed collector current | ICpuls | 100 | A | tp limited by Tvjmax | 4 | ||
| Turn off safe operating area | 100 | A | VCE ≤1200V, Tvj ≤175°C | 4 | |||
| Diode forward current | IF | 25 | A | TC=25°C, limited by Tvjmax | 4 | ||
| Diode forward current | IF | 12.5 | A | TC=100°C, limited by Tvjmax | 4 | ||
| Diode pulsed current | IFpuls | 100 | A | tp limited by Tvjmax | 4 | ||
| Gate-emitter voltage | VGE | -20 | 20 | V | 4 | ||
| Short circuit withstand time | tSC | 10 | µs | VGE=15.0V, VCC ≤600V, Tvj=175°C, <1000 short circuits, ≥1.0s between | 4 | ||
| Power dissipation | Ptot | 326 | W | TC=25°C | 4 | ||
| Power dissipation | Ptot | 156 | W | TC=100°C | 4 | ||
| Operating junction temperature | Tvj | -40 | 175 | °C | 4 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 4 | ||
| Soldering temperature | 260 | °C | wave soldering 1.6mm (0.063in.) from case for 10s | 4 | |||
| Mounting torque | M | 0.6 | Nm | M3 screw, max 3 mounting processes | 4 | ||
| IGBT thermal resistance, junction-case | Rth(j-c) | 0.46 | K/W | 4 | |||
| Diode thermal resistance, junction-case | Rth(j-c) | 1.49 | K/W | 4 | |||
| Thermal resistance junction-ambient | Rth(j-a) | 40 | K/W | 4 | |||
| Transconductance | gfs | 13 | S | VCE=20V, IC=25.0A | 5 | ||
| Input capacitance | Cies | 1430 | pF | VCE=25V, VGE=0V, f=1MHz | 5 | ||
| Output capacitance | Coes | 115 | pF | VCE=25V, VGE=0V, f=1MHz | 5 | ||
| Reverse transfer capacitance | Cres | 75 | pF | VCE=25V, VGE=0V, f=1MHz | 5 | ||
| Gate charge | QG | 115 | nC | VCC=960V, IC=25.0A, VGE=15V | 5 | ||
| Internal emitter inductance | LE | 13 | nH | measured 5mm (0.197 in.) from case | 5 | ||
| Short circuit collector current | IC(SC) | 87 | A | VGE=15.0V, VCC ≤600V, tSC ≤10µs, Tvj=175°C | 5 | ||
| Turn-on delay time | td(on) | 27 | ns | Tvj=25°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω | 6 | ||
| Rise time | tr | 41 | ns | Tvj=25°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω | 6 | ||
| Turn-off delay time | td(off) | 277 | ns | Tvj=25°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω | 6 | ||
| Fall time | tf | 17 | ns | Tvj=25°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω | 6 | ||
| Turn-on energy | Eon | 1.8 | mJ | Tvj=25°C, VCC=600V, IC=25.0A, RG=23.0Ω | 6 | ||
| Turn-off energy | Eoff | 0.85 | mJ | Tvj=25°C, VCC=600V, IC=25.0A, RG=23.0Ω | 6 | ||
| Total switching energy | Ets | 2.65 | mJ | Tvj=25°C, VCC=600V, IC=25.0A, RG=23.0Ω | 6 | ||
| Diode reverse recovery time | trr | 290 | ns | Tvj=25°C, VR=600V, IF=25.0A, diF/dt=500A/µs | 6 | ||
| Diode reverse recovery charge | Qrr | 1.2 | µC | Tvj=25°C, VR=600V, IF=25.0A, diF/dt=500A/µs | 6 | ||
| Diode peak reverse recovery current | Irrm | 10.4 | A | Tvj=25°C, VR=600V, IF=25.0A, diF/dt=500A/µs | 6 | ||
| Turn-on delay time | td(on) | 26 | ns | Tvj=175°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω | 6 | ||
| Rise time | tr | 35 | ns | Tvj=175°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω | 6 | ||
| Turn-off delay time | td(off) | 347 | ns | Tvj=175°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω | 6 | ||
| Fall time | tf | 50 | ns | Tvj=175°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω | 6 | ||
| Turn-on energy | Eon | 2.6 | mJ | Tvj=175°C, VCC=600V, IC=25.0A, RG=23.0Ω | 6 | ||
| Turn-off energy | Eoff | 1.7 | mJ | Tvj=175°C, VCC=600V, IC=25.0A, RG=23.0Ω | 6 | ||
