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IHW20N140R5LXKSA1

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Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IHW20N140R5LXKSA1

Infineon Technologies · IGBT Transistors / Modules · TO-247-3

IHW20N140R5LXKSA1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGE = 0/15 V, maximum ±20 V continuous (±25 V transient for tp ≤ 10 µs), gate threshold 4 to 6.2 V at IC = 0.28 mA.
2 C passive Collector (also the body-diode cathode); VCE rated 1400 V, DC collector current 40 A at Tc = 25 °C and 38 A at Tc = 100 °C.
3 E passive Emitter (also the body-diode anode); power return, internal emitter inductance 13 nH measured 5 mm from the case.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCE 1400 V Tvj ≥ 25 °C 3
DC collector current IC 40 A limited by bondwire, Tc = 25 °C 3
DC collector current IC 38 A limited by bondwire, Tc = 100 °C 3
Pulsed collector current ICpulse 60 A tp limited by Tvjmax 3
Non repetitive peak collector current ICSM 200 A capacitor charging saturation current, Tvj < 175 °C, tp < 3 µs 3
Turn-off safe operating area VCE 60 A VCE ≤ 1400 V, Tvj ≤ 175 °C, dV/dt < 1 kV/µs 3
Gate-emitter voltage VGE -20 20 V 3
Transient gate-emitter voltage VGE -25 25 V tp ≤ 10 µs, D < 0.01 3
Power dissipation Ptot 211 W Tc = 25 °C 3
Power dissipation Ptot 106 W Tc = 100 °C 3
Diode forward current IF 40 A limited by bondwire, Tc = 25 °C 5
Diode pulsed current IFpulse 60 A tp limited by Tvjmax 5
Storage temperature Tstg -55 150 °C 3
Soldering temperature Tsold 260 °C wave soldering 1.6 mm (0.063 in.) from case for 10 s 3
Mounting torque M 0.6 Nm M3 screw, maximum of mounting processes 3
Operating junction temperature Tvj -40 175 °C 4
Collector-emitter breakdown voltage VBRCES 1400 V IC = 0.5 mA, VGE = 0 V 4
Collector-emitter saturation voltage VCEsat 1.7 1.9 V IC = 20 A, VGE = 15 V, Tvj = 25 °C 4
Collector-emitter saturation voltage VCEsat 1.9 V IC = 20 A, VGE = 15 V, Tvj = 125 °C 4
Collector-emitter saturation voltage VCEsat 2 V IC = 20 A, VGE = 15 V, Tvj = 175 °C 4
Collector-emitter saturation voltage VCEsat 1.55 1.75 V IC = 15 A, VGE = 15 V, Tvj = 25 °C 4
Collector-emitter saturation voltage VCEsat 1.7 V IC = 15 A, VGE = 15 V, Tvj = 125 °C 4
Collector-emitter saturation voltage VCEsat 1.75 V IC = 15 A, VGE = 15 V, Tvj = 175 °C 4
Gate-emitter threshold voltage VGEth 4 5.6 6.2 V IC = 0.28 mA, VCE = VGE 4
Zero gate-voltage collector current ICES 100 µA VCE = 1400 V, VGE = 0 V, Tvj = 25 °C 4
Zero gate-voltage collector current ICES 460 µA VCE = 1400 V, VGE = 0 V, Tvj = 175 °C 4
Gate-emitter leakage current IGES 100 nA VCE = 0 V, VGE = 20 V 4
Diode forward voltage VF 1.6 1.9 V IF = 20 A, Tvj = 25 °C 5
Diode forward voltage VF 1.8 V IF = 20 A, Tvj = 125 °C 5
Diode forward voltage VF 1.85 V IF = 20 A, Tvj = 175 °C 5
Diode forward voltage VF 1.5 1.8 V IF = 15 A, Tvj = 25 °C 5
Diode forward voltage VF 1.6 V IF = 15 A, Tvj = 125 °C 5
Diode forward voltage VF 1.65 V IF = 15 A, Tvj = 175 °C 5
Thermal resistance, junction-ambient Rth(j-a) 40 K/W junction-ambient 3
IGBT thermal resistance, junction-case Rth(j-c) 0.71 K/W IGBT, junction-case 3
Diode thermal resistance, junction-case Rth(j-c) 0.71 K/W diode, junction-case 3
Internal emitter inductance LE 13 nH measured 5 mm (0.197 in.) from case 3
Transconductance gfs 17.8 S IC = 20 A, VCE = 20 V 4
Input capacitance Cies 870 pF VCE = 25 V, VGE = 0 V, f = 100 kHz 4
Output capacitance Coes 28 pF VCE = 25 V, VGE = 0 V, f = 100 kHz 4
Reverse transfer capacitance Cres 22 pF VCE = 25 V, VGE = 0 V, f = 100 kHz 4
Gate charge QG 125 nC VCC = 1120 V, IC = 20 A, VGE = 15 V 4
Turn-off delay time td(off) 150 ns VGE = 0/15 V, RG(off) = 10 Ω, Cr = 270 nF, L = 77 µH, R = 2.2 Ω, Tvj = 25 °C, IC = 20 A 4
Turn-off delay time td(off) 160 ns VGE = 0/15 V, RG(off) = 10 Ω, Cr = 270 nF, L = 77 µH, R = 2.2 Ω, Tvj = 175 °C, IC = 20 A 4
Fall time (inductive load) tf 1090 ns VGE = 0/15 V, RG(off) = 10 Ω, Cr = 270 nF, L = 77 µH, R = 2.2 Ω, Tvj = 25 °C, IC = 20 A 4
Fall time (inductive load) tf 1890 ns VGE = 0/15 V, RG(off) = 10 Ω, Cr = 270 nF, L = 77 µH, R = 2.2 Ω, Tvj = 175 °C, IC = 20 A 4
Soft turn-off energy Eoff 0.07 mJ VGE = 0/15 V, RG(off) = 10 Ω, Cr = 270 nF, L = 77 µH, R = 2.2 Ω, Tvj = 25 °C, IC = 20 A 4
Soft turn-off energy Eoff 0.17 mJ VGE = 0/15 V, RG(off) = 10 Ω, Cr = 270 nF, L = 77 µH, R = 2.2 Ω, Tvj = 175 °C, IC = 20 A 4

CAD (KiCad official)

  • Symbol: IHW20N140R5LXKSA1
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ihw20n140r5lxksa1-etched.step / ihw20n140r5lxksa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ihw20n140r5lxksa1.step / ihw20n140r5lxksa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 79b89bed133cf959, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF