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IKW25N120H3

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Infineon Technologies IGBTs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IKW25N120H3

Infineon Technologies · IGBTs · TO-247-3

IKW25N120H3 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-emitter voltage limited to ±20 V, with threshold VGE(th) 5.0 to 6.5 V at IC=0.85 mA.
2 C passive Collector (also connected to the mounting tab); collector-emitter voltage 1200 V max, DC collector current 50 A at TC=25°C and 25 A at TC=100°C.
3 E passive Emitter; carries the IGBT collector current and the anti-parallel diode forward current of 25 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage V(BR)CES 1200 V VGE=0V, IC=0.50mA, Tvj=25°C 5
Collector-emitter saturation voltage VCEsat 2.05 2.4 V VGE=15.0V, IC=25.0A, Tvj=25°C 5
Collector-emitter saturation voltage VCEsat 2.5 V VGE=15.0V, IC=25.0A, Tvj=125°C 5
Collector-emitter saturation voltage VCEsat 2.7 V VGE=15.0V, IC=25.0A, Tvj=175°C 5
Diode forward voltage VF 1.8 2.35 V VGE=0V, IF=12.5A, Tvj=25°C 5
Diode forward voltage VF 1.85 V VGE=0V, IF=12.5A, Tvj=175°C 5
Diode forward voltage VF 2.4 3.05 V VGE=0V, IF=25.0A, Tvj=25°C 5
Diode forward voltage VF 2.6 V VGE=0V, IF=25.0A, Tvj=125°C 5
Gate-emitter threshold voltage VGE(th) 5 5.8 6.5 V IC=0.85mA, VCE=VGE 5
Zero gate voltage collector current ICES 250 µA VCE=1200V, VGE=0V, Tvj=25°C 5
Zero gate voltage collector current ICES 2500 µA VCE=1200V, VGE=0V, Tvj=175°C 5
Gate-emitter leakage current IGES 600 nA VCE=0V, VGE=20V 5
Collector-emitter voltage VCE 1200 V 4
DC collector current IC 50 A TC=25°C, limited by Tvjmax 4
DC collector current IC 25 A TC=100°C, limited by Tvjmax 4
Pulsed collector current ICpuls 100 A tp limited by Tvjmax 4
Turn off safe operating area 100 A VCE ≤1200V, Tvj ≤175°C 4
Diode forward current IF 25 A TC=25°C, limited by Tvjmax 4
Diode forward current IF 12.5 A TC=100°C, limited by Tvjmax 4
Diode pulsed current IFpuls 100 A tp limited by Tvjmax 4
Gate-emitter voltage VGE -20 20 V 4
Short circuit withstand time tSC 10 µs VGE=15.0V, VCC ≤600V, Tvj=175°C, <1000 short circuits, ≥1.0s between 4
Power dissipation Ptot 326 W TC=25°C 4
Power dissipation Ptot 156 W TC=100°C 4
Operating junction temperature Tvj -40 175 °C 4
Storage temperature Tstg -55 150 °C 4
Soldering temperature 260 °C wave soldering 1.6mm (0.063in.) from case for 10s 4
Mounting torque M 0.6 Nm M3 screw, max 3 mounting processes 4
IGBT thermal resistance, junction-case Rth(j-c) 0.46 K/W 4
Diode thermal resistance, junction-case Rth(j-c) 1.49 K/W 4
Thermal resistance junction-ambient Rth(j-a) 40 K/W 4
Transconductance gfs 13 S VCE=20V, IC=25.0A 5
Input capacitance Cies 1430 pF VCE=25V, VGE=0V, f=1MHz 5
Output capacitance Coes 115 pF VCE=25V, VGE=0V, f=1MHz 5
Reverse transfer capacitance Cres 75 pF VCE=25V, VGE=0V, f=1MHz 5
Gate charge QG 115 nC VCC=960V, IC=25.0A, VGE=15V 5
Internal emitter inductance LE 13 nH measured 5mm (0.197 in.) from case 5
Short circuit collector current IC(SC) 87 A VGE=15.0V, VCC ≤600V, tSC ≤10µs, Tvj=175°C 5
Turn-on delay time td(on) 27 ns Tvj=25°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω 6
Rise time tr 41 ns Tvj=25°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω 6
Turn-off delay time td(off) 277 ns Tvj=25°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω 6
Fall time tf 17 ns Tvj=25°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω 6
Turn-on energy Eon 1.8 mJ Tvj=25°C, VCC=600V, IC=25.0A, RG=23.0Ω 6
Turn-off energy Eoff 0.85 mJ Tvj=25°C, VCC=600V, IC=25.0A, RG=23.0Ω 6
Total switching energy Ets 2.65 mJ Tvj=25°C, VCC=600V, IC=25.0A, RG=23.0Ω 6
Diode reverse recovery time trr 290 ns Tvj=25°C, VR=600V, IF=25.0A, diF/dt=500A/µs 6
Diode reverse recovery charge Qrr 1.2 µC Tvj=25°C, VR=600V, IF=25.0A, diF/dt=500A/µs 6
Diode peak reverse recovery current Irrm 10.4 A Tvj=25°C, VR=600V, IF=25.0A, diF/dt=500A/µs 6
Turn-on delay time td(on) 26 ns Tvj=175°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω 6
Rise time tr 35 ns Tvj=175°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω 6
Turn-off delay time td(off) 347 ns Tvj=175°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω 6
Fall time tf 50 ns Tvj=175°C, VCC=600V, IC=25.0A, VGE=0.0/15.0V, RG=23.0Ω 6
Turn-on energy Eon 2.6 mJ Tvj=175°C, VCC=600V, IC=25.0A, RG=23.0Ω 6
Turn-off energy Eoff 1.7 mJ Tvj=175°C, VCC=600V, IC=25.0A, RG=23.0Ω 6
Total switching energy Ets 4.3 mJ Tvj=175°C, VCC=600V, IC=25.0A, RG=23.0Ω 6
Diode reverse recovery time trr 505 ns Tvj=175°C, VR=600V, IF=25.0A, diF/dt=500A/µs 6
Diode reverse recovery charge Qrr 2.75 µC Tvj=175°C, VR=600V, IF=25.0A, diF/dt=500A/µs 6
Diode peak reverse recovery current Irrm 12.8 A Tvj=175°C, VR=600V, IF=25.0A, diF/dt=500A/µs 6

CAD (KiCad official)

  • Symbol: IKW25N120H3
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ikw25n120h3-etched.step / ikw25n120h3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikw25n120h3.step / ikw25n120h3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (16 pp, sha256 e9a41f9932f0299f, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF