component
IKP08N65H5
Public Made by Adomby adom
Infineon Technologies IGBT Transistors / Modules, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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{
"schema_version": 1,
"type": "component",
"slug": "ikp08n65h5",
"title": "IKP08N65H5",
"brief": "Infineon Technologies IGBT Transistors / Modules, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"transistors-thyristors",
"ikp08n65h5",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "IKP08N65H5",
"manufacturer": "Infineon Technologies",
"package": "TO-220-3",
"pin_count": 3,
"category": "Transistors/Thyristors",
"subcategory": "IGBT Transistors / Modules",
"datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588894642489708545",
"parts": {
"symbol": "ikp08n65h5.kicad_sym",
"footprint": "ikp08n65h5.kicad_mod",
"model_3d": "ikp08n65h5-hero.glb",
"model_3d_plain": "ikp08n65h5-etched.glb",
"model_3d_step": "ikp08n65h5-etched.step",
"model_3d_step_plain": "ikp08n65h5.step",
"lbr": "ikp08n65h5.lbr"
},
"distributor_links": {
"lcsc": "C536189"
},
"distributor_check": {
"checked_at": "2026-10-18T11:22:38Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "quota"
},
"mouser": {
"pn": null,
"status": "quota"
}
},
"pins": [
{
"number": "1",
"name": "G",
"type": "input",
"description": "Gate; controls the IGBT, with gate-emitter voltage rated at ±20 V (±30 V transient, tp ≤10 µs) and threshold VGE(th) 3.2 to 4.8 V."
},
{
"number": "2",
"name": "C",
"type": "passive",
"description": "Collector (also connected to the tab); collector-emitter voltage rated at 650 V and DC collector current 18 A at TC=25°C."
},
{
"number": "3",
"name": "E",
"type": "passive",
"description": "Emitter; the anode of the antiparallel diode is also connected here, with diode forward current 20 A at TC=25°C."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-sonnet-5-5",
"primary_mode": "text+vision",
"consensus_model": "claude-opus-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The datasheet does not print pin numbers 1-3. The page 2 package picture labels the leads G, C, E fr; The mounting tab is connected to the collector (labelled C on the page 2 picture). The datasheet giv",
"vision extraction: provenance cannot be text-verified; needs consensus"
],
"pages_sent": 17,
"cost_usd": 0.1976,
"at": "2026-10-18T11:20:43"
},
"datasheet": {
"url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588894642489708545",
"pages": 17,
"sha256": "32d1a4999d53780c",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 3,
"described": 3,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "ikp08n65h5.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
10.25,
4.455,
28.525
],
"zmin_mm": -9.75,
"centre_offset_mm": 0.932,
"footprint_binding": "identity",
"sha256": "7cb065d935df5771f0ba6e48ddd180863a121af76483dad7f18e667a7b68204a",
"checked": "2026-10-18",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "ikp08n65h5-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
10.25,
4.455,
28.525
],
"zmin_mm": -9.75,
"centre_offset_mm": 0.932,
"footprint_binding": "identity",
"sha256": "f1888dc98bc30b2d83478eda41197831c8fe13618630c7ac63f490d0af3583a1",
"checked": "2026-10-18",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "Infineon Technologies",
"Package": "TO-220-3",
"Category": "Transistors/Thyristors",
"Pins": "3"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "32d1a4999d53780c94a461fcc7d3c672d13b4f821ed724f2439f2c28bd514d10",
"rows": [
{
"name": "Collector-emitter voltage",
"symbol": "VCE",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 650,
"conditions": "",
"source_page": 4,
"source": "datasheet"
},
{
"name": "DC collector current, limited by Tvj max",
"symbol": "IC",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 18,
"conditions": "TC=25°C",
"source_page": 4,
"source": "datasheet"
},
{
"name": "DC collector current, limited by Tvj max",
"symbol": "IC",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 11,
"conditions": "TC=100°C",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Pulsed collector current, tp limited by Tvj max",
"symbol": "ICpuls",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 24,
"conditions": "",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Turn off safe operating area",
"symbol": "",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 24,
"conditions": "VCE ≤650V, Tvj ≤175°C",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Diode forward current, limited by Tvj max",
"symbol": "IF",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 20,
"conditions": "TC=25°C",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Diode forward current, limited by Tvj max",
"symbol": "IF",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 12,
"conditions": "TC=100°C",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Diode pulsed current, tp limited by Tvj max",
"symbol": "IFpuls",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 24,
"conditions": "",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Gate-emitter voltage",
"symbol": "VGE",
"kind": "absolute_maximum",
"unit": "V",
"min": -20,
"typ": null,
"max": 20,
"conditions": "",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Transient gate-emitter voltage",
"symbol": "VGE",
"kind": "absolute_maximum",
"unit": "V",
"min": -30,
"typ": null,
"max": 30,
"conditions": "tp ≤10µs, D<0.010",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Power dissipation",
"symbol": "Ptot",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 70,
"conditions": "TC=25°C",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Power dissipation",
"symbol": "Ptot",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 35,
"conditions": "TC=100°C",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Operating junction temperature",
"symbol": "Tvj",
"kind": "absolute_maximum",
"unit": "°C",
"min": -40,
"typ": null,
"max": 175,
"conditions": "",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Storage temperature",
"symbol": "Tstg",
"kind": "absolute_maximum",
"unit": "°C",
"min": -55,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Soldering temperature, wave soldering",
"symbol": "",
"kind": "absolute_maximum",
"unit": "°C",
"min": null,
"typ": null,
"max": 260,
"conditions": "1.6mm (0.063in.) from case for 10s",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Mounting torque, M3 screw",
"symbol": "M",
"kind": "absolute_maximum",
"unit": "Nm",
"min": null,
"typ": null,
"max": 0.6,
"conditions": "Maximum of mounting processes: 3",
"source_page": 4,
"source": "datasheet"
},
{
"name": "IGBT thermal resistance, junction - case",
"symbol": "Rth(j-c)",
"kind": "thermal",
"unit": "K/W",
"min": null,
"typ": null,
"max": 2.2,
"conditions": "",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Diode thermal resistance, junction - case",
"symbol": "Rth(j-c)",
"kind": "thermal",
"unit": "K/W",
"min": null,
"typ": null,
"max": 2.9,
"conditions": "",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Thermal resistance junction - ambient",
"symbol": "Rth(j-a)",
"kind": "thermal",
"unit": "K/W",
"min": null,
"typ": null,
"max": 62,
"conditions": "",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Collector-emitter breakdown voltage",
"symbol": "V(BR)CES",
"kind": "electrical",
"unit": "V",
"min": 650,
"typ": null,
"max": null,
"conditions": "VGE=0V, IC=0.20mA",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Collector-emitter saturation voltage",
"symbol": "VCEsat",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": 1.65,
"max": 2.1,
"conditions": "VGE=15.0V, IC=8.0A, Tvj=25°C",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Diode forward voltage",
"symbol": "VF",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": 1.45,
"max": 1.8,
"conditions": "VGE=0V, IF=9.0A, Tvj=25°C",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Gate-emitter threshold voltage",
"symbol": "VGE(th)",
"kind": "electrical",
"unit": "V",
"min": 3.2,
"typ": 4,
"max": 4.8,
"conditions": "IC=0.08mA, VCE=VGE",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Zero gate voltage collector current",
"symbol": "ICES",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": null,
"max": 40,
"conditions": "VCE=650V, VGE=0V, Tvj=25°C",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Zero gate voltage collector current",
"symbol": "ICES",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": null,
"max": 4000,
"conditions": "VCE=650V, VGE=0V, Tvj=175°C",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Gate-emitter leakage current",
"symbol": "IGES",
"kind": "electrical",
"unit": "nA",
"min": null,
"typ": null,
"max": 100,
"conditions": "VCE=0V, VGE=20V",
"source_page": 5,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"ikp08n65h5"
],
"discovery_pitch": "IKP08N65H5 (Infineon Technologies) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"ikp08n65h5.kicad_sym",
"ikp08n65h5.kicad_mod",
"ikp08n65h5.glb",
"ikp08n65h5.step",
"ikp08n65h5.lbr",
"docs/hero.png",
"docs/ikp08n65h5-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"ikp08n65h5-hero.glb",
"ikp08n65h5-hero.overlay.json",
"ikp08n65h5-etched.glb"
],
"visibility": {
"public": true
}
}