# IKP20N60H3

**Infineon Technologies** · IGBTs · TO-220-3

IKP20N60H3 from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-emitter voltage is rated at ±20 V maximum and the gate-emitter threshold voltage is 4.1 V min, 5.1 V typ, 5.7 V max. |
| 2 | C | passive | Collector, also connected to the mounting tab; collector-emitter voltage is rated at 600 V and DC collector current at 40.0 A at TC=25°C and 20.0 A at TC=100°C. |
| 3 | E | passive | Emitter; the anti-parallel diode is connected between emitter and collector, with a diode forward current of 20.0 A at TC=25°C and 10.0 A at TC=100°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220-3 |
| Category | Transistors |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `IKP20N60H3`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files: `ikp20n60h3-etched.step` / `ikp20n60h3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ikp20n60h3.step` / `ikp20n60h3.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](docs/ikp20n60h3-datasheet.pdf) (16 pp, sha256 `d838bd50daecb4ee`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ikp20n60h3-datasheet.pdf)