# IDW30C65D1

**Infineon Technologies** · Diodes - General Purpose · TO-247-3

IDW30C65D1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of diode leg 1 (A1); each leg is rated 650V VRRM and 15A IF at TC=100°C. |
| 2 | C | passive | Common cathode (C) of both diode legs, also connected to the backside (tab) of the package. |
| 3 | A2 | passive | Anode of diode leg 2 (A2); each leg is rated 650V VRRM and 15A IF at TC=100°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Diodes |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Diode forward voltage | VF |  | 1.35 | 1.7 | V | IF=15.0A, Tvj=25°C | 4 |
| Diode forward voltage | VF |  | 1.3 |  | V | IF=15.0A, Tvj=125°C | 4 |
| Diode forward voltage | VF |  | 1.26 |  | V | IF=15.0A, Tvj=175°C | 4 |
| Reverse leakage current | IR |  |  | 600 | µA | VR=650V, Tvj=25°C | 4 |
| Reverse leakage current | IR |  | 40 |  | µA | VR=650V, Tvj=175°C | 4 |
| Repetitive peak reverse voltage | VRRM |  |  | 650 | V | Tvj ≥25°C | 4 |
| Diode forward current | IF |  |  | 30 | A | TC=25°C, limited by Tvjmax | 4 |
| Diode forward current | IF |  |  | 15 | A | TC=100°C, limited by Tvjmax | 4 |
| Diode pulsed current | IFpuls |  |  | 45 | A | tp limited by Tvjmax | 4 |
| Diode surge non repetitive forward current | IFSM |  |  | 120 | A | TC=25°C, tp=10.0ms, sine half wave | 4 |
| Power dissipation | Ptot |  |  | 92 | W | TC=25°C | 4 |
| Power dissipation | Ptot |  |  | 46 | W | TC=100°C | 4 |
| Operating junction temperature | Tvj | -40 |  | 175 | °C |  | 4 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 4 |
| Soldering temperature |  |  |  | 260 | °C | wave soldering 1.6mm (0.063in.) from case for 10s | 4 |
| Mounting torque | M |  |  | 0.6 | Nm | M3 screw, maximum of mounting processes: 3 | 4 |
| Diode thermal resistance, junction - case | Rth(j-c) |  |  | 1.64 | K/W |  | 4 |
| Thermal resistance junction - ambient | Rth(j-a) |  |  | 40 | K/W |  | 4 |
| Internal emitter inductance | LE |  | 13 |  | nH | measured 5mm (0.197 in.) from case | 4 |
| Diode reverse recovery time | trr |  | 71 |  | ns | Tvj=25°C, VR=400V, IF=15.0A, diF/dt=1000A/µs | 5 |
| Diode reverse recovery charge | Qrr |  | 0.37 |  | µC | Tvj=25°C, VR=400V, IF=15.0A, diF/dt=1000A/µs | 5 |
| Diode peak reverse recovery current | Irrm |  | 8.6 |  | A | Tvj=25°C, VR=400V, IF=15.0A, diF/dt=1000A/µs | 5 |
| Peak rate of fall of reverse recovery current | dirr/dt |  | -810 |  | A/µs | Tvj=25°C, VR=400V, IF=15.0A, diF/dt=1000A/µs | 5 |
| Diode reverse recovery time | trr |  | 114 |  | ns | Tvj=25°C, VR=400V, IF=15.0A, diF/dt=200A/µs | 5 |
| Diode reverse recovery charge | Qrr |  | 0.28 |  | µC | Tvj=25°C, VR=400V, IF=15.0A, diF/dt=200A/µs | 5 |
| Diode peak reverse recovery current | Irrm |  | 3.4 |  | A | Tvj=25°C, VR=400V, IF=15.0A, diF/dt=200A/µs | 5 |
| Peak rate of fall of reverse recovery current | dirr/dt |  | -150 |  | A/µs | Tvj=25°C, VR=400V, IF=15.0A, diF/dt=200A/µs | 5 |
| Diode reverse recovery time | trr |  | 95 |  | ns | Tvj=175°C, VR=400V, IF=15.0A, diF/dt=1000A/µs | 5 |
| Diode reverse recovery charge | Qrr |  | 0.91 |  | µC | Tvj=175°C, VR=400V, IF=15.0A, diF/dt=1000A/µs | 5 |
| Diode peak reverse recovery current | Irrm |  | 14.1 |  | A | Tvj=175°C, VR=400V, IF=15.0A, diF/dt=1000A/µs | 5 |
| Peak rate of fall of reverse recovery current | dirr/dt |  | -720 |  | A/µs | Tvj=175°C, VR=400V, IF=15.0A, diF/dt=1000A/µs | 5 |
| Diode reverse recovery time | trr |  | 146 |  | ns | Tvj=125°C, VR=400V, IF=15.0A, diF/dt=200A/µs | 5 |
| Diode reverse recovery charge | Qrr |  | 0.52 |  | µC | Tvj=125°C, VR=400V, IF=15.0A, diF/dt=200A/µs | 5 |
| Diode peak reverse recovery current | Irrm |  | 4.7 |  | A | Tvj=125°C, VR=400V, IF=15.0A, diF/dt=200A/µs | 5 |
| Peak rate of fall of reverse recovery current | dirr/dt |  | -230 |  | A/µs | Tvj=125°C, VR=400V, IF=15.0A, diF/dt=200A/µs | 5 |

## CAD (KiCad official)

- Symbol: `IDW30C65D1`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `idw30c65d1-etched.step` / `idw30c65d1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `idw30c65d1.step` / `idw30c65d1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](docs/idw30c65d1-datasheet.pdf) (11 pp, sha256 `92737760ec371881`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/idw30c65d1-datasheet.pdf)