| Total switching energy | Ets | 4.3 | mJ | Tvj=175°C, VCC=600V, IC=25.0A, RG=23.0Ω | 6 | ||
| Diode reverse recovery time | trr | 505 | ns | Tvj=175°C, VR=600V, IF=25.0A, diF/dt=500A/µs | 6 | ||
| Diode reverse recovery charge | Qrr | 2.75 | µC | Tvj=175°C, VR=600V, IF=25.0A, diF/dt=500A/µs | 6 | ||
| Diode peak reverse recovery current | Irrm | 12.8 | A | Tvj=175°C, VR=600V, IF=25.0A, diF/dt=500A/µs | 6 |
CAD (KiCad official)
- Symbol:
IKW25N120H3 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
ikw25n120h3-etched.step/ikw25n120h3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ikw25n120h3.step/ikw25n120h3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (16 pp, sha256
e9a41f9932f0299f, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IKW25N120H3
**Infineon Technologies** · IGBTs · TO-247-3
IKW25N120H3 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-emitter voltage limited to ±20 V, with threshold VGE(th) 5.0 to 6.5 V at IC=0.85 mA. |
| 2 | C | passive | Collector (also connected to the mounting tab); collector-emitter voltage 1200 V max, DC collector current 50 A at TC=25°C and 25 A at TC=100°C. |
| 3 | E | passive | Emitter; carries the IGBT collector current and the anti-parallel diode forward current of 25 A at TC=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CES | 1200 | | | V | VGE=0V, IC=0.50mA, Tvj=25°C | 5 |
| Collector-emitter saturation voltage | VCEsat | | 2.05 | 2.4 | V | VGE=15.0V, IC=25.0A, Tvj=25°C | 5 |
| Collector-emitter saturation voltage | VCEsat | | 2.5 | | V | VGE=15.0V, IC=25.0A, Tvj=125°C | 5 |
| Collector-emitter saturation voltage | VCEsat | | 2.7 | | V | VGE=15.0V, IC=25.0A, Tvj=175°C | 5 |
| Diode forward voltage | VF | | 1.8 | 2.35 | V | VGE=0V, IF=12.5A, Tvj=25°C | 5 |
| Diode forward voltage | VF | | 1.85 | | V | VGE=0V, IF=12.5A, Tvj=175°C | 5 |
| Diode forward voltage | VF | | 2.4 | 3.05 | V | VGE=0V, IF=25.0A, Tvj=25°C | 5 |
| Diode forward voltage | VF | | 2.6 | | V | VGE=0V, IF=25.0A, Tvj=125°C | 5 |
| Gate-emitter threshold voltage | VGE(th) | 5 | 5.8 | 6.5 | V | IC=0.85mA, VCE=VGE | 5 |
| Zero gate voltage collector current | ICES | | | 250 | µA | VCE=1200V, VGE=0V, Tvj=25°C | 5 |
| Zero gate voltage collector current | ICES | | | 2500 | µA | VCE=1200V, VGE=0V, Tvj=175°C | 5 |
| Gate-emitter leakage current | IGES | | | 600 | nA | VCE=0V, VGE=20V | 5 |
| Collector-emitter voltage | VCE | | | 1200 | V | | 4 |
| DC collector current | IC | | | 50 | A | TC=25°C, limited by Tvjmax | 4 |
| DC collector current | IC | | | 25 | A | TC=100°C, limited by Tvjmax | 4 |
| Pulsed collector current | ICpuls | | | 100 | A | tp limited by Tvjmax | 4 |
| Turn off safe operating area | | | | 100 | A | VCE ≤1200V, Tvj ≤175°C | 4 |
| Diode forward current | IF | | | 25 | A | TC=25°C, limited by Tvjmax | 4 |
| Diode forward current | IF | | | 12.5 | A | TC=100°C, limited by Tvjmax | 4 |
| Diode pulsed current | IFpuls | | | 100 | A | tp limited by Tvjmax | 4 |
| Gate-emitter voltage | VGE | -20 | | 20 | V | | 4 |
| Short circuit withstand time | tSC | | | 10 | µs | VGE=15.0V, VCC ≤600V, Tvj=175°C, <1000 short circuits, ≥1.0s between | 4 |
| Power dissipation | Ptot | | | 326 | W | TC=25°C | 4 |
| Power dissipation | Ptot | | | 156 | W | TC=100°C | 4 |
| Operating junction temperature | Tvj | -40 | | 175 | °C | | 4 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 4 |
| Soldering temperature | | | | 260 | °C | wave soldering 1.6mm (0.063in.) from case for 10s | 4 |
| Mounting torque | M | | | 0.6 | Nm | M3 screw, max 3 mounting processes | 4 |
| IGBT thermal resistance, junction-case | Rth(j-c) | | | 0.46 | K/W | | 4 |
| Diode thermal resistance, junction-case | Rth(j-c) | | | 1.49 | K/W | | 4 |
| Thermal resistance junction-ambient | Rth(j-a) | | | 40 | K/W | | 4 |
| Transconductance | gfs | | 13 | | S | VCE=20V, IC=25.0A | 5 |
| Input capacitance | Cies | | 1430 | | pF | VCE=25V, VGE=0V, f=1MHz | 5 |
| Output capacitance | Coes | | 115 | | pF | VCE=25V, VGE=0V, f=1MHz | 5 |
| Reverse transfer capacitance | Cres | | 75 | | pF | VCE=25V, VGE=0V, f=1MHz | 5 |
| Gate charge | QG | | 115 | | nC | VCC=960V, IC=25.0A, VGE=15V | 5 |
| Internal emitter inductance | LE | | 13 | | nH | measured 5mm (0.197 in.) from case | 5 |
| Short circuit collector current | IC(SC) | | 87 | | A | VGE=15.0V, VCC ≤600V, tSC ≤10µs, Tvj=175°C | 5 |
| Turn-on delay time | td(on) | | 27 | | ns | Tvj=25°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω | 6 |
| Rise time | tr | | 41 | | ns | Tvj=25°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω | 6 |
| Turn-off delay time | td(off) | | 277 | | ns | Tvj=25°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω | 6 |
| Fall time | tf | | 17 | | ns | Tvj=25°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω | 6 |
| Turn-on energy | Eon | | 1.8 | | mJ | Tvj=25°C, VCC=600V, IC=25.0A, RG=23.0Ω | 6 |
| Turn-off energy | Eoff | | 0.85 | | mJ | Tvj=25°C, VCC=600V, IC=25.0A, RG=23.0Ω | 6 |
| Total switching energy | Ets | | 2.65 | | mJ | Tvj=25°C, VCC=600V, IC=25.0A, RG=23.0Ω | 6 |
| Diode reverse recovery time | trr | | 290 | | ns | Tvj=25°C, VR=600V, IF=25.0A, diF/dt=500A/µs | 6 |
| Diode reverse recovery charge | Qrr | | 1.2 | | µC | Tvj=25°C, VR=600V, IF=25.0A, diF/dt=500A/µs | 6 |
| Diode peak reverse recovery current | Irrm | | 10.4 | | A | Tvj=25°C, VR=600V, IF=25.0A, diF/dt=500A/µs | 6 |
| Turn-on delay time | td(on) | | 26 | | ns | Tvj=175°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω | 6 |
| Rise time | tr | | 35 | | ns | Tvj=175°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω | 6 |
| Turn-off delay time | td(off) | | 347 | | ns | Tvj=175°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω | 6 |
| Fall time | tf | | 50 | | ns | Tvj=175°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω | 6 |
| Turn-on energy | Eon | | 2.6 | | mJ | Tvj=175°C, VCC=600V, IC=25.0A, RG=23.0Ω | 6 |
| Turn-off energy | Eoff | | 1.7 | | mJ | Tvj=175°C, VCC=600V, IC=25.0A, RG=23.0Ω | 6 |
| Total switching energy | Ets | | 4.3 | | mJ | Tvj=175°C, VCC=600V, IC=25.0A, RG=23.0Ω | 6 |
| Diode reverse recovery time | trr | | 505 | | ns | Tvj=175°C, VR=600V, IF=25.0A, diF/dt=500A/µs | 6 |
| Diode reverse recovery charge | Qrr | | 2.75 | | µC | Tvj=175°C, VR=600V, IF=25.0A, diF/dt=500A/µs | 6 |
| Diode peak reverse recovery current | Irrm | | 12.8 | | A | Tvj=175°C, VR=600V, IF=25.0A, diF/dt=500A/µs | 6 |
## CAD (KiCad official)
- Symbol: `IKW25N120H3`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `ikw25n120h3-etched.step` / `ikw25n120h3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ikw25n120h3.step` / `ikw25n120h3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](docs/ikw25n120h3-datasheet.pdf) (16 pp, sha256 `e9a41f9932f0299f`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ikw25n120h3-datasheet.pdf)