component
IHW40N135R5
Public Made by Adomby adom
Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownIHW40N135R5
Infineon Technologies · IGBT Transistors / Modules · TO-247-3
IHW40N135R5 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input with gate-emitter threshold voltage 5.1-6.4V (IC=1mA, VCE=VGE) and maximum voltage rating ±25V absolute maximum, ±20V transient per IEC61000-4-2. |
| 2 | Collector | power_in | Collector power terminal rated for 1350V collector-emitter breakdown voltage and 80A continuous DC current at 25°C case temperature; saturation voltage 1.65V at 40A with 15V gate drive at 25°C junction temperature. |
| 3 | Emitter | power_out | Emitter return terminal serving as reference for gate circuit; includes monolithic body diode with 1.95V forward voltage at 40A forward current and 25°C junction temperature. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCE | 1350 | V | Tvj ≥25°C | 3 | ||
| DC collector current | IC | 80 | A | Tc=25°C | 3 | ||
| DC collector current | IC | 40 | A | Tc=100°C | 3 | ||
| Pulsed collector current | ICpuls | 120 | A | tp limited by Tvjmax | 3 | ||
| Non repetitive peak collector current | ICSM | 200 | A | Footnote 1: capacitor charging saturation current limited by Tvjmax < 175°C and tp < 3µs | 3 | ||
| Turn off safe operating area | 120 | A | VCE ≤1350V, Tvj ≤175°C, tp=1µs | 3 | |||
| Diode forward current | IF | 80 | A | Tc=25°C | 3 | ||
| Diode forward current | IF | 40 | A | Tc=100°C | 3 | ||
| Diode pulsed current | IFpuls | 120 | A | tp limited by Tvjmax | 3 | ||
| Gate-emitter voltage | VGE | -20 | 20 | V | 3 | ||
| Transient gate-emitter voltage | VGE | -25 | 25 | V | tp ≤10µs, D<0.010 | 3 | |
| Power dissipation | Ptot | 394 | W | Tc=25°C | 3 | ||
| Power dissipation | Ptot | 197 | W | Tc=100°C | 3 | ||
| Operating junction temperature | Tvj | -40 | 175 | °C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Soldering temperature | 260 | °C | Wave soldering 1.6mm (0.063in.) from case for 10s | 3 | |||
| Mounting torque | M | 0.6 | Nm | M3 screw; maximum of mounting processes: 3 | 3 | ||
| IGBT thermal resistance, junction - case | Rth(j-c) | 0.38 | K/W | 3 | |||
| Diode thermal resistance, junction - case | Rth(j-c) | 0.38 | K/W | 3 | |||
| Thermal resistance junction - ambient | Rth(j-a) | 40 | K/W | 3 | |||
| Collector-emitter breakdown voltage | V(BR)CES | 1350 | V | VGE=0V, IC=0.50mA | 4 | ||
| Collector-emitter saturation voltage | VCEsat | 1.65 | 1.95 | V | VGE=15.0V, IC=40.0A, Tvj=25°C | 4 | |
| Diode forward voltage | VF | 1.95 | 2.15 | V | VGE=0V, IF=40.0A, Tvj=25°C | 4 | |
| Gate-emitter threshold voltage | VGE(th) | 5.1 | 5.8 | 6.4 | V | IC=1.00mA, VCE=VGE | 4 |
| Zero gate voltage collector current | ICES | 850 | µA | VCE=1350V, VGE=0V, Tvj=25°C | 4 | ||
| Zero gate voltage collector current | ICES | 100 | µA | VCE=1350V, VGE=0V, Tvj=175°C | 4 | ||
| Gate-emitter leakage current | IGES | 100 | nA | VCE=0V, VGE=20V | 4 |
CAD (KiCad official)
- Symbol:
IHW40N135R5 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
ihw40n135r5-etched.step/ihw40n135r5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ihw40n135r5.step/ihw40n135r5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (15 pp, sha256
3ac66764ddd7f173, retrieved 2026-09-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-4-6(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).