# IKN01N60RC2ATMA1

**Infineon Technologies** · IGBT Transistors / Modules · SOT-223-3

IKN01N60RC2ATMA1 from Infineon Technologies, in a SOT-223-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the IGBT, rated at ±20 V continuous gate-emitter voltage (±30 V transient for tp ≤ 10 µs), with a threshold VGEth of 4.3 to 5.7 V at IC = 10 µA. |
| 2 | C | passive | Collector (also the exposed tab, which sits where the omitted centre lead would be), rated VCE = 600 V and IC = 2.2 A at Tc = 25 °C, with the integrated reverse-conducting diode cathode connected to it. |
| 3 | E | passive | Emitter of the IGBT, which is also the anode of the integrated diode, and the power return for the 1 A collector current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-223-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCE |  |  | 600 | V | Tvj ≥ 25 °C | 3 |
| DC collector current | IC |  |  | 2.2 | A | Tc = 25 °C | 3 |
| DC collector current | IC |  |  | 1.3 | A | Tc = 100 °C | 3 |
| Pulsed collector current | ICpulse |  |  | 3 | A | tp limited by Tvjmax | 3 |
| Turn-off safe operating area |  |  |  | 3 | A | VCE ≤ 600 V, tp = 1 µs, Tvj ≤ 150 °C | 3 |
| Gate-emitter voltage | VGE | -20 |  | 20 | V |  | 3 |
| Transient gate-emitter voltage | VGE | -30 |  | 30 | V | tp ≤ 10 µs, D < 0.01 | 3 |
| Short-circuit withstand time | tSC |  |  | 3 | µs | VCC ≤ 400 V, VGE = 15 V, Allowed number of short circuits < 1000, Time between short circuits ≥ 1.0 s, Tvj = 150 °C | 3 |
| Power dissipation | Ptot |  |  | 5.1 | W | Tc = 25 °C | 3 |
| Power dissipation | Ptot |  |  | 2 | W | Tc = 100 °C | 3 |
| Repetitive peak reverse voltage | VRRM |  |  | 600 | V | Tvj ≥ 25 °C | 5 |
| Diode forward current | IF |  |  | 2 | A | Tc = 25 °C | 5 |
| Diode forward current | IF |  |  | 1 | A | Tc = 100 °C | 5 |
| Diode pulsed current | IFpulse |  |  | 3 | A | tp limited by Tvjmax | 5 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 3 |
| Soldering temperature | Tsold |  |  | 260 | °C | wave soldering / reflow soldering (MSL1 according to JEDEC J-STA-020) | 3 |
| Operating junction temperature (IGBT) | Tvj | -40 |  | 150 | °C |  | 5 |
| Operating junction temperature (diode) | Tvj | -40 |  | 150 | °C |  | 6 |
| Thermal resistance junction-ambient, min. footprint | Rth(j-a) |  |  | 160 | K/W | min. footprint | 3 |
| Thermal resistance junction-ambient, 6 cm2 Cu | Rth(j-a) |  |  | 75 | K/W | 6 cm2 Cu on PCB | 3 |
| IGBT thermal resistance junction-case | Rth(j-c) |  |  | 24.4 | K/W | single cooling pulse | 3 |
| Diode thermal resistance junction-case | Rth(j-c) |  |  | 43.5 | K/W | single cooling pulse | 3 |
| Collector-emitter saturation voltage | VCEsat |  | 2 | 2.3 | V | IC = 1 A, VGE = 15 V, Tvj = 25 °C | 4 |
| Collector-emitter saturation voltage | VCEsat |  | 2.3 |  | V | IC = 1 A, VGE = 15 V, Tvj = 150 °C | 4 |
| Gate-emitter threshold voltage | VGEth | 4.3 | 5 | 5.7 | V | IC = 10 µA, VCE = VGE | 4 |
| Zero gate-voltage collector current | ICES |  |  | 25 | µA | VCE = 600 V, VGE=0 V, Tvj = 25 °C | 4 |
| Zero gate-voltage collector current | ICES |  |  | 2500 | µA | VCE = 600 V, VGE=0 V, Tvj = 150 °C | 4 |
| Gate-emitter leakage current | IGES |  |  | 100 | nA | VCE = 0 V, VGE = 20 V | 4 |
| Diode forward voltage | VF |  | 1.85 | 2.2 | V | IF = 1 A, Tvj = 25 °C | 5 |
| Diode forward voltage | VF |  | 1.9 |  | V | IF = 1 A, Tvj = 150 °C | 5 |
| Transconductance | gfs |  | 0.5 |  | S | IC = 1 A, VCE = 20 V | 4 |
| Input capacitance | Cies |  | 55 |  | pF | VCE = 25 V, VGE=0 V, f = 1000 kHz | 4 |
| Output capacitance | Coes |  | 4 |  | pF | VCE = 25 V, VGE=0 V, f = 1000 kHz | 4 |
| Reverse transfer capacitance | Cres |  | 2.5 |  | pF | VCE = 25 V, VGE=0 V, f = 1000 kHz | 4 |
| Gate charge | QG |  | 9 |  | nC | IC = 1 A, VCC = 480 V, VGE = 15 V | 4 |
| Turn-on energy | Eon |  | 25.1 |  | µJ | Tvj = 25 °C, IC = 1 A | 4 |
| Turn-off energy | Eoff |  | 13.5 |  | µJ | Tvj = 25 °C, IC = 1 A | 4 |
| Total switching energy | Ets |  | 38.7 |  | µJ | Tvj = 25 °C, IC = 1 A | 4 |
| Diode reverse recovery time | trr |  | 59.5 |  | ns | VR = 400 V, Tvj = 25 °C, IF = 1 A, -diF/dt = 272 A/µs | 5 |
| Diode reverse recovery charge | Qrr |  | 0.06 |  | µC | VR = 400 V, Tvj = 25 °C, IF = 1 A, -diF/dt = 272 A/µs | 5 |
| Diode peak reverse recovery current | Irrm |  | 1.9 |  | A | VR = 400 V, Tvj = 25 °C, IF = 1 A, -diF/dt = 272 A/µs | 5 |

## CAD (KiCad official)

- Symbol: `IKN01N60RC2ATMA1`
- Footprint: `Package_TO_SOT_SMD:SOT-223-3_TabPin2`
- 3D model: SOT-223-3 (KiCad packages3D, STEP)
- 3D model files: `ikn01n60rc2atma1-etched.step` / `ikn01n60rc2atma1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ikn01n60rc2atma1.step` / `ikn01n60rc2atma1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://www.infineon.com/assets/row/public/documents/60/49/infineon-ikn01n60rc2-datasheet-en.pdf) (17 pp, sha256 `4576273d9513a5e4`, retrieved 2026-10-31, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ikn01n60rc2atma1-datasheet.pdf)