component
IHW40N135R5
Public Made by Adomby adom
Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
ihw40n135r5: specified limits as data (metadata.characteristics, 27 rows from the datasheet)
2 files changed
+365
README.md+34@@ -21,6 +21,40 @@ IHW40N135R5 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptio | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-emitter voltage | VCE | | | 1350 | V | Tvj ≥25°C | 3 |+| DC collector current | IC | | | 80 | A | Tc=25°C | 3 |+| DC collector current | IC | | | 40 | A | Tc=100°C | 3 |+| Pulsed collector current | ICpuls | | | 120 | A | tp limited by Tvjmax | 3 |+| Non repetitive peak collector current | ICSM | | | 200 | A | Footnote 1: capacitor charging saturation current limited by Tvjmax < 175°C and tp < 3µs | 3 |+| Turn off safe operating area | | | | 120 | A | VCE ≤1350V, Tvj ≤175°C, tp=1µs | 3 |+| Diode forward current | IF | | | 80 | A | Tc=25°C | 3 |+| Diode forward current | IF | | | 40 | A | Tc=100°C | 3 |+| Diode pulsed current | IFpuls | | | 120 | A | tp limited by Tvjmax | 3 |+| Gate-emitter voltage | VGE | -20 | | 20 | V | | 3 |+| Transient gate-emitter voltage | VGE | -25 | | 25 | V | tp ≤10µs, D<0.010 | 3 |+| Power dissipation | Ptot | | | 394 | W | Tc=25°C | 3 |+| Power dissipation | Ptot | | | 197 | W | Tc=100°C | 3 |+| Operating junction temperature | Tvj | -40 | | 175 | °C | | 3 |+| Storage temperature | Tstg | -55 | | 150 | °C | | 3 |+| Soldering temperature | | | | 260 | °C | Wave soldering 1.6mm (0.063in.) from case for 10s | 3 |+| Mounting torque | M | | | 0.6 | Nm | M3 screw; maximum of mounting processes: 3 | 3 |+| IGBT thermal resistance, junction - case | Rth(j-c) | | | 0.38 | K/W | | 3 |+| Diode thermal resistance, junction - case | Rth(j-c) | | | 0.38 | K/W | | 3 |+| Thermal resistance junction - ambient | Rth(j-a) | | | 40 | K/W | | 3 |+| Collector-emitter breakdown voltage | V(BR)CES | 1350 | | | V | VGE=0V, IC=0.50mA | 4 |+| Collector-emitter saturation voltage | VCEsat | | 1.65 | 1.95 | V | VGE=15.0V, IC=40.0A, Tvj=25°C | 4 |+| Diode forward voltage | VF | | 1.95 | 2.15 | V | VGE=0V, IF=40.0A, Tvj=25°C | 4 |+| Gate-emitter threshold voltage | VGE(th) | 5.1 | 5.8 | 6.4 | V | IC=1.00mA, VCE=VGE | 4 |+| Zero gate voltage collector current | ICES | | | 850 | µA | VCE=1350V, VGE=0V, Tvj=25°C | 4 |+| Zero gate voltage collector current | ICES | | | 100 | µA | VCE=1350V, VGE=0V, Tvj=175°C | 4 |+| Gate-emitter leakage current | IGES | | | 100 | nA | VCE=0V, VGE=20V | 4 |+ ## CAD (KiCad official) - Symbol: `IHW40N135R5`
page.json+331@@ -135,6 +135,337 @@ "Package": "TO-247-3", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "3ac66764ddd7f173",+ "rows": [+ {+ "name": "Collector-emitter voltage",+ "symbol": "VCE",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1350,+ "conditions": "Tvj ≥25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "DC collector current",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "Tc=25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "DC collector current",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "Tc=100°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Pulsed collector current",+ "symbol": "ICpuls",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "tp limited by Tvjmax",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive peak collector current",+ "symbol": "ICSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "Footnote 1: capacitor charging saturation current limited by Tvjmax < 175°C and tp < 3µs",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn off safe operating area",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "VCE ≤1350V, Tvj ≤175°C, tp=1µs",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode forward current",+ "symbol": "IF",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "Tc=25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode forward current",+ "symbol": "IF",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "Tc=100°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode pulsed current",+ "symbol": "IFpuls",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "tp limited by Tvjmax",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-emitter voltage",+ "symbol": "VGE",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Transient gate-emitter voltage",+ "symbol": "VGE",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -25,+ "typ": null,+ "max": 25,+ "conditions": "tp ≤10µs, D<0.010",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 394,+ "conditions": "Tc=25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 197,+ "conditions": "Tc=100°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature",+ "symbol": "Tvj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Soldering temperature",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "Wave soldering 1.6mm (0.063in.) from case for 10s",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Mounting torque",+ "symbol": "M",+ "kind": "absolute_maximum",+ "unit": "Nm",+ "min": null,+ "typ": null,+ "max": 0.6,+ "conditions": "M3 screw; maximum of mounting processes: 3",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "IGBT thermal resistance, junction - case",+ "symbol": "Rth(j-c)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 0.38,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode thermal resistance, junction - case",+ "symbol": "Rth(j-c)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 0.38,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction - ambient",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter breakdown voltage",+ "symbol": "V(BR)CES",+ "kind": "electrical",+ "unit": "V",+ "min": 1350,+ "typ": null,+ "max": null,+ "conditions": "VGE=0V, IC=0.50mA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter saturation voltage",+ "symbol": "VCEsat",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.65,+ "max": 1.95,+ "conditions": "VGE=15.0V, IC=40.0A, Tvj=25°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VF",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.95,+ "max": 2.15,+ "conditions": "VGE=0V, IF=40.0A, Tvj=25°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-emitter threshold voltage",+ "symbol": "VGE(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 5.1,+ "typ": 5.8,+ "max": 6.4,+ "conditions": "IC=1.00mA, VCE=VGE",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage collector current",+ "symbol": "ICES",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 850,+ "conditions": "VCE=1350V, VGE=0V, Tvj=25°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage collector current",+ "symbol": "ICES",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VCE=1350V, VGE=0V, Tvj=175°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-emitter leakage current",+ "symbol": "IGES",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VCE=0V, VGE=20V",+ "source_page": 4,+ "source": "datasheet"+ }+ ] } }, "variants": [],