component

HYG025N06LS1D

Public Made by Adom

by adom

HUAYI MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorshyg025n06ls1dfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
hyg025n06ls1d / README.md
History Download
Ray Publish 0.1.0 fb59bb7 23d ago

HYG025N06LS1D

HUAYI · MOSFETs · TO-252-2L

HYG025N06LS1D from HUAYI, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the gate-source voltage is rated at ±20 V (VGSS) with a threshold of 1.0 to 3.0 V at 250 µA.
2 D passive Drain, the middle stub lead and the exposed mounting tab; rated at 60 V drain-source (VDSS) and 160 A continuous at Tc=25°C.
3 S passive Source; body-diode source current is rated at 160 A continuous at Tc=25°C.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V Tc=25°C unless otherwise noted 2
Gate-Source Voltage VGSS -20 20 V 2
Maximum Junction Temperature TJ 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Source Current-Continuous (Body Diode) IS 160 A Tc=25°C; mounted on large heat sink 2
Pulsed Drain Current IDM 620 A Tc=25°C 2
Continuous Drain Current ID 160 A Tc=25°C 2
Continuous Drain Current ID 113 A Tc=100°C 2
Maximum Power Dissipation PD 125 W Tc=25°C 2
Maximum Power Dissipation PD 62.5 W Tc=100°C 2
Single Pulsed-Avalanche Energy EAS 301.8 mJ L=0.3mH 2
Thermal Resistance, Junction-to-Case RJC 1.2 °C/W 2
Thermal Resistance, Junction-to-Ambient RJA 110 °C/W Surface mounted on FR-4 board 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V,IDS=250μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS=60V,VGS=0V 2
Drain-to-Source Leakage Current IDSS 50 μA TJ=100°C 2
Gate Threshold Voltage VGS(th) 1 2.1 3 V VDS=VGS, IDS=250μA 2
Gate-Source Leakage Current IGSS 100 nA VGS=±20V,VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 2.6 3.3 mΩ VGS=10V,IDS=40A 2
Drain-Source On-State Resistance RDS(ON) 3.8 4.7 mΩ VGS=4.5V,IDS=40A 2
Diode Forward Voltage VSD 0.85 1.3 V ISD=40A,VGS=0V 2

CAD (KiCad official)

  • Symbol: HYG025N06LS1D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hyg025n06ls1d-etched.step / hyg025n06ls1d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg025n06ls1d.step / hyg025n06ls1d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (9 pp, sha256 608b55d605783a18, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF