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ICE1HS01G1XUMA1

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Infineon Technologies Buffer/Driver/Transceiver, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ICE1HS01G1XUMA1

Infineon Technologies · Buffer/Driver/Transceiver · SOIC-8

ICE1HS01G1XUMA1 from Infineon Technologies, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 FMIN passive A resistor to ground sets the current out of this pin (pin held at 1.5V), which determines the minimum switching frequency and also the maximum and soft-start frequencies; max source current 2.5 mA, voltage -0.3 to 5 V.
2 CS input Current sense input with two comparators: above about 0.8V (VCSL) the switching frequency is raised, above about 1.63V (VCSH) the IC latches off; voltage -0.3 to 5 V.
3 FB input Feedback input from the optocoupler collector with internal pull-up RFB (20 kohm typ.) that adjusts switching frequency over 0.9V to 3.9V and triggers overload/open-loop protection above VFBH (4.5V); voltage -0.3 to 5 V.
4 VINS input Mains input voltage sense via resistive divider with turn-on threshold of 1.25V typ. and hysteresis current Ihys (12 uA typ.), and a capacitor here sets the restart time after overload protection; voltage -0.3 to 5 V.
5 GND power_in IC common ground, reference for all voltages.
6 LG output Low-side power MOSFET gate driver output with 50% duty cycle and 380 ns dead time, voltage -0.3 to 18 V.
7 HG output High-side power MOSFET gate driver output with 50% duty cycle and 380 ns dead time, voltage -0.3 to 18 V.
8 VCC power_in IC supply voltage with turn-on threshold of 12V typ., turn-off about 11V, operating range 10.2V to 18V, absolute maximum 20.5V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOIC-8
Category Logic ICs
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
HG Voltage VLG -0.3 18 V 12
LG Voltage VLG -0.3 18 V 12
CS voltage VCS -0.3 5 V 12
FB voltage VFB -0.3 5 V 12
VINS voltage VVINS -0.3 5 V 12
FMIN voltage VFMIN -0.3 5 V 12
Maximum source current on FMIN IFMIN 2.5 mA 12
Junction Temperature Tj -40 125 °C 12
Storage Temperature TS -55 150 °C 12
Thermal Resistance Junction-Ambient RthJA(DSO) 185 K/W PG-DSO-8 12
ESD Capability VESD 2 kV Human body model 12
VCC Supply Voltage (operating) VVCC 10.2 18 V 12
Junction Temperature (operating) TjCon -25 125 °C 12
Start up Current IVCCstart 200 350 530 mA VVCCon-0.1V 13
Supply Current in operation with inactive gate IVCCop 3 mA no switching; 13
Supply Current in normal operation with active gate IVCCactive 5.8 mA Freq=50kHz RFMIN=30kW VFB=4.2V, VCS=0V CL=2.2nF,VVCC=15V 13
VCC Turn-On Threshold VVCCon 11.3 12 12.7 V 13
VCC Hysteresis VVCChys 0.68 0.95 1.25 V 13
Trimmed Reference Voltage VREF 4.9 5 5.1 V IFB=0 13
Minimum switching frequency FMIN 47 50 53 kHz RFMIN=30kW; 13
Maximum switching frequency during normal operation FMAX_N 128 kHz RFMIN=30kW;VFB=0.6V, VCS=0V, after softstart 13
Maximum switching frequency during protection FMAX_P 203 kHz RFMIN=30kW;VFB=0.6V, VCS=1V 13
Absolute Maximum switching frequency FMAX_abs 609 kHz RFMIN=4.8kW, VFB=0.9V, VCS=1V, soft start first cycle 13
Reference voltage on FMIN VOSCRef 1.44 1.5 1.56 V 13
Dead time Td 340 380 420 ns RFMIN=30kW;VFB=0.6V, VCS=0V 13
Oscillation duty cycle D 48 50 52 % based on calculation 13
Input voltage on threshold VVINSon 1.2 1.25 1.3 V 14
Bias current on VINS pin Ihys 9 12 15 mA 14
Blanking time for leaving mains undervoltage protection TVINS_out 500 ms 14
Blanking time for entering mains under voltage protection TVINS_in 50 ms 14
Overcurrent protection low VCSL 0.75 0.8 0.85 V 14
Hysteresis voltage for overcurrent protection low 50 mV 14
Overcurrent protection high VCSH 1.57 1.63 1.7 V 14
Blanking time for OCP latch TOCP_L 300 ns 14
Maximum switching frequency during over current protection FMAX_C 163 kHz RFMIN=30kW;VFB=4.2V, VCS=1V, after soft start and 2ms after VCS higher than 0.8V 14
Blanking time after each gate is turned on TLEB 250 ns 14
Pull up resistance RFB 15 20 25 kW 15
Soft start frequency Fss_step 184 kHz RFMIN=30kW; Td=380ns; first cycle softstart 15
Output voltage at logic low VGATElow 1.5 V VVCC=5V, IOUT = 20mA 16
GATE current, Peak Rising Edge IGATE_R 1 A CL = 2.2nF1) 16
GATE current, Peak Falling Edge IGATE_F 1.5 A CL = 2.2nF1) 16
Output voltage at logic high VGATEhigh 9 V VVCC=VVCCoff+0.2V CL=2.2nF 16
Output voltage active shut down VGATEasd 1 V VVCC = 5V, IOUT = 20mA 16
Rise Time trise 100 ns CL = 2.2nF 16
Fall Time tfall 25 ns CL = 2.2nF 16

CAD (KiCad official)

  • Symbol: ICE1HS01G1XUMA1
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ice1hs01g1xuma1-etched.step / ice1hs01g1xuma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ice1hs01g1xuma1.step / ice1hs01g1xuma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (19 pp, sha256 5b7c8a46b5f53a49, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF