# IDH08SG60C

**Infineon Technologies** · SiC Diodes · TO-220-2

IDH08SG60C from Infineon Technologies, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Cathode of the thinQ! 3G SiC Schottky diode, with repetitive peak reverse voltage VRRM of 600 V at Tj=25 °C. |
| 2 | A | passive | Anode of the thinQ! 3G SiC Schottky diode, with continuous forward current IF of 8 A at TC<130 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220-2 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous forward current | IF |  |  | 8 | A | TC<130 °C | 1 |
| Non-repetitive peak forward current | IF,SM |  |  | 42 | A | TC=25 °C, tp=10 ms | 1 |
| Non-repetitive peak forward current | IF,SM |  |  | 36 | A | TC=150 °C, tp=10 ms | 1 |
| Non-repetitive peak forward current | IF,max |  |  | 350 | A | TC=25 °C, tp=10 µs | 1 |
| i2t value | ∫i²dt |  |  | 9 | A²s | TC=25 °C, tp=10 ms | 1 |
| i2t value | ∫i²dt |  |  | 6.5 | A²s | TC=150 °C, tp=10 ms | 1 |
| Repetitive peak reverse voltage | VRRM |  |  | 600 | V | Tj=25 °C | 1 |
| Diode dv/dt ruggedness | dv/dt |  |  | 50 | V/ns | VR= 0….480 V | 1 |
| Power dissipation | Ptot |  |  | 100 | W | TC=25 °C | 1 |
| Operating and storage temperature | Tj, Tstg | -55 |  | 175 | °C |  | 1 |
| Soldering temperature, wavesoldering only allowed at leads | Tsold |  |  | 260 | °C | 1.6mm (0.063 in.) from case for 10s | 1 |
| Mounting torque |  |  |  | 60 | Ncm | M3 and M3.5 screws | 1 |
| Thermal resistance, junction - case | RthJC |  |  | 1.5 | K/W |  | 2 |
| Thermal resistance, junction - ambient, leaded | RthJA |  |  | 62 | K/W | leaded | 2 |
| DC blocking voltage | VDC | 600 |  |  | V | IR=0.05 mA, Tj=25 °C | 2 |
| Diode forward voltage | VF |  | 1.8 | 2.1 | V | IF=8 A, Tj=25 °C | 2 |
| Reverse current | IR |  | 0.6 | 70 | µA | VR=600 V, Tj=25 °C | 2 |
| Reverse current | IR |  | 2.5 | 700 | µA | VR=600 V, Tj=150 °C | 2 |
| Switching time | tc |  |  | 10 | ns |  | 2 |

## CAD (KiCad official)

- Symbol: `IDH08SG60C`
- Footprint: `Package_TO_SOT_THT:TO-220-2_Vertical`
- 3D model: TO-220-2 (KiCad packages3D, STEP)
- 3D model files: `idh08sg60c-etched.step` / `idh08sg60c-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `idh08sg60c.step` / `idh08sg60c.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](docs/idh08sg60c-datasheet.pdf) (7 pp, sha256 `205d31a1b3a36eaa`, retrieved 2026-11-02, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/idh08sg60c-datasheet.pdf)