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IKN01N60RC2ATMA1

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Infineon Technologies IGBT Transistors / Modules, SOT-223-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsikn01n60rc2atma1factory-2.0.0extractor-text

Verified IKN01N60RC2ATMA1

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IKN01N60RC2ATMA1 · SOT-223-3 · 3 pins
  • ✓copper: 4 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 17-page datasheet
  • ✓distributor: lcsc C3191594, digikey 448-IKN01N60RC2ATMA1TR-ND, mouser 726-IKN01N60RC2ATMA1
  • ✓family: SOT-223-3_TabPin2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-yibfj3hs/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.14)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ikn01n60rc2atma1.kicad_sym✓ ikn01n60rc2atma1.kicad_mod✓ ikn01n60rc2atma1.step
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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7d ago
viewers ikn01n60rc2atma1: viewers · Ray 7d ago
ikn01n60rc2atma1-etched.glb Publish 0.1.0 · Ray 7d ago
ikn01n60rc2atma1-etched.step ikn01n60rc2atma1: factory component page (tier=mfr) · Ray 7d ago
ikn01n60rc2atma1-hero.glb ikn01n60rc2atma1: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
ikn01n60rc2atma1-hero.overlay.json Publish 0.1.0 · Ray 7d ago
ikn01n60rc2atma1.glb Publish 0.1.0 · Ray 7d ago
ikn01n60rc2atma1.kicad_mod Publish 0.1.0 · Ray 7d ago
ikn01n60rc2atma1.kicad_sym Publish 0.1.0 · Ray 7d ago
ikn01n60rc2atma1.lbr Publish 0.1.0 · Ray 7d ago
ikn01n60rc2atma1.step Publish 0.1.0 · Ray 7d ago
package.json Publish 0.1.0 · Ray 7d ago
page.json Set visibility: public · Ray 7d ago
README.md Publish 0.1.0 · Ray 7d ago
verification.json Verified: Published by the parts factory: tier mfr, 3 pins · Ray 7d ago

IKN01N60RC2ATMA1

Infineon Technologies · IGBT Transistors / Modules · SOT-223-3

IKN01N60RC2ATMA1 from Infineon Technologies, in a SOT-223-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the IGBT, rated at ±20 V continuous gate-emitter voltage (±30 V transient for tp ≤ 10 µs), with a threshold VGEth of 4.3 to 5.7 V at IC = 10 µA.
2 C passive Collector (also the exposed tab, which sits where the omitted centre lead would be), rated VCE = 600 V and IC = 2.2 A at Tc = 25 °C, with the integrated reverse-conducting diode cathode connected to it.
3 E passive Emitter of the IGBT, which is also the anode of the integrated diode, and the power return for the 1 A collector current.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-223-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCE 600 V Tvj ≥ 25 °C 3
DC collector current IC 2.2 A Tc = 25 °C 3
DC collector current IC 1.3 A Tc = 100 °C 3
Pulsed collector current ICpulse 3 A tp limited by Tvjmax 3
Turn-off safe operating area 3 A VCE ≤ 600 V, tp = 1 µs, Tvj ≤ 150 °C 3
Gate-emitter voltage VGE -20 20 V 3
Transient gate-emitter voltage VGE -30 30 V tp ≤ 10 µs, D < 0.01 3
Short-circuit withstand time tSC 3 µs VCC ≤ 400 V, VGE = 15 V, Allowed number of short circuits < 1000, Time between short circuits ≥ 1.0 s, Tvj = 150 °C 3
Power dissipation Ptot 5.1 W Tc = 25 °C 3
Power dissipation Ptot 2 W Tc = 100 °C 3
Repetitive peak reverse voltage VRRM 600 V Tvj ≥ 25 °C 5
Diode forward current IF 2 A Tc = 25 °C 5
Diode forward current IF 1 A Tc = 100 °C 5
Diode pulsed current IFpulse 3 A tp limited by Tvjmax 5
Storage temperature Tstg -55 150 °C 3
Soldering temperature Tsold 260 °C wave soldering / reflow soldering (MSL1 according to JEDEC J-STA-020) 3
Operating junction temperature (IGBT) Tvj -40 150 °C 5
Operating junction temperature (diode) Tvj -40 150 °C 6
Thermal resistance junction-ambient, min. footprint Rth(j-a) 160 K/W min. footprint 3
Thermal resistance junction-ambient, 6 cm2 Cu Rth(j-a) 75 K/W 6 cm2 Cu on PCB 3
IGBT thermal resistance junction-case Rth(j-c) 24.4 K/W single cooling pulse 3
Diode thermal resistance junction-case Rth(j-c) 43.5 K/W single cooling pulse 3
Collector-emitter saturation voltage VCEsat 2 2.3 V IC = 1 A, VGE = 15 V, Tvj = 25 °C 4
Collector-emitter saturation voltage VCEsat 2.3 V IC = 1 A, VGE = 15 V, Tvj = 150 °C 4
Gate-emitter threshold voltage VGEth 4.3 5 5.7 V IC = 10 µA, VCE = VGE 4
Zero gate-voltage collector current ICES 25 µA VCE = 600 V, VGE=0 V, Tvj = 25 °C 4
Zero gate-voltage collector current ICES 2500 µA VCE = 600 V, VGE=0 V, Tvj = 150 °C 4
Gate-emitter leakage current IGES 100 nA VCE = 0 V, VGE = 20 V 4
Diode forward voltage VF 1.85 2.2 V IF = 1 A, Tvj = 25 °C 5
Diode forward voltage VF 1.9 V IF = 1 A, Tvj = 150 °C 5
Transconductance gfs 0.5 S IC = 1 A, VCE = 20 V 4
Input capacitance Cies 55 pF VCE = 25 V, VGE=0 V, f = 1000 kHz 4
Output capacitance Coes 4 pF VCE = 25 V, VGE=0 V, f = 1000 kHz 4
Reverse transfer capacitance Cres 2.5 pF VCE = 25 V, VGE=0 V, f = 1000 kHz 4
Gate charge QG 9 nC IC = 1 A, VCC = 480 V, VGE = 15 V 4
Turn-on energy Eon 25.1 µJ Tvj = 25 °C, IC = 1 A 4
Turn-off energy Eoff 13.5 µJ Tvj = 25 °C, IC = 1 A 4
Total switching energy Ets 38.7 µJ Tvj = 25 °C, IC = 1 A 4
Diode reverse recovery time trr 59.5 ns VR = 400 V, Tvj = 25 °C, IF = 1 A, -diF/dt = 272 A/µs 5
Diode reverse recovery charge Qrr 0.06 µC VR = 400 V, Tvj = 25 °C, IF = 1 A, -diF/dt = 272 A/µs 5
Diode peak reverse recovery current Irrm 1.9 A VR = 400 V, Tvj = 25 °C, IF = 1 A, -diF/dt = 272 A/µs 5

CAD (KiCad official)

  • Symbol: IKN01N60RC2ATMA1
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223-3 (KiCad packages3D, STEP)
  • 3D model files: ikn01n60rc2atma1-etched.step / ikn01n60rc2atma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikn01n60rc2atma1.step / ikn01n60rc2atma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (17 pp, sha256 4576273d9513a5e4, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF