component

IDH08SG60C

Public Made by Adom

by adom

Infineon Technologies SiC Diodes, TO-220-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) devicesidh08sg60cfactory-2.0.0extractor-text

Changed since verified IDH08SG60C

by Ray · last 2 Nov 2026 · 1 record · files changed since
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 2 pinschanged since
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IDH08SG60C · TO-220-2 · 2 pins
  • ✓copper: 2 copper pads, none touching another net
  • ✓datasheet: all 2 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey'] number
  • ✓family: TO-220-2_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-30o8wjg2/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 2 pins = 2 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 2 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files! idh08sg60c.kicad_sym✓ idh08sg60c.kicad_mod✓ idh08sg60c.step
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Made with kicad-footprint-generator 10.0 · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 2d ago
viewers idh08sg60c: symbol repaired (D, cathode pad 1) · Ray 4h ago
idh08sg60c-etched.glb Publish 0.1.0 · Ray 2d ago
idh08sg60c-etched.step idh08sg60c: factory component page (tier=lcsc) · Ray 2d ago
idh08sg60c-hero.glb idh08sg60c: hero GLB from the etched model (keeps the MPN mark) · Ray 2d ago
idh08sg60c-hero.overlay.json Publish 0.1.0 · Ray 2d ago
idh08sg60c.glb Publish 0.1.0 · Ray 2d ago
idh08sg60c.kicad_mod Publish 0.1.0 · Ray 2d ago
idh08sg60c.kicad_sym idh08sg60c: symbol repaired (D, cathode pad 1) · Ray 4h ago
idh08sg60c.lbr idh08sg60c: symbol repaired (D, cathode pad 1) · Ray 4h ago
idh08sg60c.step Publish 0.1.0 · Ray 2d ago
package.json Publish 0.1.0 · Ray 2d ago
page.json Set visibility: public · Ray 2d ago
README.md Publish 0.1.0 · Ray 2d ago
verification.json Verified: Published by the parts factory: tier lcsc, 2 pins · Ray 2d ago

IDH08SG60C

Infineon Technologies · SiC Diodes · TO-220-2

IDH08SG60C from Infineon Technologies, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C passive Cathode of the thinQ! 3G SiC Schottky diode, with repetitive peak reverse voltage VRRM of 600 V at Tj=25 °C.
2 A passive Anode of the thinQ! 3G SiC Schottky diode, with continuous forward current IF of 8 A at TC<130 °C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220-2
Category Silicon Carbide (SiC) Devices
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous forward current IF 8 A TC<130 °C 1
Non-repetitive peak forward current IF,SM 42 A TC=25 °C, tp=10 ms 1
Non-repetitive peak forward current IF,SM 36 A TC=150 °C, tp=10 ms 1
Non-repetitive peak forward current IF,max 350 A TC=25 °C, tp=10 µs 1
i2t value ∫i²dt 9 A²s TC=25 °C, tp=10 ms 1
i2t value ∫i²dt 6.5 A²s TC=150 °C, tp=10 ms 1
Repetitive peak reverse voltage VRRM 600 V Tj=25 °C 1
Diode dv/dt ruggedness dv/dt 50 V/ns VR= 0….480 V 1
Power dissipation Ptot 100 W TC=25 °C 1
Operating and storage temperature Tj, Tstg -55 175 °C 1
Soldering temperature, wavesoldering only allowed at leads Tsold 260 °C 1.6mm (0.063 in.) from case for 10s 1
Mounting torque 60 Ncm M3 and M3.5 screws 1
Thermal resistance, junction - case RthJC 1.5 K/W 2
Thermal resistance, junction - ambient, leaded RthJA 62 K/W leaded 2
DC blocking voltage VDC 600 V IR=0.05 mA, Tj=25 °C 2
Diode forward voltage VF 1.8 2.1 V IF=8 A, Tj=25 °C 2
Reverse current IR 0.6 70 µA VR=600 V, Tj=25 °C 2
Reverse current IR 2.5 700 µA VR=600 V, Tj=150 °C 2
Switching time tc 10 ns 2

CAD (KiCad official)

  • Symbol: IDH08SG60C
  • Footprint: Package_TO_SOT_THT:TO-220-2_Vertical
  • 3D model: TO-220-2 (KiCad packages3D, STEP)
  • 3D model files: idh08sg60c-etched.step / idh08sg60c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); idh08sg60c.step / idh08sg60c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (7 pp, sha256 205d31a1b3a36eaa, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF