Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

main

Generated by kicad-footprint-generator · KiCad file format 20260206

Name	Last commit message	Last updated
docs	Publish 0.1.0 · Ray	17d ago
viewers	hyg053n10ns1d: viewers · Ray	17d ago
hyg053n10ns1d-etched.glb	Publish 0.1.0 · Ray	17d ago
hyg053n10ns1d-etched.step	hyg053n10ns1d: factory component page (tier=lcsc) · Ray	17d ago
hyg053n10ns1d-hero.glb	hyg053n10ns1d: hero GLB from the etched model (keeps the MPN mark) · Ray	17d ago
hyg053n10ns1d-hero.overlay.json	Publish 0.1.0 · Ray	17d ago
hyg053n10ns1d.glb	Publish 0.1.0 · Ray	17d ago
hyg053n10ns1d.kicad_mod	Publish 0.1.0 · Ray	17d ago
hyg053n10ns1d.kicad_sym	Publish 0.1.0 · Ray	17d ago
hyg053n10ns1d.lbr	Publish 0.1.0 · Ray	17d ago
hyg053n10ns1d.step	Publish 0.1.0 · Ray	17d ago
package.json	Publish 0.1.0 · Ray	17d ago
page.json	Set visibility: public · Ray	17d ago
README.md	Publish 0.1.0 · Ray	17d ago

HYG053N10NS1D

HUAYI · MOSFETs · TO-252-2L

HYG053N10NS1D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; gate-source voltage is rated at ±20 V absolute maximum, with a typical threshold of 3 V (2.2 V min to 3.8 V max at 250 µA).
2	D	passive	Drain, shown as the middle terminal (G D S) in the TO-252-2L drawing; drain-source voltage is rated at 100 V and continuous drain current at 95 A at Tc=25°C.
3	S	passive	Source; continuous body-diode source current is rated at 95 A at Tc=25°C.

Key specifications

Parameter	Value
Manufacturer	HUAYI
Package	TO-252-2L
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Breakdown Voltage	BVDSS	100			V	VGS=0V, IDS=250μA	2
Drain-to-Source Leakage Current	IDSS			1	μA	VDS=100V, VGS=0V	2
Drain-to-Source Leakage Current	IDSS			50	μA	TJ=125°C	2
Gate Threshold Voltage	VGS(th)	2.2	3	3.8	V	VDS=VGS, IDS=250μA	2
Gate-Source Leakage Current	IGSS	-100		100	nA	VGS=±20V, VDS=0V	2
Drain-Source On-State Resistance	RDS(ON)		5.2	6	mΩ	VGS=10V, IDS=20A	2
Diode Forward Voltage	VSD		0.84	1.2	V	ISD=20A, VGS=0V	2
Drain-Source Voltage	VDSS			100	V		2
Gate-Source Voltage	VGSS	-20		20	V		2
Junction Temperature Range	TJ	-55		175	°C		2
Storage Temperature Range	TSTG	-55		175	°C		2
Source Current-Continuous (Body Diode)	IS			95	A	Tc=25°C, mounted on large heat sink	2
Pulsed Drain Current	IDM			350	A	Tc=25°C	2
Continuous Drain Current	ID			95	A	Tc=25°C	2
Continuous Drain Current	ID			67.2	A	Tc=100°C	2
Maximum Power Dissipation	PD			107.1	W	Tc=25°C	2
Maximum Power Dissipation	PD			53.6	W	Tc=100°C	2
Single Pulsed-Avalanche Energy	EAS			416	mJ	L=0.3mH	2
Thermal Resistance, Junction-to-Case	RθJC		1.4		°C/W		2
Thermal Resistance, Junction-to-Ambient	RθJA		110		°C/W	Surface mounted on 1in2 FR-4 board	2

CAD (KiCad official)

Symbol: HYG053N10NS1D
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252-2L (KiCad packages3D, STEP)
3D model files: hyg053n10ns1d-etched.step / hyg053n10ns1d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg053n10ns1d.step / hyg053n10ns1d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: HUAYI datasheet (11 pp, sha256 97de95284a65d800, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF