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IHW40N135R5

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Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs ihw40n135r5: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
viewers ihw40n135r5: viewers · Ray 1mo ago
ihw40n135r5-etched.fit.json ihw40n135r5: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
ihw40n135r5-etched.glb ihw40n135r5: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
ihw40n135r5-etched.step ihw40n135r5: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
ihw40n135r5.glb Publish 0.1.0 · Ray 1mo ago
ihw40n135r5.kicad_mod Publish 0.1.0 · Ray 1mo ago
ihw40n135r5.kicad_sym Publish 0.1.0 · Ray 1mo ago
ihw40n135r5.lbr Publish 0.1.0 · Ray 1mo ago
ihw40n135r5.step Publish 0.1.0 · Ray 1mo ago
package.json ihw40n135r5: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding) · Ray 1mo ago
page.json ihw40n135r5: specified limits as data (metadata.characteristics, 27 rows from the datasheet) · Ray 25d ago
README.md ihw40n135r5: specified limits as data (metadata.characteristics, 27 rows from the datasheet) · Ray 25d ago

IHW40N135R5

Infineon Technologies · IGBT Transistors / Modules · TO-247-3

IHW40N135R5 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control input with gate-emitter threshold voltage 5.1-6.4V (IC=1mA, VCE=VGE) and maximum voltage rating ±25V absolute maximum, ±20V transient per IEC61000-4-2.
2 Collector power_in Collector power terminal rated for 1350V collector-emitter breakdown voltage and 80A continuous DC current at 25°C case temperature; saturation voltage 1.65V at 40A with 15V gate drive at 25°C junction temperature.
3 Emitter power_out Emitter return terminal serving as reference for gate circuit; includes monolithic body diode with 1.95V forward voltage at 40A forward current and 25°C junction temperature.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCE 1350 V Tvj ≥25°C 3
DC collector current IC 80 A Tc=25°C 3
DC collector current IC 40 A Tc=100°C 3
Pulsed collector current ICpuls 120 A tp limited by Tvjmax 3
Non repetitive peak collector current ICSM 200 A Footnote 1: capacitor charging saturation current limited by Tvjmax < 175°C and tp < 3µs 3
Turn off safe operating area 120 A VCE ≤1350V, Tvj ≤175°C, tp=1µs 3
Diode forward current IF 80 A Tc=25°C 3
Diode forward current IF 40 A Tc=100°C 3
Diode pulsed current IFpuls 120 A tp limited by Tvjmax 3
Gate-emitter voltage VGE -20 20 V 3
Transient gate-emitter voltage VGE -25 25 V tp ≤10µs, D<0.010 3
Power dissipation Ptot 394 W Tc=25°C 3
Power dissipation Ptot 197 W Tc=100°C 3
Operating junction temperature Tvj -40 175 °C 3
Storage temperature Tstg -55 150 °C 3
Soldering temperature 260 °C Wave soldering 1.6mm (0.063in.) from case for 10s 3
Mounting torque M 0.6 Nm M3 screw; maximum of mounting processes: 3 3
IGBT thermal resistance, junction - case Rth(j-c) 0.38 K/W 3
Diode thermal resistance, junction - case Rth(j-c) 0.38 K/W 3
Thermal resistance junction - ambient Rth(j-a) 40 K/W 3
Collector-emitter breakdown voltage V(BR)CES 1350 V VGE=0V, IC=0.50mA 4
Collector-emitter saturation voltage VCEsat 1.65 1.95 V VGE=15.0V, IC=40.0A, Tvj=25°C 4
Diode forward voltage VF 1.95 2.15 V VGE=0V, IF=40.0A, Tvj=25°C 4
Gate-emitter threshold voltage VGE(th) 5.1 5.8 6.4 V IC=1.00mA, VCE=VGE 4
Zero gate voltage collector current ICES 850 µA VCE=1350V, VGE=0V, Tvj=25°C 4
Zero gate voltage collector current ICES 100 µA VCE=1350V, VGE=0V, Tvj=175°C 4
Gate-emitter leakage current IGES 100 nA VCE=0V, VGE=20V 4

CAD (KiCad official)

  • Symbol: IHW40N135R5
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ihw40n135r5-etched.step / ihw40n135r5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ihw40n135r5.step / ihw40n135r5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (15 pp, sha256 3ac66764ddd7f173, retrieved 2026-09-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF