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HYG053N10NS1D

Public Made by Adom

by adom

HUAYI MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HYG053N10NS1D

HUAYI · MOSFETs · TO-252-2L

HYG053N10NS1D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±20 V absolute maximum, with a typical threshold of 3 V (2.2 V min to 3.8 V max at 250 µA).
2 D passive Drain, shown as the middle terminal (G D S) in the TO-252-2L drawing; drain-source voltage is rated at 100 V and continuous drain current at 95 A at Tc=25°C.
3 S passive Source; continuous body-diode source current is rated at 95 A at Tc=25°C.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, IDS=250μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS=100V, VGS=0V 2
Drain-to-Source Leakage Current IDSS 50 μA TJ=125°C 2
Gate Threshold Voltage VGS(th) 2.2 3 3.8 V VDS=VGS, IDS=250μA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 5.2 6 mΩ VGS=10V, IDS=20A 2
Diode Forward Voltage VSD 0.84 1.2 V ISD=20A, VGS=0V 2
Drain-Source Voltage VDSS 100 V 2
Gate-Source Voltage VGSS -20 20 V 2
Junction Temperature Range TJ -55 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Source Current-Continuous (Body Diode) IS 95 A Tc=25°C, mounted on large heat sink 2
Pulsed Drain Current IDM 350 A Tc=25°C 2
Continuous Drain Current ID 95 A Tc=25°C 2
Continuous Drain Current ID 67.2 A Tc=100°C 2
Maximum Power Dissipation PD 107.1 W Tc=25°C 2
Maximum Power Dissipation PD 53.6 W Tc=100°C 2
Single Pulsed-Avalanche Energy EAS 416 mJ L=0.3mH 2
Thermal Resistance, Junction-to-Case RθJC 1.4 °C/W 2
Thermal Resistance, Junction-to-Ambient RθJA 110 °C/W Surface mounted on 1in2 FR-4 board 2

CAD (KiCad official)

  • Symbol: HYG053N10NS1D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hyg053n10ns1d-etched.step / hyg053n10ns1d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg053n10ns1d.step / hyg053n10ns1d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (11 pp, sha256 97de95284a65d800, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF