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HYG200P10LR1B

Public Made by Adom

by adom

HUAYI MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HYG200P10LR1B

HUAYI · MOSFETs · TO-263-2L

HYG200P10LR1B from HUAYI, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is limited to ±20 V (VGSS), with threshold of -1 V min to -3 V max at IDS = -250 µA.
2 D passive Drain, brought out on the exposed tab (middle lead position absent); rated -100 V VDSS and -80 A continuous at Tc=25°C.
3 S passive Source; continuous body-diode source current is -80 A at Tc=25°C.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-263-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -100 V 2
Gate-Source Voltage VGSS -20 20 V 2
Maximum Junction Temperature TJ 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Source Current-Continuous (Body Diode) IS -80 A Tc=25°C 2
Pulsed Drain Current IDM -230 A Tc=25°C 2
Continuous Drain Current ID -80 A Tc=25°C 2
Continuous Drain Current ID -56.6 A Tc=100°C 2
Maximum Power Dissipation PD 214 W Tc=25°C 2
Maximum Power Dissipation PD 107 W Tc=100°C 2
Thermal Resistance, Junction-to-Case RJC 0.7 °C/W 2
Thermal Resistance, Junction-to-Ambient RJA 62.5 °C/W Surface mounted on 1in2 FR-4 board 2
Single Pulsed Avalanche Energy EAS 308 mJ L=0.3mH 2
Drain-Source Breakdown Voltage BVDSS -100 V VGS=0V,IDS= -250μA 2
Drain-to-Source Leakage Current IDSS -1 μA VDS= -100V,VGS=0V 2
Drain-to-Source Leakage Current IDSS -50 μA TJ=125°C 2
Gate Threshold Voltage VGS(th) -1 -1.8 -3 V VDS=VGS, IDS= -250μA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 20 28 mΩ VGS= -10V,IDS= -40A 2
Drain-Source On-State Resistance RDS(ON) 24 32 mΩ VGS= -4.5V,IDS=-40A 2
Diode Forward Voltage VSD -0.86 -1.3 V ISD= -40A,VGS=0V 2

CAD (KiCad official)

  • Symbol: HYG200P10LR1B
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263-2L (KiCad packages3D, STEP)
  • 3D model files: hyg200p10lr1b-etched.step / hyg200p10lr1b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg200p10lr1b.step / hyg200p10lr1b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (10 pp, sha256 4b47e075e703b8d0, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF