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IKP20N60H3

Infineon Technologies · IGBTs · TO-220-3

IKP20N60H3 from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-emitter voltage is rated at ±20 V maximum and the gate-emitter threshold voltage is 4.1 V min, 5.1 V typ, 5.7 V max.
2 C passive Collector, also connected to the mounting tab; collector-emitter voltage is rated at 600 V and DC collector current at 40.0 A at TC=25°C and 20.0 A at TC=100°C.
3 E passive Emitter; the anti-parallel diode is connected between emitter and collector, with a diode forward current of 20.0 A at TC=25°C and 10.0 A at TC=100°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220-3
Category Transistors
Pins 3

CAD (KiCad official)

  • Symbol: IKP20N60H3
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)
  • 3D model files: ikp20n60h3-etched.step / ikp20n60h3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikp20n60h3.step / ikp20n60h3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (16 pp, sha256 d838bd50daecb4ee, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF