# IDH03SG60CXKSA2

**Infineon Technologies** · SiC Diodes · TO-220-2

IDH03SG60CXKSA2 from Infineon Technologies, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Cathode of the SiC Schottky diode (Pin 1 per product summary); repetitive peak reverse voltage 600 V, continuous forward current 3 A at TC<130 °C. |
| 2 | A | passive | Anode of the SiC Schottky diode (Pin 2 per product summary); forward voltage typically 2.1 V at IF=3 A, Tj=25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220-2 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC blocking voltage | VDC | 600 |  |  | V | IR=0.05 mA, Tj=25 °C | 2 |
| Diode forward voltage | VF |  | 2.1 | 2.3 | V | IF=3 A, Tj=25 °C | 2 |
| Diode forward voltage | VF |  | 2.8 |  | V | IF=3 A, Tj=150 °C | 2 |
| Reverse current | IR |  | 0.23 | 15 | µA | VR=600 V, Tj=25 °C | 2 |
| Reverse current | IR |  | 1 | 150 | µA | VR=600 V, Tj=150 °C | 2 |
| Switching time | tc |  |  | 10 | ns | VR=400 V, IF≤IF,max, diF/dt=200 A/µs, Tj=150 °C | 2 |
| Thermal resistance, junction - case | RthJC |  |  | 3.9 | K/W |  | 2 |
| Thermal resistance, junction - ambient, leaded | RthJA |  |  | 62 | K/W |  | 2 |
| Continuous forward current | IF |  |  | 3 | A | TC<130 °C | 1 |
| Surge non-repetitive forward current, sine halfwave | IF,SM |  |  | 11.5 | A | TC=25 °C, tp=10 ms | 1 |
| Surge non-repetitive forward current, sine halfwave | IF,SM |  |  | 9.7 | A | TC=150 °C, tp=10 ms | 1 |
| Non-repetitive peak forward current | IF,max |  |  | 100 | A | TC=25 °C, tp=10 µs | 1 |
| i²t value | ∫i²dt |  |  | 0.61 | A²s | TC=25 °C, tp=10 ms | 1 |
| i²t value | ∫i²dt |  |  | 0.44 | A²s | TC=150 °C, tp=10 ms | 1 |
| Repetitive peak reverse voltage | VRRM |  |  | 600 | V | Tj=25 °C | 1 |
| Diode dv/dt ruggedness | dv/dt |  |  | 50 | V/ns | VR=0….480 V | 1 |
| Power dissipation | Ptot |  |  | 38 | W | TC=25 °C | 1 |
| Operating and storage temperature | Tj, Tstg | -55 |  | 175 | °C |  | 1 |
| Soldering temperature, wavesoldering | Tsold |  |  | 260 | °C | 1.6mm (0.063 in.) from case for 10s | 1 |
| Mounting torque |  |  |  | 60 | Ncm | M3 and M3.5 screws | 1 |
| Total capacitive charge | Qc |  | 3.2 |  | nC |  | 2 |
| Total capacitance | C |  | 60 |  | pF | VR=1 V, f=1 MHz | 2 |
| Total capacitance | C |  | 8 |  | pF | VR=300 V, f=1 MHz | 2 |

## CAD (KiCad official)

- Symbol: `IDH03SG60CXKSA2`
- Footprint: `Package_TO_SOT_THT:TO-220-2_Vertical`
- 3D model: TO-220-2 (KiCad packages3D, STEP)
- 3D model files: `idh03sg60cxksa2-etched.step` / `idh03sg60cxksa2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `idh03sg60cxksa2.step` / `idh03sg60cxksa2.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](docs/idh03sg60cxksa2-datasheet.pdf) (7 pp, sha256 `d02df5393dfab56f`, retrieved 2026-10-31, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/idh03sg60cxksa2-datasheet.pdf)