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Generated by kicad-footprint-generator · KiCad file format 20260206

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hyg200p10lr1b-etched.glb	Publish 0.1.0 · Ray	17d ago
hyg200p10lr1b-etched.step	hyg200p10lr1b: factory component page (tier=lcsc) · Ray	17d ago
hyg200p10lr1b-hero.glb	hyg200p10lr1b: hero GLB from the etched model (keeps the MPN mark) · Ray	17d ago
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hyg200p10lr1b.lbr	Publish 0.1.0 · Ray	17d ago
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HYG200P10LR1B

HUAYI · MOSFETs · TO-263-2L

HYG200P10LR1B from HUAYI, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; gate-source voltage is limited to ±20 V (VGSS), with threshold of -1 V min to -3 V max at IDS = -250 µA.
2	D	passive	Drain, brought out on the exposed tab (middle lead position absent); rated -100 V VDSS and -80 A continuous at Tc=25°C.
3	S	passive	Source; continuous body-diode source current is -80 A at Tc=25°C.

Key specifications

Parameter	Value
Manufacturer	HUAYI
Package	TO-263-2L
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDSS			-100	V		2
Gate-Source Voltage	VGSS	-20		20	V		2
Maximum Junction Temperature	TJ			175	°C		2
Storage Temperature Range	TSTG	-55		175	°C		2
Source Current-Continuous (Body Diode)	IS			-80	A	Tc=25°C	2
Pulsed Drain Current	IDM			-230	A	Tc=25°C	2
Continuous Drain Current	ID			-80	A	Tc=25°C	2
Continuous Drain Current	ID			-56.6	A	Tc=100°C	2
Maximum Power Dissipation	PD			214	W	Tc=25°C	2
Maximum Power Dissipation	PD			107	W	Tc=100°C	2
Thermal Resistance, Junction-to-Case	RJC			0.7	°C/W		2
Thermal Resistance, Junction-to-Ambient	RJA			62.5	°C/W	Surface mounted on 1in2 FR-4 board	2
Single Pulsed Avalanche Energy	EAS			308	mJ	L=0.3mH	2
Drain-Source Breakdown Voltage	BVDSS	-100			V	VGS=0V,IDS= -250μA	2
Drain-to-Source Leakage Current	IDSS			-1	μA	VDS= -100V,VGS=0V	2
Drain-to-Source Leakage Current	IDSS			-50	μA	TJ=125°C	2
Gate Threshold Voltage	VGS(th)	-1	-1.8	-3	V	VDS=VGS, IDS= -250μA	2
Gate-Source Leakage Current	IGSS	-100		100	nA	VGS=±20V,VDS=0V	2
Drain-Source On-State Resistance	RDS(ON)		20	28	mΩ	VGS= -10V,IDS= -40A	2
Drain-Source On-State Resistance	RDS(ON)		24	32	mΩ	VGS= -4.5V,IDS=-40A	2
Diode Forward Voltage	VSD		-0.86	-1.3	V	ISD= -40A,VGS=0V	2

CAD (KiCad official)

Symbol: HYG200P10LR1B
Footprint: Package_TO_SOT_SMD:TO-263-2
3D model: TO-263-2L (KiCad packages3D, STEP)
3D model files: hyg200p10lr1b-etched.step / hyg200p10lr1b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg200p10lr1b.step / hyg200p10lr1b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: HUAYI datasheet (10 pp, sha256 4b47e075e703b8d0, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF