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IDW30C65D1
Public Made by Adomby adom
Infineon Technologies Diodes - General Purpose, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIDW30C65D1
Infineon Technologies · Diodes - General Purpose · TO-247-3
IDW30C65D1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of diode leg 1 (A1); each leg is rated 650V VRRM and 15A IF at TC=100°C. |
| 2 | C | passive | Common cathode (C) of both diode legs, also connected to the backside (tab) of the package. |
| 3 | A2 | passive | Anode of diode leg 2 (A2); each leg is rated 650V VRRM and 15A IF at TC=100°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Diode forward voltage | VF | 1.35 | 1.7 | V | IF=15.0A, Tvj=25°C | 4 | |
| Diode forward voltage | VF | 1.3 | V | IF=15.0A, Tvj=125°C | 4 | ||
| Diode forward voltage | VF | 1.26 | V | IF=15.0A, Tvj=175°C | 4 | ||
| Reverse leakage current | IR | 600 | µA | VR=650V, Tvj=25°C | 4 | ||
| Reverse leakage current | IR | 40 | µA | VR=650V, Tvj=175°C | 4 | ||
| Repetitive peak reverse voltage | VRRM | 650 | V | Tvj ≥25°C | 4 | ||
| Diode forward current | IF | 30 | A | TC=25°C, limited by Tvjmax | 4 | ||
| Diode forward current | IF | 15 | A | TC=100°C, limited by Tvjmax | 4 | ||
| Diode pulsed current | IFpuls | 45 | A | tp limited by Tvjmax | 4 | ||
| Diode surge non repetitive forward current | IFSM | 120 | A | TC=25°C, tp=10.0ms, sine half wave | 4 | ||
| Power dissipation | Ptot | 92 | W | TC=25°C | 4 | ||
| Power dissipation | Ptot | 46 | W | TC=100°C | 4 | ||
| Operating junction temperature | Tvj | -40 | 175 | °C | 4 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 4 | ||
| Soldering temperature | 260 | °C | wave soldering 1.6mm (0.063in.) from case for 10s | 4 | |||
| Mounting torque | M | 0.6 | Nm | M3 screw, maximum of mounting processes: 3 | 4 | ||
| Diode thermal resistance, junction - case | Rth(j-c) | 1.64 | K/W | 4 | |||
| Thermal resistance junction - ambient | Rth(j-a) | 40 | K/W | 4 | |||
| Internal emitter inductance | LE | 13 | nH | measured 5mm (0.197 in.) from case | 4 | ||
| Diode reverse recovery time | trr | 71 | ns | Tvj=25°C, VR=400V, IF=15.0A, diF/dt=1000A/µs | 5 | ||
| Diode reverse recovery charge | Qrr | 0.37 | µC | Tvj=25°C, VR=400V, IF=15.0A, diF/dt=1000A/µs | 5 | ||
| Diode peak reverse recovery current | Irrm | 8.6 | A | Tvj=25°C, VR=400V, IF=15.0A, diF/dt=1000A/µs | 5 | ||
| Peak rate of fall of reverse recovery current | dirr/dt | -810 | A/µs | Tvj=25°C, VR=400V, IF=15.0A, diF/dt=1000A/µs | 5 | ||
| Diode reverse recovery time | trr | 114 | ns | Tvj=25°C, VR=400V, IF=15.0A, diF/dt=200A/µs | 5 | ||
| Diode reverse recovery charge | Qrr | 0.28 | µC | Tvj=25°C, VR=400V, IF=15.0A, diF/dt=200A/µs | 5 | ||
| Diode peak reverse recovery current | Irrm | 3.4 | A | Tvj=25°C, VR=400V, IF=15.0A, diF/dt=200A/µs | 5 | ||
| Peak rate of fall of reverse recovery current | dirr/dt | -150 | A/µs | Tvj=25°C, VR=400V, IF=15.0A, diF/dt=200A/µs | 5 | ||
| Diode reverse recovery time | trr | 95 | ns | Tvj=175°C, VR=400V, IF=15.0A, diF/dt=1000A/µs | 5 | ||
| Diode reverse recovery charge | Qrr | 0.91 | µC | Tvj=175°C, VR=400V, IF=15.0A, diF/dt=1000A/µs | 5 | ||
| Diode peak reverse recovery current | Irrm | 14.1 | A | Tvj=175°C, VR=400V, IF=15.0A, diF/dt=1000A/µs | 5 | ||
| Peak rate of fall of reverse recovery current | dirr/dt | -720 | A/µs | Tvj=175°C, VR=400V, IF=15.0A, diF/dt=1000A/µs | 5 | ||
| Diode reverse recovery time | trr | 146 | ns | Tvj=125°C, VR=400V, IF=15.0A, diF/dt=200A/µs | 5 | ||
| Diode reverse recovery charge | Qrr | 0.52 | µC | Tvj=125°C, VR=400V, IF=15.0A, diF/dt=200A/µs | 5 | ||
| Diode peak reverse recovery current | Irrm | 4.7 | A | Tvj=125°C, VR=400V, IF=15.0A, diF/dt=200A/µs | 5 | ||
| Peak rate of fall of reverse recovery current | dirr/dt | -230 | A/µs | Tvj=125°C, VR=400V, IF=15.0A, diF/dt=200A/µs | 5 |
CAD (KiCad official)
- Symbol:
IDW30C65D1 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
idw30c65d1-etched.step/idw30c65d1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);idw30c65d1.step/idw30c65d1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (11 pp, sha256
92737760ec371881, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).