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IKP08N65H5

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Infineon Technologies IGBT Transistors / Modules, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IKP08N65H5

Infineon Technologies · IGBT Transistors / Modules · TO-220-3

IKP08N65H5 from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the IGBT, with gate-emitter voltage rated at ±20 V (±30 V transient, tp ≤10 µs) and threshold VGE(th) 3.2 to 4.8 V.
2 C passive Collector (also connected to the tab); collector-emitter voltage rated at 650 V and DC collector current 18 A at TC=25°C.
3 E passive Emitter; the anode of the antiparallel diode is also connected here, with diode forward current 20 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCE 650 V 4
DC collector current, limited by Tvj max IC 18 A TC=25°C 4
DC collector current, limited by Tvj max IC 11 A TC=100°C 4
Pulsed collector current, tp limited by Tvj max ICpuls 24 A 4
Turn off safe operating area 24 A VCE ≤650V, Tvj ≤175°C 4
Diode forward current, limited by Tvj max IF 20 A TC=25°C 4
Diode forward current, limited by Tvj max IF 12 A TC=100°C 4
Diode pulsed current, tp limited by Tvj max IFpuls 24 A 4
Gate-emitter voltage VGE -20 20 V 4
Transient gate-emitter voltage VGE -30 30 V tp ≤10µs, D<0.010 4
Power dissipation Ptot 70 W TC=25°C 4
Power dissipation Ptot 35 W TC=100°C 4
Operating junction temperature Tvj -40 175 °C 4
Storage temperature Tstg -55 150 °C 4
Soldering temperature, wave soldering 260 °C 1.6mm (0.063in.) from case for 10s 4
Mounting torque, M3 screw M 0.6 Nm Maximum of mounting processes: 3 4
IGBT thermal resistance, junction - case Rth(j-c) 2.2 K/W 4
Diode thermal resistance, junction - case Rth(j-c) 2.9 K/W 4
Thermal resistance junction - ambient Rth(j-a) 62 K/W 4
Collector-emitter breakdown voltage V(BR)CES 650 V VGE=0V, IC=0.20mA 5
Collector-emitter saturation voltage VCEsat 1.65 2.1 V VGE=15.0V, IC=8.0A, Tvj=25°C 5
Diode forward voltage VF 1.45 1.8 V VGE=0V, IF=9.0A, Tvj=25°C 5
Gate-emitter threshold voltage VGE(th) 3.2 4 4.8 V IC=0.08mA, VCE=VGE 5
Zero gate voltage collector current ICES 40 µA VCE=650V, VGE=0V, Tvj=25°C 5
Zero gate voltage collector current ICES 4000 µA VCE=650V, VGE=0V, Tvj=175°C 5
Gate-emitter leakage current IGES 100 nA VCE=0V, VGE=20V 5

CAD (KiCad official)

  • Symbol: IKP08N65H5
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)
  • 3D model files: ikp08n65h5-etched.step / ikp08n65h5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikp08n65h5.step / ikp08n65h5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (17 pp, sha256 32d1a4999d53780c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF